The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:p...The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.展开更多
Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circ...Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circuits.However,their performance is often degraded by conventional metal deposition,which results in a high barrier due to chemical disorder and Fermi-level pinning(FLP).Although,transferring electrodes can address these issues,they are limited in achieving universal transfer of full-class metals due to strong adhesion between pre-deposited metals and substrates.Here,we propose a nanobelt-assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of electrodes.Our contacts obey the Schottky–Mott rule and exhibit a FLP of S=0.99.Both the electron and hole contacts show record-low Schottky barriers of 4.2 and 11.2 meV,respectively.As a demonstration,we construct a doping-free WSe_(2) inverter with these high-performance contacts,which exhibits a static power consumption of only 58 pW.This strategy provides a universal method of electrode preparation for building high-performance post-Moore electronic devices.展开更多
The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on...The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.展开更多
Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- an...Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.展开更多
文摘The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.
基金National Natural Science Foundation ofChina,Grant/Award Numbers:51991340,51991342,52225206,92163205,52188101,62322402,62204012,52250398,51972022,52303362,62304019the National KeyResearch and Development Program of China,Grant/Award Numbers:2022YFA1203800,2022YFA1203803,2018YFA0703503,2023YFF1500400,2023YFF1500401+7 种基金the Overseas ExpertiseIntroduction Projects for DisciplineInnovation,Grant/Award Number:B14003the Frontier Cross ResearchProject of the Department of Chinese Academy of Sciences,Grant/AwardNumber:XK2023JSA001the Beijing NovaProgram,Grant/Award Numbers:20220484145,20230484478the YoungElite Scientists sponsorship program,Grant/Award Number:2022QNRC001the Fundamental Research Funds for the Central Universities,Grant/Award Number:FRF-06500207the Interdisciplinary Research Project forYoung Teachers of USTB,Grant/Award Numbers:FRF-TP-22-004C2,FRF-IDRY-21-008,FRF-TP-22-004A1,FRF-IDRY-22-016the State Key Lab for Advanced Metals and Materials,Grant/Award Number:2023-Z05the Special supportfrom the Postdoctoral Science Foundation,Grant/Award Number:8206400173。
文摘Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circuits.However,their performance is often degraded by conventional metal deposition,which results in a high barrier due to chemical disorder and Fermi-level pinning(FLP).Although,transferring electrodes can address these issues,they are limited in achieving universal transfer of full-class metals due to strong adhesion between pre-deposited metals and substrates.Here,we propose a nanobelt-assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of electrodes.Our contacts obey the Schottky–Mott rule and exhibit a FLP of S=0.99.Both the electron and hole contacts show record-low Schottky barriers of 4.2 and 11.2 meV,respectively.As a demonstration,we construct a doping-free WSe_(2) inverter with these high-performance contacts,which exhibits a static power consumption of only 58 pW.This strategy provides a universal method of electrode preparation for building high-performance post-Moore electronic devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.U1304518 and U1404109)
文摘The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.
基金Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (GrantNo.51308030201)
文摘Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.
