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First-principles study of electronic properties of interfacial atoms in metal-metal contact electrification
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作者 张远月 邵天敏 苏康 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第5期285-289,共5页
The mechanism of contact electrification between metals was studied using the first-principles method, taking the Ag-Fe contact as an example. Charge population, charge density difference, the orbitals and densities o... The mechanism of contact electrification between metals was studied using the first-principles method, taking the Ag-Fe contact as an example. Charge population, charge density difference, the orbitals and densities of states (DOS) were calculated to study the electronic properties of the contacting interfacial atoms. Based on the calculation, the amount of contact charge was obtained. The investigation revealed that the electrons near Fermi levels with higher energies transfer between the outermost orbitals (s orbitals for Ag and d orbitals for Fe). Meanwhile, polarized covalent bonds form between the d electrons in the deep energy states. These two effects together lead to an increase of charge magnitude at the interface. Also, the electrons responsible for electrification can be determined by their energies and orbitals. 展开更多
关键词 contact electrification first-principles calculations charge transfer metal-metal contact
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Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix
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作者 S, Fahad M. Ali +3 位作者 S. Ahmed S. Khan S. Alam S. Akhtar 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第10期65-69,共5页
Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order ... Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 kΩ/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process anneMing on its electrical fabrication. 展开更多
关键词 Effect of metal contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix
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Electronic properties of the SnSe–metal contacts:First-principles study
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作者 戴宪起 王小龙 +1 位作者 李伟 王天兴 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期473-477,共5页
The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on... The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M (M = Ag,Au,Ta) substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane (CIP) structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact. 展开更多
关键词 FIRST-PRINCIPLES monolayer SnSe metal-semiconductor contact current-in-plane structure
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Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method 被引量:2
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作者 孙雷 杜刚 +1 位作者 刘晓彦 韩汝琦 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第11期1364-1368,共5页
Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i... Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface. 展开更多
关键词 Monte Carlo device simulation metal semiconductor contact direct tunneling Schottky effect
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Refractory Metal Nitride Schottky Contact on GaN 被引量:1
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作者 Ohno Yasuo 《半导体技术》 CAS CSCD 北大核心 2008年第S1期75-79,共5页
For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were evaluated.The refractory metal nitride films were formed by reactive sputtering in A... For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were evaluated.The refractory metal nitride films were formed by reactive sputtering in Ar and N2 ambient.Current-voltage characteristics show that ideality factors of 1.09-1.22 and barrier heights of 0.66-0.75 eV was obtained for the three metal nitrides.For the ZrN contact,the ideality factor and barrier height of became 1.06 and 0.77 eV,respectively,after 800 ℃ annealing.AlGaN/GaN heterostructure FET with TiN gate was also investigated.No obvious degradation was found for the TiN-gate device even after thermal treatment at 850 ℃.This shows that Schottky contact utilizing refractory metal nitride on GaN has the potential for thermal stability or high-temperature operating. 展开更多
关键词 REFRACTORY metal NITRIDE GAN SCHOTTKY contact SCHOTTKY DIODE
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Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems
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作者 Sh.G.Askerov L.K.Abdullayeva M.G.Hasanov 《Journal of Semiconductors》 EI CAS CSCD 2020年第10期17-20,共4页
The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:p... The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters. 展开更多
关键词 Schottky diode metal–semiconductor contact current–voltage characteristics interfaces HETEROGENEITY complex systems
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MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference 被引量:2
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作者 Zhe Kang Yongfa Cheng +7 位作者 Zhi Zheng Feng Cheng Ziyu Chen Luying Li Xinyu Tan Lun Xiong Tianyou Zhai Yihua Gao 《Nano-Micro Letters》 SCIE EI CAS CSCD 2019年第2期217-228,共12页
Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large wor... Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures.However,common metal electrode materials have similar and high work functions,making it difficult to form an asymmetric contacts structure with a large work function difference.Herein,Mo2C crystals with low work function(3.8 eV) was obtained by chemical vapor deposition(CVD) method.The large work function difference between Mo2C and Au allowed us to synthesize an efficient Mo2C/MoS2/Au photodetector with asymmetric metal contact structure,which enables light detection without external electric power.We believe that this novel device provides a new direcfor the design of miniature self-powered photodetectors.These results also highlight the great potential of ultrathin Mo2C prepared by CVD in heterojunction device applications. 展开更多
关键词 Mo2C MOS2 Chemical vapor deposition ASYMMETRIC metal contactS PHOTODETECTOR
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Flow Electrification of Insulated Liquid in Metal Pipes 被引量:2
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作者 ZHU Shouxin LIU Lin TAKAHASHI Satoshi 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2012年第6期1115-1120,共6页
When relative motion occurs between a liquid and a solid, the two phases carry electric charge with opposite signs. The created charge easily accumulates in the liquid, and the amount of the charge carried in an insul... When relative motion occurs between a liquid and a solid, the two phases carry electric charge with opposite signs. The created charge easily accumulates in the liquid, and the amount of the charge carried in an insulated liquid refers to many factors, such as contact area with the solid surface, the contact time, and so forth. However, current theories agree that the amount of charge created during flow electrification is proportional to the contact surface. In this paper, the classical wall current theory is applied to establish an interfacial electrical double-layer model of flow electrification phenomena when an insulated liquid passes over metal pipe surface. Meanwhile, in conjunction with charge relaxation function, the relation between the charge density and flow velocity, the contact time and the contact area is obtained during the liquid flowing process. The experimental result demonstrates that the flowing charge carried in the insulated liquid is not simply proportional to the contact area, but has a non-linear dependence on the contact area and the contact time. Moreover, down flow experimental equipment pipes of different length and diameter, and dielectric hydraulic oil VG46 are used in an experimental study of laminar flow, in order to understand electrification phenomena in dielectric liquid flowing over metal pipes of different length and aperture. If they both increase linearly, charge relaxation will increase exponentially. As a result, the test result verifies related theoretical analysis, and the method given provides a theoretical basis to analyze interracial electrical phenomena. 展开更多
关键词 flow electrification metal pipes contact time RELAXATION
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Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor
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作者 张现军 杨银堂 +3 位作者 段宝兴 柴常春 宋坤 陈斌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期455-459,共5页
Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- an... Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two- dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET). 展开更多
关键词 silicon carbide metal-semiconductor contact dual material gate
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Heat transfer of liquid metal alloy on copper plate deposited with film of different surface free energy
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作者 Huilong Yan Jinliang Yan Gang Zhao 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第11期217-221,共5页
Liquid metal alloys(LMAs) are the potential candidates of thermal interface materials(TIMs) for electronics cooling.In the present work, buffer layers of Ag, Ti, Cu, Ni, Mo, and W were deposited on polished Cu plates ... Liquid metal alloys(LMAs) are the potential candidates of thermal interface materials(TIMs) for electronics cooling.In the present work, buffer layers of Ag, Ti, Cu, Ni, Mo, and W were deposited on polished Cu plates by DC magnetron sputtering, the contact angles of de-ionized water and diiodomethane on the buffer layers were measured by an easy drop shape analyzer and the surface free energies(SFEs) of the buffer layers were calculated by the Owens–Wendt–Kaelble equation. Samples were prepared by sandwiching the filmed Cu plates and LMAs. The thermal properties of the samples were measured by laser flash analysis method. The SFE of the buffer layer has a strong influence on the interface heat transfer, whereas the measurement temperature has no obvious effect on the thermal properties of the samples. As the SFE of the buffer layer increases, the wettability, thermal diffusivity, and thermal conductivity are enhanced, and the thermal contact resistance is decreased. 展开更多
关键词 BUFFER layer LIQUID metal alloy thermal contact resistance heat TRANSFER surface free energy
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MESHFREE METHOD BASED ON POINT COLLOCATION FOR METAL FORMING SIMULATION
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作者 H.Y. Wen X.H. Dong X.Y. Ruan 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2006年第2期79-84,共6页
A meshfree method based on reproducing kernel approximation and point collocation is presented for analysis of metal ring compression. The point collocation method is a true meshfree method without the employment of a... A meshfree method based on reproducing kernel approximation and point collocation is presented for analysis of metal ring compression. The point collocation method is a true meshfree method without the employment of a background mesh. It is shown that, in a point collocation approach, the remesh problem because of the mesh distortion in FEM (finite element method) and the low efficiency in Galerkin-based meshfree method are avoided. The corrected kernel functions are introduced to the stabilization of free-surface boundary conditions. The solution of symmetric ring compression problem is compared with a conventional finite element solution, and reasonable results have been obtained. 展开更多
关键词 meshfree method RKPM (reproducing kernel particle method) point collocation metal forming frictional contact
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壳聚糖/纤维素复合纳滤膜除锰性能研究
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作者 胡孝勇 黄双 +3 位作者 邓冬梅 黄挺 宋文彦 左华江 《化工新型材料》 CAS CSCD 北大核心 2024年第11期164-170,176,共8页
将壳聚糖(CS)与纤维素(CEL)共混,以1-乙基-3甲基咪唑醋酸盐(EMIMAc)为溶剂,二甲基亚砜(DMSO)为助溶剂,通过浸没沉淀相转换法制备了CS/CEL复合纳滤膜,用于去除水中的Mn^(2+)。采用X射线光电子能谱仪、场发射扫描电子显微镜、傅里叶变换... 将壳聚糖(CS)与纤维素(CEL)共混,以1-乙基-3甲基咪唑醋酸盐(EMIMAc)为溶剂,二甲基亚砜(DMSO)为助溶剂,通过浸没沉淀相转换法制备了CS/CEL复合纳滤膜,用于去除水中的Mn^(2+)。采用X射线光电子能谱仪、场发射扫描电子显微镜、傅里叶变换红外光谱仪、热重分析仪对材料元素价态、微观形貌及热稳定性进行分析和表征,探究了聚合物总含量、CS和DMSO含量对复合纳滤膜纯水通量的影响,以及实验条件对复合纳滤膜去除Mn^(2+)效果的影响。结果表明:在m(DMSO)∶m(EMIMAc)=1∶1、m(CS)∶m(CEL)=1∶1条件下,当聚合物质量分数为8%、CS质量分数为50%、DMSO质量分数为50%时,最佳纯水通量为80L/(m^(2)·h)。上述条件下,当DMSO质量分数调整为40%时,复合纳滤膜对Mn^(2+)的截留效果最佳,Mn^(2+)去除率达71.2%。利用复合纳滤膜吸附去除Mn^(2+)时,最佳吸附条件为膜质量0.4g、Mn^(2+)初始质量浓度20mg/L、振荡频率80r/min、吸附温度30℃、吸附时间60min。 展开更多
关键词 壳聚糖 纤维素 复合纳滤膜 重金属 接触角
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Tin-based metal bath heat treatment: an efficient and recyclable green approach for Pinus massoniana wood modification 被引量:1
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作者 Kufre Edet Okon Fengcai Lin +1 位作者 Yandan Chen Biao Huang 《Journal of Forestry Research》 SCIE CAS CSCD 2018年第6期1807-1814,共8页
Pinus massoniana L. was thermally treated with low melting point alloy as heating medium to investigate the strength properties changes. Contact angle, color and scanning electron microscopy were recorded to assess th... Pinus massoniana L. was thermally treated with low melting point alloy as heating medium to investigate the strength properties changes. Contact angle, color and scanning electron microscopy were recorded to assess the effectiveness of the treatment. Samples were pre-treated in a micro-wave for 5 min followed by metal bath heat treatment at 150, 180, and 210 °C for 2, 4, and 8 h,respectively. Strength properties of metal bath treated wood were decreased with increase temperature and time.Density, modulus of rupture, impact bending, modulus of elasticity were reduced for all treatments. Maximum compressive strength slightly increased at 150 °C for 4 h followed by gradual reduction. The Janka hardness was reduced in the tangential and radial directions. Treatment of the wood at 210 °C for 8 h caused the wood to become brittle and rupture. The contact angle was considerably higher after thermal treatment. The color of the wood became darker with increasing temperature of thermal treatment. Micrographs of the heat-treated samples showed damage to the cell wall with increase in temperature. Metal bath heat treatment of wood was carried out successfully and some strength properties were reduced. 展开更多
关键词 metal bath heat treatment Strength properties Pinus massoniana COLOR contact angle
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Metal Nanoparticle Modified Polysulfone Membranes for Use in Wastewater Treatment: A Critical Review
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作者 Heidi Lynn Richards Priscilla G. L. Baker Emmanuel Iwuoha 《Journal of Surface Engineered Materials and Advanced Technology》 2012年第3期183-193,共11页
Membrane separation processes have been widely applied in the treatment of wastewater. Polysulphone (PSF) membranes are the most common membranes used in ultrafiltration of wastewater due to its mechanical robustness ... Membrane separation processes have been widely applied in the treatment of wastewater. Polysulphone (PSF) membranes are the most common membranes used in ultrafiltration of wastewater due to its mechanical robustness and structural and chemical stability. Unfortunately these membranes are mostly hydrophobic by nature and therefore highly susceptible to fouling. Many studies have been conducted to increase the hydrophilic properties of the polysul-phone/ polyethersulfone membrane surface, more recently metal nanoparticles have been added to the polymer matrix in order to reduce fouling potential and increase membrane performance. TiO2 nanoparticles have proven successful in mitigating fouling of organic matter onto PES. Embedded Ag nanoparticles have improved virus removal from wastewater due to the bactericidal properties of silver. Al2O3 and most recently ZrO2 nanoparticles reduced the fouling rate of polyethersulfone membranes in wastewater, while the latter also showed lower flux decline of the composite membrane. These metal nanoparticles all impart specific properties onto the membrane surface. Scanning electron microscopy, steady state fouling rate and contact angle measurements are membrane characterisation techniques discussed in this review that reveal specific changes to membrane properties brought about by metal nanoparticles. This paper reviews the most recent developments and shortcomings of metal nanocomposite polysulfone and polyethersulfone (PES) membranes and strives to identify specific focus areas to consider in future research. 展开更多
关键词 POLYSULFONE (PSF) POLYETHERSULFONE (PES) metal Nanoparticles Scanning Electron Microscopy contact Angle Nanocomposite HYDROPHOBICITY
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Study on Contact Algorithm of Dynamic Explicit FEM for Sheet Forming Simulation
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作者 Zhang Hai-ming Dong Xiang-huai Li Zhi-gang 《Wuhan University Journal of Natural Sciences》 EI CAS 2001年第3期704-708,共5页
Based on existing algorithms, a newly developed contact search algorithm is proposed. The new algorithm consists of global search, local searching, local tracking and penetration calculation processes. It requires no ... Based on existing algorithms, a newly developed contact search algorithm is proposed. The new algorithm consists of global search, local searching, local tracking and penetration calculation processes. It requires no iteration steps. It can deal with not only general tool surfaces with vertical walls, but also tool surfaces meshed with elements having very poor aspect ratios. It is demonstrated that the FE code employing this new contact search algorithm becomes more reliable, efficient and accurate for sheet metal forming simulation than conventional ones. 展开更多
关键词 contact algorithm dynamic explicit FEM sheet metal forming
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The Effects of Nanodiamonds at the Action of Colored Metal Ions on the Skin of Guinea Pigs
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作者 Ekaterina Yu. Vasilyeva Victor I. Prokhorenkov +1 位作者 Alexey P. Puzyr Vladimir S. Bondar 《Journal of Biomaterials and Nanobiotechnology》 2016年第4期214-224,共12页
The protective effect of modified nanodiamonds (MND) under the action of cobalt and nickel ions on the skin of Guinea pigs was shown. At the action of chromium ions on the skin of animals, the protective effect of MND... The protective effect of modified nanodiamonds (MND) under the action of cobalt and nickel ions on the skin of Guinea pigs was shown. At the action of chromium ions on the skin of animals, the protective effect of MND was not found. The differences are related to different adsorption properties of MND to the investigated colored metal ions. It is shown in vitro that MND can adsorb ions of cobalt and nickel and don’t bind ions of chromium from aqueous medium. The perspectives using of MND as a new drug for the prevention allergic dermatitis caused by action of bivalent ions of metals are discussed. 展开更多
关键词 NANODIAMONDS Allergic contact Dermatitis Colored metal Ions Clinical-Morphological Study
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具有圆度误差的径向金属密封接触应力研究
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作者 杨仪伟 何光杰 +2 位作者 何东升 庄雯劼 郑严 《润滑与密封》 CAS CSCD 北大核心 2024年第5期102-111,共10页
由于加工圆度误差的影响,井下流量控制阀径向金属密封接触应力分布不均匀,从而影响密封性能。利用有限元方法研究具有圆度误差的径向金属密封唇部接触应力分布,并分析圆度误差对径向金属密封接触应力的影响;基于有限元分析结果提出径向... 由于加工圆度误差的影响,井下流量控制阀径向金属密封接触应力分布不均匀,从而影响密封性能。利用有限元方法研究具有圆度误差的径向金属密封唇部接触应力分布,并分析圆度误差对径向金属密封接触应力的影响;基于有限元分析结果提出径向金属密封接触应力分布的理论解析式,并进行误差分析。具有圆度误差的径向金属密封唇部接触应力分布的理论解与数值解相符,各参数引起的最大接触应力的平均相对误差约为10%。根据具有圆度误差的径向金属密封副接触应力的分布规律,提出合理的过盈量函数,修正了径向金属密封轴对称结构的悬臂梁模型的接触应力理论关系式,得出了圆度误差下的径向金属密封接触应力分布规律。研究结果为井下流量控制阀径向金属密封的设计提供了理论指导。 展开更多
关键词 径向金属密封 金属密封圈 圆度误差 接触应力 流量控制阀
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Evaluation of Contact Pressure in Bending under Tension Test by a Pressure Sensitive Film
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作者 Luis Fernando Folle Lirio Schaeffer 《Journal of Surface Engineered Materials and Advanced Technology》 2016年第4期201-214,共15页
The contact pressure acting on the sheet/tools interface has been studied because of growing the concern about the wear of tools. Recent studies make use of numerical simulation software to evaluate and correlate this... The contact pressure acting on the sheet/tools interface has been studied because of growing the concern about the wear of tools. Recent studies make use of numerical simulation software to evaluate and correlate this pressure with the friction and wear generated. Since there are many studies that determine the coefficient of friction in sheet metal forming by bending under tension (BUT) test, the contact pressure between the pin and the sheet was measured using a film that has the ability to record the applied pressure. The vertical force applied to pin was also measured. The results indicate that the vertical force is more accurate to set the contact pressure that using equations predetermined. It was also observed that the contact area between the sheet and the pin is always smaller than the area calculated geometrically. The friction coefficient was determined for the BUT test through several equations proposed by various authors in order to check if there is much variation between the results. It was observed that the friction coefficient showed little variation for each equation, and each one can be used. The material used was the commercially pure aluminum, alloy Al1100. 展开更多
关键词 Coefficient of Friction Sheet metal Forming Process Bending under Tension Test contact Pressure Technology Applied to Design
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希夏邦马峰地区矽卡岩型稀有金属矿化:岩石学特征、成矿时代及其地质意义 被引量:2
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作者 侯康师 王佳敏 +1 位作者 胡方泱 杨雷 《岩石学报》 SCIE EI CAS CSCD 北大核心 2024年第5期1527-1547,共21页
近年来,喜马拉雅稀有金属找矿工作和成矿研究不断取得突破,喜马拉雅已成为我国新的战略性矿产资源基地。本次研究对希夏邦马峰地区的吉隆岩体北部扎龙沟、岗布以及聂拉木北部等多处的矽卡岩进行了岩相学、矿物学和年代学研究,指出该区... 近年来,喜马拉雅稀有金属找矿工作和成矿研究不断取得突破,喜马拉雅已成为我国新的战略性矿产资源基地。本次研究对希夏邦马峰地区的吉隆岩体北部扎龙沟、岗布以及聂拉木北部等多处的矽卡岩进行了岩相学、矿物学和年代学研究,指出该区域广泛发育石榴子石、透辉石、符山石、绿帘石和角闪石等典型矽卡岩矿物。研究结果显示,扎龙沟矽卡岩具有明显的Li-Be-Sn矿化现象,成矿元素主要赋存在符山石(Li:469×10^(-6)~3162×10^(-6);Be:47.9×10^(-6)~2010×10^(-6);Sn:58.1×10^(-6)~1767×10^(-6))和云母(Li:2900×10^(-6)~3570×10^(-6))中,且云母中Rb(1572×10^(-6)~2364×10^(-6))、Cs(390×10^(-6)~749×10^(-6))、Ga(68.2×10^(-6)~111×10^(-6))元素含量较高;岗布矽卡岩以Li-Be矿化为主,赋存矿物为符山石(Li:833×10^(-6)~1624×10^(-6);Be:401×10^(-6)~1664×10^(-6);Sn:87.8×10^(-6)~181×10^(-6))和榍石(Sn:30340×10^(-6)~48600×10^(-6));聂拉木矽卡岩以Sn矿化为主,赋存矿物为石榴子石(92.3×10^(-6)~571×10^(-6))和绿帘石(86.0×10^(-6)~2003×10^(-6))。榍石U-Pb定年结果显示,扎龙沟矽卡岩形成于19~18Ma,岗布和聂拉木矽卡岩形成于24~23Ma,分别与已报道的钠长石花岗岩、电气石白云母淡色花岗岩时代一致,是岩浆出溶的热液流体交代围岩的产物,反映喜马拉雅稀有金属阶段性成矿特点。榍石Zr和黑云母Ti等温度计结果结合矿物成分表明,矽卡岩化过程中,热液流体温度从~680℃降低至~520℃,晚期均以氧化环境为主。进变质过程中脱CO 2导致原岩孔隙度增加,为后续成矿流体的加入和热量传输提供通道;退化蚀变过程中体积增大,岩石产生构造裂隙,控制成矿矽卡岩最终产出形态。综合研究表明,淡色花岗岩在藏南拆离系驱动下高度分异演化造成Li、Be、Sn等元素富集,晚期出溶的热液流体与碳酸盐岩围岩发生接触交代变质和矽卡岩化反应,是吉隆-聂拉木一带矽卡岩型Li-Be-Sn矿化的主要机制。我们指出,喜马拉雅造山带具有很好的矽卡岩型稀有金属成矿前景,未来应加强对接触变质带和围岩蚀变的研究,以寻找更多稀有金属矿床。 展开更多
关键词 喜马拉雅 矽卡岩 稀有金属成矿 接触交代变质 热液流体
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特殊螺纹油管密封面相控阵超声图像特征分析
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作者 田春萌 樊建春 +2 位作者 胡瑾秋 杨帅 魏凯哲 《石油机械》 北大核心 2024年第6期123-129,共7页
特殊螺纹油管密封面的接触状况对密封性能有重要影响。超声反射幅值应力技术仅依靠反射系数单一参数,难以全面评估密封面不同接触状况。为此,通过采集不同扭矩及无螺纹脂情况下油管密封面相控阵超声图像,提取图像的纹理特征,分析纹理特... 特殊螺纹油管密封面的接触状况对密封性能有重要影响。超声反射幅值应力技术仅依靠反射系数单一参数,难以全面评估密封面不同接触状况。为此,通过采集不同扭矩及无螺纹脂情况下油管密封面相控阵超声图像,提取图像的纹理特征,分析纹理特征参数与不同接触状况下的定性及定量关系。研究结果表明:随着油管扭矩的增大,超声图像灰度均值、灰度方差及偏度均减小;油管密封面超声图像灰度共生矩阵对比度,随着油管扭矩的增大,在45°、90°及135°方向上呈线性减小;在0°方向上不含螺纹脂的超声图像是同扭矩下含螺纹脂对比度的2.19倍;油管密封面超声图像灰度共生矩阵熵值,随着油管扭矩的增加,在0°、45°、90°及135°方向上呈线性减小。研究结果可为油管密封面不同接触状况下超声检测图像定性及定量表征提供数据支撑。 展开更多
关键词 特殊螺纹连接 金属接触 相控阵超声检测 纹理分析 特征参数 螺纹脂
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