Based on an advanced technology, randomly-aligned subwavelength structures（SWSs） were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride...Based on an advanced technology, randomly-aligned subwavelength structures（SWSs） were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride（mainly ferrous-fluoride） nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride（mainly ferrous fluoride） is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1：5.展开更多
在4H-SiC MESFET微波功率器件制造技术中干法刻蚀是一个很重要的工艺,而对SiC外延片的RIE、ICP等干法刻蚀来说,有光刻胶、Ni、Al和NiSi化合物等多种掩膜方法,其中用光刻胶做掩膜时刻蚀形成的台阶角度缓,不垂直,而Ni、Al等金属掩膜在干...在4H-SiC MESFET微波功率器件制造技术中干法刻蚀是一个很重要的工艺,而对SiC外延片的RIE、ICP等干法刻蚀来说,有光刻胶、Ni、Al和NiSi化合物等多种掩膜方法,其中用光刻胶做掩膜时刻蚀形成的台阶角度缓,不垂直,而Ni、Al等金属掩膜在干法刻蚀后易形成接近垂直的台阶。通过对Ni、Al、NiSi化合物等多种金属掩膜的研究,得到了干法刻蚀台阶垂直且表面状况良好的Ni金属掩膜条件,最终成功制备出9mm SiC MESFET微波功率器件,在2GHz脉冲输出功率超过38W,功率增益9dB。展开更多
基金Funded by the National Natural Science Foundation of China(Nos.61705204 and 51606158)the Laser Fusion Research Center Funds for Young Talents(No.LFRC-PD011)
文摘Based on an advanced technology, randomly-aligned subwavelength structures（SWSs） were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride（mainly ferrous-fluoride） nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride（mainly ferrous fluoride） is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1：5.
文摘在4H-SiC MESFET微波功率器件制造技术中干法刻蚀是一个很重要的工艺,而对SiC外延片的RIE、ICP等干法刻蚀来说,有光刻胶、Ni、Al和NiSi化合物等多种掩膜方法,其中用光刻胶做掩膜时刻蚀形成的台阶角度缓,不垂直,而Ni、Al等金属掩膜在干法刻蚀后易形成接近垂直的台阶。通过对Ni、Al、NiSi化合物等多种金属掩膜的研究,得到了干法刻蚀台阶垂直且表面状况良好的Ni金属掩膜条件,最终成功制备出9mm SiC MESFET微波功率器件,在2GHz脉冲输出功率超过38W,功率增益9dB。
