As a second part under the title, this paper introduces the applications of sillimanite group minerals (SGM) in refractory products for hot blast stove, blast furnace, torpedo, hot metal mixer, etc., with emphases on ...As a second part under the title, this paper introduces the applications of sillimanite group minerals (SGM) in refractory products for hot blast stove, blast furnace, torpedo, hot metal mixer, etc., with emphases on their uses in the low creep and thermal shock resistant bricks for tuyere and iron notch of blast furnace and checker brick and ceramic burner of hot blast stove, taking use of their phase transformation to form primary mullite and secondary mullite, accompanied by volume expansion. The developed SGM containing refractories have found wide uses in major domestic iron and steel making plants to meet the requirements of longer service life, higher service temperature and intensified operations.展开更多
基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本...基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz^1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。展开更多
文摘As a second part under the title, this paper introduces the applications of sillimanite group minerals (SGM) in refractory products for hot blast stove, blast furnace, torpedo, hot metal mixer, etc., with emphases on their uses in the low creep and thermal shock resistant bricks for tuyere and iron notch of blast furnace and checker brick and ceramic burner of hot blast stove, taking use of their phase transformation to form primary mullite and secondary mullite, accompanied by volume expansion. The developed SGM containing refractories have found wide uses in major domestic iron and steel making plants to meet the requirements of longer service life, higher service temperature and intensified operations.
文摘基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz^1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。
