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Spin and valley half metal induced by staggered potential and magnetization in silicene 被引量:2
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作者 汪萨克 田宏玉 +1 位作者 杨永宏 汪军 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第1期379-383,共5页
We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is sho... We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices. 展开更多
关键词 SILICENE spin–orbit interaction spin and valley half metal spin and valley blocking effect
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