Valley polarization in transition metal dichalcogenide layered semiconductors:Generation,relaxation,manipulation and transport

In recent years,valleytronics researches based on 2D semiconducting transition metal dichalcogenides have attracted considerable attention.On the one hand,strong spin–orbit interaction allows the presence of spin–valley coupling in this system,which provides spin addressable valley degrees of freedom for information storage and processing.On the other hand,large exciton binding energy up to hundreds of me V enables excitons to be stable carriers of valley information.Valley polarization,marked by an imbalanced exciton population in two inequivalent valleys(+K and-K),is the core of valleytronics as it can be utilized to store binary information.Motivated by the potential applications,we present a thorough overview of the recent advancements in the generation,relaxation,manipulation,and transport of the valley polarization in nonmagnetic transition metal dichalcogenide layered semiconductors.We also discuss the development of valleytronic devices and future challenges in this field.

Protonated and layered transition metal oxides as solid acids for dehydration of biomass-based fructose into 5-hydroxymethylfurfural

A serial of protonated and layered transition metal oxides, including layered HTaWO6, HNbMoO6 as well as HNbWO6, were synthesized by solid-state reaction and ion-exchange. The layered HTaWO6 has been systematically studied as a solid acid to realize the dehydration of fructose to 5-hydroxymethylfurfural (HMF). The transition metal oxide samples were characterized with ICP-OES, EDS, XRD, XPS, SEM, TGA, FT-IR, N-2 adsorption-desorption and NH3-TPD. The influential factors such as reaction temperature, reaction time, solvent, catalyst amount and substrate concentration were deeply investigated. The optimized fructose conversion rate of 99% with HMF yield of 67% were achieved after 30 min at 140 degrees C in dimethylsulfoxide. (C) 2016 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.

Thickness-dependent structural stability and transition in molybdenum disulfide under hydrostatic pressure

Understanding the physical mechanism of structural stability and transition in various polytypes of layered transition metal dichalcogenides under the external stimulus is of crucial importance for their new applications.Here,we investigate the thickness-dependent structural properties of MoS2 under the condition of hydrostatic pressure in terms of bond relaxation and thermodynamics considerations.For both types of MoS2 structures,we find that the transition and metallization are significantly modulated by hydrostatic pressure and the number of layers.We establish a pressure-size phase diagram to address the transition mechanism.Our study not only provides insights into the thickness-dependent structural properties of MoS2,but also shows a theoretical guidance for the design and fabrication of MoS2-based devices.

Understanding voltage hysteresis and decay during anionic redox reaction in layered transition metal oxide cathodes:A critical review

The emergence of anionic redox reactions in layered transition metal oxide cathodes provides practical opportunity to boost the energy density of rechargeable batteries.However,the activation of anionic redox reaction in layered oxides has significant voltage hysteresis and decay that reduce battery performance and limit commercialization.Here,we critically review the up-todate development of anionic redox reaction in layered oxide cathodes,summarize the proposed reaction mechanism,and unveil their connection to voltage hysteresis and decay based on the state-of-the-art progress.In addition,advances associated with various modification approaches to mitigate the voltage hysteresis/decay in layered transition metal oxide cathodes are also included.Finally,we conclude with an appraisal of further research directions including rational design of high-performance layered oxide cathodes with reversible anionic redox reactions and suppressed voltage hysteresis/decay.Findings will be of immediate benefit to the development of layered oxide cathodes for high performance rechargeable batteries.

Progress on multiphase layered transition metal oxide cathodes of sodium ion batteries

As one of the most promising secondary batteries in large-scale energy storage,sodium ion batteries(SIBs) have attracted wide attention due to the abundant raw materials and low cost.Layered transition metal oxides are one kind of popular cathode material candidates because of its easy synthesis and large theoretical specific capacity.Yet,the most common P2 and O3 phases show distinct structural characteristics respectively.O3 phase can serve as a sodium reservoir,but it usually suffers from serious phase transition and sluggish kinetics.For the P2 phase,it allows the fast sodium ion migration in the bulk and the structure can maintain stable,but it is lack of sodium,showing a great negative effect on Coulombic efficiency in full cell.Thus,single phase structure almost cannot achieve satisfied comprehensive sodium storage performances.Under these circumstances,exploiting novel multiphase cathodes showing synergetic effect may give solution to these problems.In this review,we summarize the recent development of multiphase layered transition metal oxide cathodes of SIBs,analyze the mechanism and prospect the future potential research directions.

Preparation of layered oxide Li(Co_(1/3)Ni_(1/3)Mn_(1/3))O_2 via the sol-gel process

To obtain homogenous layered oxide Li（Co1/3Ni1/3Mn1/3）O2 as a lithium insertion positive electrode material, the sol-gel process using citric acid as a chelating agent was applied. The material Li（Co1/3Ni1/3Mn1/3）O2 was synthesized at different calcination temperatures. XRD experiment indicated that the layered Li（Co1/3Ni1/3Mn1/3）O2 material could be synthesized at a lower temperature of 800℃, and the oxidation state of Co, Ni, and Mn in the cathode confirmed by XPS were ＋3, ＋2, and ＋4, respectively. SEM observations showed that the synthesized material could form homogenous particle morphology with the particle size of about 200 nm. In spite of different calcination temperatures, the charge-discharge curves of all the samples for the initial cycle were similar, and the cathode synthesized at 900℃ showed a small irreversible capacity loss of 11.24% and a high discharge capacity of 212.2 mAh·g^-1 in the voltage range of 2.9-4.6 V.

Insights into Ti doping for stabilizing the Na_(2/3)Fe_(1/3)Mn_(2/3)O_(2)cathode in sodium ion battery

Iron-and manganese-based layered metal oxides,as cathodes for sodium ion batteries,have received widespread attention because of the low cost and high specific capacity.However,the Jahn-teller effect of Mn^(3+)ions and the resulted unstable structure usually lead to continuously capacity decay.Herein,Titanium(Ti)has been successfully doped into Na_(2/3)Fe_(2/3)Mn_(2/3)O_(2)to suppress the Jahn-Teller distortion and improve both cycling and rate performance of sodium ion batteries.In situ high-energy synchrotron X-ray diffraction study shows that Ti-doped compound(Na_(2/3)Fe_(1/3)Mn_(0.57)Ti_(0.1)O_(2))can maintain the single P2 phase without any phase transition during the whole charging/discharging process.Various electrochemical characterizations are also applied to explore the better kinetics of sodium ions transfer in the Na_(2/3)Fe_(1/3)Mn_(0.5)7 Ti_(0.1)O_(2).This work provides a comprehensive insight into the Ti-doping effects on the performance from both structural and electro kinetic perspectives.

Empowering higher energy sodium-ion battery cathode by oxygen chemistry

Sodium(Na)ion batteries(SIBs)promise low-cost energy storage systems but are still restricted by insufficient energy density.Introducing oxygen(O)redox into the design of the Na-storage cathode is presently considered an effective avenue to generate extra capacity in solving the energy density bottleneck.The succeeding issues are how to overcome the irreversible electrochemical behavior accompanied by O release.Meanwhile,the O redox chemistry and subsequent structural evolution remain ambiguous so far.Here,we deliberate on the O redox mechanism in Na-storage transition metal oxides.Challenges associated with the reaction irreversibility and structural collapse are summarized by virtue of the advanced characterization techniques.Beyond that,strategies that potentially enhance the electrochemical properties of O redox and future research perspectives on exploring useable O redox cathode materials are outlined.

Versatile band structure and electron-phonon coupling in layered PtSe_(2) with strong interlayer interaction

The large tunability in the band structure is ubiquitous in two-dimensional(2D)materials,and PtSe_(2) is not an exception,which has attracted considerable attention in electronic and optoelectronic applications due to its high carrier mobility and long-term airstability.Such dimensional dependent properties are closely related to the evolution of electronic band structures.Critical points(CPs),the extrema or saddle points of electronic bands,are the cornerstone of condensed-matter physics and fundamentally determine the optical and transport phenomena of the layered PtSe_(2).Here,we have experimentally revealed the detailed electronic structures in layered PtSe_(2),including the CPs in the Brillouin zones(BZs),by means of reflection contrast spectroscopy and spectroscopic ellipsometry(SE).There are three critical points in the BZs attributed to the excitonic transition,quasi-particle band gap,and the band nesting effect related transition,respectively.Three CPs show red-shifting trends with increasing layer number under the mechanism of strong interlayer coupling.We have further revealed the electron–phonon(e–ph)interaction in such layered material,utilizing temperature-dependent absorbance spectroscopy.The strength of e–ph interaction and the average phonon energy also decline with the increasement of layer number.Our findings give a deep understanding to the physics of the layer-dependent evolution of the electronic structure of PtSe_(2),potentially leading to applications in optoelectronics and electronic devices.

Bandgap opening in MoTe2 thin flakes induced by surface oxidation

Recently,the layered transition metal dichalcogenide 1T′-MoTe2 has generated considerable interest due to their superconducting and non-trivial topological properties.Here,we present a systematic study on 1T′-MoTe2 single-crystal and exfoliated thin-flakes by means of electrical transport,scanning tunnelling microscope(STM)measurements and band structure calculations.For a bulk sample,it exhibits large magneto-resistance(MR)and Shubnikov–de Hass oscillations inρxx and a series of Hall plateaus inρxy at low temperatures.Meanwhile,the MoTe2 thin films were intensively investigated with thickness dependence.For samples,without encapsulation,an apparent transition from the intrinsic metallic to insulating state is observed by reducing thickness.In such thin films,we also observed a suppression of the MR and weak anti-localization(WAL)effects.We attributed these effects to disorders originated from the extrinsic surface chemical reaction,which is consistent with the density functional theory(DFT)calculations and in-situ STM results.In contrast to samples without encapsulated protection,we discovered an interesting superconducting transition for those samples with hexagonal Boron Nitride(h-BN)film protection.Our results indicate that the metallic or superconducting behavior is its intrinsic state,and the insulating behavior is likely caused by surface oxidation in few layer 1T’-MoTe2 flakes.

Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection

Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible–near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of ~1.2 × 1012Jones, and noise current approaching 0.1 pA·Hz–1/2at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Titanium-aluminum-nitride（TiAlN） films were grown by plasma-enhanced atomic layer deposition（PEALD）on 316 L stainless steel at a deposition temperature of 200 °C. A supercycle, consisting of one AlN and ten TiN subcycles, was used to prepare TiAlN films with a chemical composition of Ti（0.25）Al（0.25）N（0.50）. The addition of AlN to TiN resulted in an increased electrical resistivity of TiAlN films of 2800 μΩ cm, compared with 475 μΩ cm of TiN films, mainly due to the high electrical resistivity of AlN and the amorphous structure of TiAlN. However, potentiostatic polarization measurements showed that amorphous TiAlN films exhibited excellent corrosion resistance with a corrosion current density of 0.12 μA/cm^2, about three times higher than that of TiN films, and about 12.5 times higher than that of 316 L stainless steel.