Thermal behaviors and heavy metal vaporization of phosphatized tannery sludge in incineration process

The high concentration of heavy metal (Cu, Cr, Zn, Pb) in tannery sludge causes severe heavy metal emissions in the process of incineration. In the present investigation, the tannery sludge was treated with 85% phosphoric acid before the incineration process in the tube furnace to control the heavy metal emissions. The thermal behavior and heavy metal vaporization of pre-treated tannery sludge were investigated, and X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were also implemented to elucidate the chemical mechanisms responsible for the thermal behavior and weakening of heavy metal vaporization of pre-treated tannery sludge. The results obtained show that the differences in thermal behaviors between untreated and pre-treated tannery sludge are caused by the reaction of phosphoric acid and calcium carbonate. The vaporization percentage of heavy metal decreased efficiently with the increasing volumes of H3PO4, which indicated the important thermal stability of the water-insoluble metallic phosphates (Ca18Cu3(PO4)14, Ca9Cr(PO4)7, Ca19Zn2(PO4)14, PbMgP2O7) formed during tannery sludge phosphatation.

Electrocatalytic Activity of Ni/C Electrodes Prepared by Metal Vapor Synthesis For Hydrogen Evolution in Alkaline Solution

The metal vapor synthesis (MVS) methed was used to prepare activatedcarbon supported nickel electrode. The electrocatalytic activity of the electrode forhydrogen evolution reaction(HGR) in alkaline solution was studied. Cathodicpolarization curves showed the electrocatalytic activity of Ni/C electrode prepared byMVS method was higher than that of the one prepared by conventional method.

Simulation of the Effect of a Metal Vapor Arc on Electrode Erosion in Liquid Metal Current Limiting Device

The effect of arc plasma on electrode erosion in a liquid metal current limiter(LMCL)is studied.Based on a simplified two-dimensional magnetohydrodynamic model,the elongated GaInSn metal vapor arc and its contraction process in a liquid metal current limiter are simulated.The distributions of temperature,pressure and velocity of the arc plasma are calculated.The simulation results indicate that the electrode erosion is mainly caused by two high temperature gas jet flows arising from the pressure gradient,which is a result of the non-uniform arc temperature distribution.The gas flows,which act as jets onto the electrode surface,lead to the evaporation of the electrode material form the surface.A redesign structure of the electrode is proposed and implemented according to the analysis,which greatly increased the service life of the electrode.

Characterization and Magnetic Properties of Cobalt Nano-Particles Prepared by Metal Vapor Synthesis Technique

The metal vapor synthesis technique was employed to prepare Co nanoparticles. The characteristics and properties ofthe particles were studied by transmission electron microscopy, X-ray diffraction, temperature-programmed desorption,chemisorption and magnetic measurements. The experimental results showed that the particle size of Co powdersdepended on the initial Co concentration in the toluene matrix, reaching average crystallite diameter of 1.5 nm for thehighest concentration (6.4 at. pct) investigated. The particles with size of 10 nm exist, due to the agglomerates ofmicrocrystallites. The Co particles were surrounded by a thin carbonaceous layer formed due to toluene decompositionon cocondate melt-down and subsequent warming to room temperature. The carbonaceous layer was composedprimarily of C1 fragments. The Co powders demonstrated ferromagnetic behavior.

Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc Ion Source

AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steel was investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ion source with an extraction voltage of 40 kV, implantation doses of 3×1017/cm2 and 5×1017/cm2, and ion current densities of 13, 22 and 32 μA/cm2. The results showed that the near-surface hardness of Co-implanted stainless steel sample was increased by 50% or more, and it increased with increasing ion current density at first and then declined. The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantation reduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasing ion current density and then an increase was observed. Within the range of experimental parameters, there exists a critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasing retained dose, going through a minimum and then increased. The critical ion current density in this paper is about 22 μA/cm2.

Magnetic Properties of Nd-Fe-B Sintered Magnet Powders Recovered by Yb Metal Vapor Sorption

Fine ground powders of Nd-Fe-B sintered magnet bulks (particle size=46～125 μm in diameter) were coated and alloyed with Yb metal by sorbing them. A significant recovery of the decreased magnetic properties of the ground powders (remanence B r=～0.95 T, coercivity H cj =～227 kA·m -1 and maximum energy product (BH) max=～48 8 kJ·m -3) was observed in accordance with increasing temperature up to 800 ℃. The sorbing temperature and time for Yb metal vapor were optimized and after heating at 800 ℃ for 90 min and annealing subsequently at 610 ℃ for 60 min, the B r, H cj and (BH) max values were increased to be 0.98 T, 712 kA·m -1 and 173 kJ·m -3, respectively. From the microstructural characterizations of resulting samples by using X-ray diffraction (XRD), scanning electron microscopy (SEM), and electron probe X-ray microanalyzer (EPMA), it is found that the sorbed Yb metal uniformly covers the surface and diffuses to the Nd-rich grain boundary of fine ground powders of Nd-Fe-B sintered magnet bulks forming a (Nd,Yb)Fe 2 phase.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses(tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors(HEMTs) on silicon(111) substrates grown by metal organic chemical vapor deposition(MOCVD) with a novel partially Magnesium(Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.

Preparation of Metal Particle Catalysts Wrapped in Organosilicon Compound via Metal Vapor Synthesis

Three kinds of metal catalysts Ni/D4, Ni-Mn/D4, Ni-Mn-La/D4, wrapped in organosilicon compound were prepared by metal vapor synthesis. Their feature was characterized with XRD, TEM, XPS, FMR and static magnetic measurement. The metal particle size in catalysts was less than 3.5 am. The results of XPS showed that the metals in the catalysts existed in zero and other valent state. Inner metal, as an organosilicon compound folded around the metal particle, was protected from oxidation. FMR and static magnetic measuremeat revealed that metal particles were spheroidal and of superparamagnetism. Of all the caralysts the catalytic activity of Ni-Mn-La/D4 was the highest in hydrogenating furfuraldehyde into furfuralcohol.

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition

Metal–organic chemical vapor deposition(MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence(PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1%([Mn]A= 0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3+acceptor with holes in the valence band. With Mn concentration increasing,the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of In Ga N channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free In Ga N channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013cm-2is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that In Ga N channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional Ga N channel heterostructure. The gratifying results imply that In Ga N channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As(001)substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition(LP-MOCVD)system.The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters.It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum(358 arc sec)of the(004)ω-rocking curve,and a smooth surface with a low root-mean-square roughness of about 6 nm,which is typical in the case of the heteroepitaxial single-crystal films.In addition,we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra.It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The sources of trimethylaluminium(TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction(HRXRD) measurement showed that the full width at half maximum(FWHM) of the(0002) and(10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square(RMS) roughness was lower to 0.2 nm as tested by atomic force microscope(AFM). The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

具有多MO喷嘴垂直MOCVD反应腔外延层厚度均匀性的优化理论及应用

金属有机物化学气相淀积(metal organic chemical vapor deposition,MOCVD)作为异质结半导体材料外延的关键手段,其外延层厚度均匀性会直接影响产品的良率.本文将理论与实验相结合,针对3个MO源喷嘴的垂直反应腔MOCVD,将各MO源喷嘴等效为蒸发面源,并引入一等效高度来涵盖MOCVD的相关外延参数,建立外延层厚度与各MO源喷嘴流量间的定量关系,设计并利用EMCORE D125 MOCVD系统外延生长了AlGaAs谐振腔结构,根据实验测得的外延层厚度分布结果,利用最小二乘法对模型参数进行了拟合提取,基于提取的模型参数,给出了优化外延层厚度均匀性的方法.4 in(1 in=2.54 cm)外延片mapping反射谱的统计结果为,腔模的平均波长为651.89 nm,标准偏差为1.03 nm,厚度均匀性达到0.16%.同时外延生长了GaInP量子阱结构,4 in外延片mapping荧光光谱的统计结果为,峰值波长平均值为653.3 nm,标准偏差仅为0.46 nm,厚度均匀性达到0.07%.本文提出的调整外延层厚度均匀性的方法具有简单、有效、快捷的特点,且可以进一步推广至具有4个MO喷嘴以上的垂直反应腔MOCVD系统.

CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION

Metalization is widely used in integrated circuit devices to connect millions of devices together. The success of metallization depends strongly on diffusion barrier technology, due to the interactions of metals with surrounding materials. As device dimension further shrinks, diffusion barrier technology is facing more challenges and opening up new opportunities, particularly for chemical vapor deposition (CVD) process technology. CVD is attracting increased attention in advanced metallization mainly due to its capability in producing conformal thin films. In this review, we will focus our discussion on CVD processes for three most important classes of diffusion barriers: Ti, W and Ta-based diffusion banters. Examples from current literature will be examined.

基于工程应用的CW-GMAW熔滴过渡形态表征

综述了涉及工程应用的冷丝熔化极气体保护焊(Cold wire gas metal arc welding,CW-GMAW)熔滴过渡形态特征。结果表明,在大电流、强规范、富氩混合气体保护下,CW-GMAW工艺的熔滴过渡形态呈喷射过渡;当电流较小、电弧电压较低时,可能为滴状过渡,甚至在弧压很低时,呈现短路过渡形态。该工艺电弧发生偏向冷丝的位移,弧长变短甚至发生短路,与冷丝送进速率比增高及冷丝在电弧中产生大量金属蒸气时弧柱电阻下降有关。在具有富氩混合保护气体的相同工艺参数下,CWGMAW转变电流比GMAW降低了4%~7%。焊接工艺参数对CW-GMAW和GMAW工艺熔滴过渡形态的影响规律大致相近,但前者因涉及冷丝送进速率比和电极焊丝送进速度,以及它们的匹配等,使焊接电流的影响更为复杂。

n-Ga_(2)O_(3)/p-GaAs异质结日盲紫外探测器制备

采用金属有机化学气相沉积(MOCVD)工艺在p-GaAs(100)衬底上外延了Ga_(2)O_(3)薄膜并制备了n-Ga_(2)O_(3)/p-GaAs异质结日盲紫外探测器。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对Ga_(2)O_(3)薄膜表面形貌、晶体质量进行了测试与分析。结果表明,Ga_(2)O_(3)薄膜呈单一晶向,薄膜表面平整且为Volmer-Weber模式外延。测试表明,n-Ga_(2)O_(3)/p-GaAs异质结探测器具有明显的整流特性。器件在5 V反向偏压和紫外光(254 nm)照射下实现了超过3.0×10^(4)的光暗电流比、7.0 A/W的响应度、3412%的外量子效率、4.6×10^(13)Jones的探测率。我们利用TCAD软件对器件结构进行仿真,得到了器件内的电场分布和能带结构,并分析了器件的工作原理。该异质结探测器性能较好,制造工艺简单,为Ga_(2)O_(3)超灵敏日盲紫外探测器的研制提供了新途径。

脱合金纳米材料的制备及其在碱金属离子电池负极中的应用进展

碱金属离子电池包括锂离子电池、钠离子电池和钾离子电池等,是一种非常有应用前景的电化学储能装置.在“双碳”背景下,随着电动汽车的快速普及,对电池的能量密度提出了更高的要求.硅、锗、锡、锑、铋等因具有高的理论比容量有望实现在高能量密度电池中的应用.由于具有成本低、结构可控和工业应用潜力大等特点,脱合金技术常用来制备硅、锗、锑等负极材料,并实现对硅、锗、锑等脱合金材料的结构、形态和空间排列的动态控制.本文阐述了脱合金技术的常见分类和代表性研究进展,重点讨论了由脱合金技术制备多种维度的纳米材料以及它们在碱金属离子电池等储能领域的应用情况,最后对脱合金技术的发展趋势以及脱合金技术在储能领域的应用前景进行了展望.

p-Si/n-Ga_(2)O_(3)异质结制备与特性研究

本实验采用金属有机化学气相沉积(MOCVD)工艺,在p(111)型Si衬底上制备了p-Si/n-Ga_(2)O_(3)结构的PN结。通过X射线衍射仪、原子力显微镜等对样品进行了晶体结构、表面形貌、表面粗糙度等的表征分析;通过磁控溅射与蒸镀方法在样品上生长Ti/Au电极并进行I-V特性曲线、开启电压、开关电流比、反向饱和电流、理想因子、零偏压下的势垒高度等结特性测试,研究了掺杂浓度与薄膜厚度对PN结特性的影响,并对其原因进行了分析;通过二步生长法和缓冲层温度优化实验,减少了Si衬底与β-Ga_(2)O_(3)之间的晶格失配与热失配带来的影响,对薄膜与器件特性进行了优化。最终获得了表面粗糙度最低可达到4.21 nm的高质量n型β-Ga_(2)O_(3)薄膜,以及具有较低理想因子(42.1)的PN结。

液态金属限流器电阻特性测试及建模

液态金属限流器依靠电弧电阻实现故障限制功能,已有研究缺乏对电弧发生发展全过程的分析,未能完整描述其电阻变化特性。本文通过实验方法对液态金属单元的限流工作特性进行了测试,分析了限流过程四个阶段的电阻变化特点,进而建立了描述其完整工作过程的电阻特性数学模型,并与实验结果取得了良好的吻合。此模型有助于实现液态金属单元在电力系统中限流特性的快速仿真计算。