Hydrogenic donor impurity states and intersubband optical absorption spectra of monolayer transition metal dichalcogenides in dielectric environments

The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.

Influence of patterned TiO_2/SiO_2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes

Ridge InGaN multi-quantum-well-structure （MQW） edge-emitting laser diodes （LDs） were grown on （0001） sapphire substrates by low-pressure metal-organic chemical vapour deposition （MOCVD）. The dielectric TiO2/SiO2 front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.

Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate

Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.

A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates

By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.

Dielectric polymer based electrolytes for high-performance all-solid-state lithium metal batteries

Solid polymer electrolytes (SPEs) are urgently required for achieving practical all-solid-state lithium metal batteries (ASSLMBs) but remain plagued by low ionic conductivity.Herein,we propose a strategy of salt polarization to fabricate a highly ion-conductive SPE by employing a high-dielectric polymer that can interact strongly with lithium salts.Such a polymer with large dipole moments can guide lithium cations (Li^(+)) to be arranged along the chain,forming a continuous pathway for Li^(+) hopping within the SPE.The as-fabricated SPE,poly(vinylidene difluoride)(PVDF)-LiN(SO_(2)F)_(2)(LiFSI),has an extraordinarily high dielectric constant (up to 10^(8)) and ultrahigh ionic conductivity (0.77×10^(-3)S cm^(-1)).Based on the PVDF–LiFSI SPE,the assembled Li metal symmetrical cell shows excellent Li plating/stripping reversibility at 0.1 m A cm^(-2),0.1 m Ah cm^(-2)over 1500 h^(-1) the ASS LiFePO_(4) batteries deliver long-term cycling stability at 1 C over 350 cycles (2.74 mg cm^(-2)) and an ultralong cycling lifespan of over 2600 h(100 cycles) with high loading (11.5 mg cm^(-2)) at 28°C.First-principles calculations further reveal the ion-dipole interactions-controlled conduction of Li^(+) in PVDF–LiFSI SPE along the PVDF chain.This work highlights the critical role of dielectric permittivity in SPE,and provides a promising path towards high-energy,long-cycling lifespan ASSLMBs.

Study on guided-mode resonance characteristic of multilayer dielectric grating with broadband and wide using-angle

Guided-mode resonance in a diffraction band of multilayer dielectric gratings may lead to a catastrophic result in laser system, especially in the ultrashort pulse laser system, so the inhibition of guided-mode resonance is very important. In this paper the characteristics of guided-mode resonance in multilayer dielectric grating are studied with the aim of better understanding the physical process of guided-mode resonance and designing a broadband multilayer dielectric grating with no guided-mode resonance. By employing waveguide theory, all guided-wave modes appearing in multilayer dielectric grating are found, and the incident conditions, separately, corresponding to each guided-wave mode are also obtained. The electric field enhancement in multilayer dielectric grating is shown obviously. Furthermore, from the detailed analyses on the guided-mode resonance conditions, it is found that the reduction of the grating period would effectively avoid the appearing of guided-mode resonance. And the expressions for calculating maximum periods, which ensure that no guided-mode resonance occurs in the requiring broad angle or wavelength range, are first reported. The above results calculated by waveguide theory and Fourier mode method are compared with each other, and they are coincident completely. Moreover, the method that relies on waveguide theory is more helpful for understanding the guided-mode resonance excited process and analyzing how each parameter affects the characteristic of guided-mode resonance. Therefore, the effects of multilayer dielectric grating parameters, such as period, fill factor, thickness of grating layer, et al., on the guided-mode resonance characteristic are discussed in detail based on waveguide theory, and some meaningful results are obtained.

Analysis of the spatial filter of a dielectric multilayer film reflective cutoff filter-combination device

The experiment setup of a reflecting combination device, which has more advantages than a transmitting combination device, is designed in this study. To achieve angular spectrum selectivity, only one type of reflective component is needed,so difficulties of design and preparation are reduced. A dielectric multilayer film is applied to the reflective component, and the long wave-pass coating stacks of the structure are designed. To achieve high stopband transmittance and reduce electric field intensity at a wavelength of 1053 nm, an objective function is proposed for designing an optimized coating. The final optimized coating has good spectral characteristics and a high laser-induced damage threshold. A dielectric multilayer film with high reflectance plays an important role in preparing and applying a dielectric multilayer film reflecting cutoff filter-combination device.

A transparent electromagnetic-shielding film based on one-dimensional metal–dielectric periodic structures

In this study, we designed and fabricated optical materials consisting of alternating ITO and Ag layers. This approach is considered to be a promising way to obtain a light-weight, ultrathin and transparent shielding medium, which not only transmits visible light but also inhibits the transmission of microwaves, despite the fact that the total thickness of the Ag film is much larger than the skin depth in the visible range and less than that in the microwave region. Theoretical results suggest that a high dielectric/metal thickness ratio can enhance the broadband and improve the transmittance in the optical range. Accordingly, the central wavelength was found to be red-shifted with increasing dielectric/metal thickness ratio. A physical mechanism behind the controlling transmission of visible light is also proposed. Meanwhile, the electromagnetic shielding effectiveness of the prepared structures was found to exceed 40 dB in the range from 0.1 GHz to 18 GHz, even reaching up to 70 dB at 0.1 GHz, which is far higher than that of a single ITO film of the same thickness.

Identification of the Intrinsic Dielectric Properties of Metal Single Atoms for Electromagnetic Wave Absorption

Atomically dispersed metals on N-doped carbon supports(M-N_(xCs)) have great potential applications in various fields.However,a precise understanding of the definitive relationship between the configuration of metal single atoms and the dielectric loss properties of M-N_(xCs) at the atomic-level is still lacking.Herein,we report a general approach to synthesize a series of three-dimensional(3D)honeycomb-like M-N_xC(M=Mn,Fe,Co,Cu,or Ni) containing metal single atoms.Experimental results indicate that 3D M-N_(xCs) exhibit a greatly enhanced dielectric loss compared with that of the NC matrix.Theoretical calculations demonstrate that the density of states of the d orbitals near the Fermi level is significantly increased and additional electrical dipoles are induced due to the destruction of the symmetry of the local microstructure,which enhances conductive loss and dipolar polarization loss of 3D M-N_(xCs),respectively.Consequently,these 3D M-N_(xCs) exhibit excellent electromagnetic wave absorption properties,outperforming the most commonly reported absorbers.This study systematically explains the mechanism of dielectric loss at the atomic level for the first time and is of significance to the rational design of high-efficiency electromagnetic wave absorbing materials containing metal single atoms.

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.

Comparative Study of the One Dimensional Dielectric and Metallic Photonic Crystals

The optical transmission properties of two types of photonic crystals have been analyzed by using the transfer matrix method. The first one is the dielectric photonic crystal (DPC), and the second is the metallic photonic crystal (MPC). We found the dielectric and metallic photonic crystals have different transmission spectra. The effect of the most prameters on the transmission spectra of the dielectric and metallic photonic crystals has been studied.

Three-dimensional electric potential induced by a point singularity in a multilayered dielectric medium

A simple and effective method is proposed to derive the three-dimensional electric potential induced by a point singularity of any type in an N-phase dielectric medium composed of N-2 intermediate dielectric layers of equal thickness encased in two semi-infinite dielectric media. The point singularity can include a point charge or a point electric dipole. The original boundary value problem for the N-phase medium is reduced to the determination of a single unknown three-dimensional harmonic function through satisfaction of the continuity conditions across all of the N-1 perfect planar interfaces. The single harmonic function can be completely determined after analytically solving the resulting linear recurrence relations, which are independent of the type and the specific location of the singularity. When the singularity is a point charge, we obtain the self-energy of the point charge expressed in terms of a single function and the Coulomb force on the point charge expressed in terms of the negative derivative of this function.

NETWORK ANALYSIS OF EIGENVALUE PROBLEM FOR MULTILAYER DIELECTRIC WAVEGUIDE CONSISTING OF ARBITRARY NUMBER OF LAYERS

In this paper,the eigenvalue problem of a multilayer dielectric waveguide consisting of arbitrarynumber of layers is solved by the microwave network method.A general program with the function of com-puter graphics has been developed for analyzing the dispersion characteristics and the electromagnetic fielddistributions of an N layer dielectric waveguide.As an example of practical applications,the procedure ofmode conversion and mode separation in dielectric branching waveguides is vividly demonstrated throughanalyzing the field distributions of asymmetric multilayer dielectric structures and the general rules of modeconversion are discussed.

Analysis of restriction factors of widening diffraction bandwidth of multilayer dielectric grating

In order to design a multilayer dielectric grating with wide-bandwidth diffraction spectrum, the restriction factors of both the reflection bandwidth of multilayer dielectric high-reflectivity mirror and the guided-mode resonance phe- nomenon are studied in detail. The reflection characteristics of high-reflectivity mirror in zeroth and -lst transmitted diffraction orders are quantitatively evaluated. It is found that the reflection bandwidth of high-reflectivity mirror in -lst transmitted diffraction order, which determines the final diffraction bandwidth of multilayer dielectric grating, is evidently compressed. Furthermore, it is demonstrated that the reducing of grating period is an effective approach to the elimination of guided mode resonance over a required broad band range both spectrally and angularly. In addition, the expressions for calculating the maximum period ensuring no guided mode resonance in the required bandwidth are derived. Finally, two high-efficiency pulse-compression gratings with broad-band are presented.

ANALYSIS OF DISPERSION CHARACTERISTICS FOR A CIRCULAR DIELECTRIC WAVEGUIDE WITH PERIODIC METALLIC STRIPS

The dispersion characteristics of a circular dielectric waveguide with periodic metal-lic strips are analyzed by the Galerkin’s method.After obtaining the rigorous dispersion equation,the dispersion curves for both TE01and TM01modes are calculated by the improved Newton’smethod.The variations of the normalized center frequency,width and maximum attenuation con-stant of the stopband with the normalized width of the metallic strips are given.The convergenceproperties of numerical solutions are also discussed.On the basis of the analysis,some usefulguidelines for filter design are thereby suggested.

Coupled edge plasmon modes of metal/dielectric multi-wedges

We present a metallic/dielectric multi-wedge model to investigate the coupled edge plasmon modes （CEPMs）, where all wedges have a common edge and the wave propagates along the edge direction. A general theoretical method valid to many practical structures is presented. The analytical dispersion relations of CEPMs in these structures are obtained and the CEPM properties are discussed with numerical results and the dispersion relations. For all structures mentioned in this paper, we find that the structures containing an even number of metallic wedges have four CEPMs and those with an odd-number of metallic wedges have two CEPMs. Further, the periodic structures containing any odd number of periods and any even number of periods possess their common CEPMs, respectively.

Controlling optical responses through local dielectric resonance in nanometre metallic clusters

Optical responses in dilute composites are controlled through the local dielectric resonance of metallic clusters. We consider two located metallic clusters close to each other with admittances ε1 and ε2. Through varying the difference admittance ratio η[= （ε2 - ε0）/（ε1 - ε0）], we find that their optical responses are determined by the local resonance. There is a blueshift of absorption peaks with the increase of η- Simultaneously, it is known that the absorption peaks will be redshifted by enlarging the cluster size. By adjusting the nano-metallic cluster geometry, size and admittances, we can control the positions and intensities of absorption peaks effectively. We have also deduced the effective linear optical responses of three-component composites εe=ε0 （1＋∑^n n=1[（γn1＋ηγn2）/（ε0（s-sn））]） and the sum rule of cross sections：∑^n n=1（γn1＋ηγn2）=Nh1＋Nh2,, where Nh1and Nh2 are the numbers of εl and ε2 bonds along the electric field, respectively. These results may be beneficial to the study of surface plasmon resonances on a nanometre scale.

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.

Strengthening and softening in gradient nanotwinned FCC metallic multilayers

Plastic-deformation behaviors of gradient nanotwinned(GNT)metallic multilayers are investigated in nanoscale via molecular dynamics simulation.The evolution law of deformation behaviors of GNT metallic multilayers with different stacking fault energies(SFEs)during nanoindentation is revealed.The deformation behavior transforms from the dislocation dynamics to the twinning/detwinning in the GNT Ag,Cu,to Al with SFE increasing.In addition,it is found that the GNT Ag and GNT Cu strengthen in the case of a larger twin gradient based on more significant twin boundary(TB)strengthening and dislocation strengthening,while the GNT Al softens due to more TB migration and dislocation nucleation from TB at a larger twin gradient.The softening mechanism is further analyzed theoretically.These results not only provide an atomic insight into the plastic-deformation behaviors of certain GNT metallic multilayers with different SFEs,but also give a guideline to design the GNT metallic multilayers with required mechanical properties.