Despite the promising potential of transition metal oxides(TMOs)as capacitive deionization(CDI)electrodes,the actual capacity of TMOs electrodes for sodium storage is significantly lower than the theoretical capacity,...Despite the promising potential of transition metal oxides(TMOs)as capacitive deionization(CDI)electrodes,the actual capacity of TMOs electrodes for sodium storage is significantly lower than the theoretical capacity,posing a major obstacle.Herein,we prepared the kinetically favorable Zn_(x)Ni_(1−x)O electrode in situ growth on carbon felt(Zn_(x)Ni_(1−x)O@CF)through constraining the rate of OH^(−)generation in the hydrothermal method.Zn_(x)Ni_(1−x)O@CF exhibited a high-density hierarchical nanosheet structure with three-dimensional open pores,benefitting the ion transport/electron transfer.And tuning the moderate amount of redox-inert Zn-doping can enhance surface electroactive sites,actual activity of redox-active Ni species,and lower adsorption energy,promoting the adsorption kinetic and thermodynamic of the Zn_(0.2)Ni_(0.8)O@CF.Benefitting from the kinetic-thermodynamic facilitation mechanism,Zn_(0.2)Ni_(0.8)O@CF achieved ultrahigh desalination capacity(128.9 mgNaCl g^(-1)),ultra-low energy consumption(0.164 kW h kgNaCl^(-1)),high salt removal rate(1.21 mgNaCl g^(-1) min^(-1)),and good cyclability.The thermodynamic facilitation and Na^(+)intercalation mechanism of Zn_(0.2)Ni_(0.8)O@CF are identified by the density functional theory calculations and electrochemical quartz crystal microbalance with dissipation monitoring,respectively.This research provides new insights into controlling electrochemically favorable morphology and demonstrates that Zn-doping,which is redox-inert,is essential for enhancing the electrochemical performance of CDI electrodes.展开更多
This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application ...This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.展开更多
Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models i...Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.展开更多
Oxide films formed on the surfaces of Fe-based bulk metallic glasses in the temperature range between 373 K and 573 K were characterized and their effects on the corrosion behaviors were investigated by microstructura...Oxide films formed on the surfaces of Fe-based bulk metallic glasses in the temperature range between 373 K and 573 K were characterized and their effects on the corrosion behaviors were investigated by microstructural and electrochemical analysis. The oxide film formed at 573 K is iron-rich oxide and it exhibits an n-type semiconductor at a higher potential than 0.35 V and a p-type semiconductor at a lower potential than 0.35 V. Capacitance measurements show that the donor density decreases with the increase in oxidation temperature, while the thickness of the space charge layer increases with the oxidation temperature rising. The result of immersion tests shows that the mass loss rate increases with the oxidation temperature rising. Therefore, the correlation between microstructure and corrosion resistance needs to be proposed because the corrosion resistance is deteriorated with the development of the oxide films.展开更多
The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the incre...The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF.Furthermore,the grain sizes of varistors were varied from 6.8μm to 9.8μm.The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900°C and fallen drastically to 410 V/mm for the sample sintered at 1050°C.In addition,there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm2.However,the density of the varistor decreased with an increase of temperature from 5.41 g/cm3 to 5.24 g/cm3.With this base,the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.展开更多
A uniplanar capacitive sensor with 5-electrodes on one plane substrate and a large reflector electrode,was designed to get the corresponding capacitance information for weathering damage detection of non-metallic mate...A uniplanar capacitive sensor with 5-electrodes on one plane substrate and a large reflector electrode,was designed to get the corresponding capacitance information for weathering damage detection of non-metallic materials exposed to a service environment.A 2-D finite-element method was employed to simulate the electric potential distribution and capacitance measurements for the sensor.2 marble slabs,one was healthy and the other was notched,were experimentally detected.Both the simulation and the preliminary experimental results show that the measured capacitances decrease after weathering damage occurs in nonmetallic material.The reflector can enlarge the sensitive depth.The weathering assessment of nonmetallic materials can be done by processing the measured capacitances.The proposed approach can effectively detect the weathering damage of nonmetallic material and can be practically used for in-situ weathering damage evaluation.展开更多
在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effec...在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)可以应用于更高开关速度,其开关瞬态特性更为复杂,开关瞬态解析建模也更加困难。该文总结现有的针对SiC MOSFET与二极管换流对的开关瞬态解析建模方法,在建模过程中依次引入各种简化假设,按照简化程度由低到高的顺序,梳理解析建模的逐步简化过程。通过对比,评估各模型的优缺点以及适用场合,对其中准确性、实用性都较强的分段线性模型进行详细介绍;之后,对开关瞬态建模中关键参数的建模方法进行总结与评价;最后,指出现有SiC MOSFET开关瞬态解析模型中存在的问题,并对其未来发展给出建议。展开更多
为了进一步发挥电子纸优势,提升其原笔迹书写功能,介绍手写交互和笔写交互技术,通过对ITO工艺与铜金属网格(Cu Metal Mesh)工艺进行比较,并对手写触控磁容一体的铜金属网格进行技术分析,阐述了磁容一体手写触控技术原理,通过与目前主流...为了进一步发挥电子纸优势,提升其原笔迹书写功能,介绍手写交互和笔写交互技术,通过对ITO工艺与铜金属网格(Cu Metal Mesh)工艺进行比较,并对手写触控磁容一体的铜金属网格进行技术分析,阐述了磁容一体手写触控技术原理,通过与目前主流书写技术进行比较,得出磁容一体手写触控技术的优势。证明了采用最先进的铜金属网格磁容一体技术,可以大幅降低电子纸手写触控应用成本并带来更好的人机交互体验,对电子纸应用普及和推广起到积极作用。展开更多
基金supported by The National Natural Science Foundation of China(22276137,52170087)the Fundamental Research Funds for the Central Universities(XJEDU2023Z009).
文摘Despite the promising potential of transition metal oxides(TMOs)as capacitive deionization(CDI)electrodes,the actual capacity of TMOs electrodes for sodium storage is significantly lower than the theoretical capacity,posing a major obstacle.Herein,we prepared the kinetically favorable Zn_(x)Ni_(1−x)O electrode in situ growth on carbon felt(Zn_(x)Ni_(1−x)O@CF)through constraining the rate of OH^(−)generation in the hydrothermal method.Zn_(x)Ni_(1−x)O@CF exhibited a high-density hierarchical nanosheet structure with three-dimensional open pores,benefitting the ion transport/electron transfer.And tuning the moderate amount of redox-inert Zn-doping can enhance surface electroactive sites,actual activity of redox-active Ni species,and lower adsorption energy,promoting the adsorption kinetic and thermodynamic of the Zn_(0.2)Ni_(0.8)O@CF.Benefitting from the kinetic-thermodynamic facilitation mechanism,Zn_(0.2)Ni_(0.8)O@CF achieved ultrahigh desalination capacity(128.9 mgNaCl g^(-1)),ultra-low energy consumption(0.164 kW h kgNaCl^(-1)),high salt removal rate(1.21 mgNaCl g^(-1) min^(-1)),and good cyclability.The thermodynamic facilitation and Na^(+)intercalation mechanism of Zn_(0.2)Ni_(0.8)O@CF are identified by the density functional theory calculations and electrochemical quartz crystal microbalance with dissipation monitoring,respectively.This research provides new insights into controlling electrochemically favorable morphology and demonstrates that Zn-doping,which is redox-inert,is essential for enhancing the electrochemical performance of CDI electrodes.
基金Project supported by National Natural Science Foundation of China(Grant Nos.10874070,60976001,and 50872051)Natural Science Foundation of Jiangsu Province of China(Grant No.BK2008253)+2 种基金State Key Program for Basic Research of China(Grant Nos.2007CB935401 and 2010CB934402)Natural Science Foundation of Jiangsu Province for Universities(Grant No.09KJB510014)Nanjing University of Posts and Telecommunications Research Fund(Grant No.NY208057 and JG03309JX37)
文摘This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.
基金supported by the National Natural Science Foundation of China(Grant No.61274112)
文摘Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.
基金supported by the National Natural Science Foundation of China (No.51165038)the Doctoral Startup Fund of Nanchang Hangkong University (No.EA201103238)the Korean Ministry of Commerce, Industry and Energy through the project entitled as "The Development of Structural Metallic Materials and Parts with Super Strength and High Performance"
文摘Oxide films formed on the surfaces of Fe-based bulk metallic glasses in the temperature range between 373 K and 573 K were characterized and their effects on the corrosion behaviors were investigated by microstructural and electrochemical analysis. The oxide film formed at 573 K is iron-rich oxide and it exhibits an n-type semiconductor at a higher potential than 0.35 V and a p-type semiconductor at a lower potential than 0.35 V. Capacitance measurements show that the donor density decreases with the increase in oxidation temperature, while the thickness of the space charge layer increases with the oxidation temperature rising. The result of immersion tests shows that the mass loss rate increases with the oxidation temperature rising. Therefore, the correlation between microstructure and corrosion resistance needs to be proposed because the corrosion resistance is deteriorated with the development of the oxide films.
文摘The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF.Furthermore,the grain sizes of varistors were varied from 6.8μm to 9.8μm.The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900°C and fallen drastically to 410 V/mm for the sample sintered at 1050°C.In addition,there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm2.However,the density of the varistor decreased with an increase of temperature from 5.41 g/cm3 to 5.24 g/cm3.With this base,the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.
基金supported by the National Natural Science Foundation of China(60575015)
文摘A uniplanar capacitive sensor with 5-electrodes on one plane substrate and a large reflector electrode,was designed to get the corresponding capacitance information for weathering damage detection of non-metallic materials exposed to a service environment.A 2-D finite-element method was employed to simulate the electric potential distribution and capacitance measurements for the sensor.2 marble slabs,one was healthy and the other was notched,were experimentally detected.Both the simulation and the preliminary experimental results show that the measured capacitances decrease after weathering damage occurs in nonmetallic material.The reflector can enlarge the sensitive depth.The weathering assessment of nonmetallic materials can be done by processing the measured capacitances.The proposed approach can effectively detect the weathering damage of nonmetallic material and can be practically used for in-situ weathering damage evaluation.
文摘为了进一步发挥电子纸优势,提升其原笔迹书写功能,介绍手写交互和笔写交互技术,通过对ITO工艺与铜金属网格(Cu Metal Mesh)工艺进行比较,并对手写触控磁容一体的铜金属网格进行技术分析,阐述了磁容一体手写触控技术原理,通过与目前主流书写技术进行比较,得出磁容一体手写触控技术的优势。证明了采用最先进的铜金属网格磁容一体技术,可以大幅降低电子纸手写触控应用成本并带来更好的人机交互体验,对电子纸应用普及和推广起到积极作用。
