MODELING OF METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

Flexible and stretchable photodetectors and gas sensors for wearable healthcare based on solution-processable metal chalcogenides

Wearable smart sensors are considered to be the new generation of personal portable devices for health monitoring.By attaching to the skin surface,these sensors are closely related to body signals(such as heart rate,blood oxygen saturation,breath markers,etc.)and ambient signals(such as ultraviolet radiation,inflammable and explosive,toxic and harmful gases),thus providing new opportunities for human activity monitoring and personal telemedicine care.Here we focus on photodetectors and gas sensors built from metal chalcogenide,which have made great progress in recent years.Firstly,we present an overview of healthcare applications based on photodetectors and gas sensors,and discuss the requirement associated with these applications in detail.We then discuss advantages and properties of solution-processable metal chalcogenides,followed by some recent achievements in health monitoring with photodetectors and gas sensors based on metal chalcogenides.Last we present further research directions and challenges to develop an integrated wearable platform for monitoring human activity and personal healthcare.

Metal halide perovskite photodetectors: Material features and device engineering

In recent years, the rapid progress of metal halide perovskite solar cells has been witnessed by the rocketing power conversion efficiency. In addition, perovskites have opened up a great opportunity for high performance photodetectors(PDs), due to their attractive optical and electrical properties. This review summarizes the latest progress of perovskitebased PDs, aiming to give a comprehensive understanding of the material design and device engineering in perovskite PDs.To begin with, the performance parameters and device configurations of perovskite PDs are introduced, which are the basis for the next discussion. Next, various PDs based on perovskites in different morphologies are discussed from two aspects:the preparation method, and device performance. Then, several device engineering strategies to enhance the performance of perovskite-based PDs are highlighted, followed by the introduction of flexible and narrow-band perovskite PDs. Finally,key issues and major challenges of perovskite PDs that need to be addressed in the future are outlined.

Two-dimensional transition metal dichalcogenides for lead halide perovskites-based photodetectors: band alignment investigation for the case of CsPbBr3/MoSe2

The distinguished electronic and optical properties of lead halide perovskites(LHPs)make them good candidates for active layer in optoelectronic devices.Integrating LHPs and two-dimensional(2 D)transition metal dichalcogenides(TMDs)provides opportunities for achieving increased performance in heterostructured LHPs/TMDs based optoelectronic devices.The electronic structures of LHPs/TMDs heterostructures,such as the band offsets and interfacial interaction,are of fundamental and technological interest.Here CsPbBr3 and MoSe2 are taken as prototypes of LHPs and 2 D TMDs to investigate the band alignment and interfacial coupling between them.Our GGA-PBE and HSE06 calculations reveal an intrinsic type-II band alignment between CsPbBr3 and MoSe2.This type-II band alignment suggests that the performance of CsPbBr3-based photodetectors can be improved by incorporating MoSe2 monolayer.Furthermore,the absence of deep defect states at CsPbBr3/MoSe2 interfaces is also beneficial to the better performance of photodetectors based on CsPbBr3/MoSe2 heterostructure.This work not only offers insights into the improved performance of photodetectors based on LHPs/TMDs heterostructures but it also provides guidelines for designing high-efficiency optoelectronic devices based on LHPs/TMDs heterostructures.

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.

金属氧化物异质结光电探测器研究进展

金属氧化物(metal oxide,MO)因其具有易于制备、高稳定性、对载流子的选择性传输等优点,被广泛应用于光电探测领域。MO材料具有较强的光吸收,但表面效应和缺陷态等问题导致了MO光电探测器响应速度低和暗电流较大的问题。异质结中的内建电场可以有效促进光生电子-空穴对的分离,从而提升器件响应速度和降低器件暗电流。因此,构建金属氧化物异质结光电探测器(heterojunction photodetectors,HPDs),对于MO在光电子领域的进一步应用具有重要的意义。本文先介绍了MO的界面性质,然后围绕PN、PIN和同型异质结3种结构,对金属氧化物HPDs的工作机制进行了阐述。接着对响应波段在紫外-可见-近红外光区的、具有不同结构的MO/MO和MO/Si HPDs的性能参数进行了分析和比较,并讨论了金属氧化物HPDs的性能优化方法,最后对金属氧化物HPDs的发展进行了展望。

掺银硫系玻璃光电探测器响应波长特性研究

由于硫系玻璃具有良好的光学性质,在非线性光学等方面研究广泛,但基于硫系玻璃光电探测器的相关研究却很少。本文利用真空共热蒸发技术制备了不同掺银比例的硫系玻璃薄膜作为半导体膜层结构,并设计构建了金属-绝缘体-半导体结构的自供电光电探测器,探究了该光电探测器的响应光谱范围。结果表明,该探测器对可见光到近红外区域的光均有响应。针对掺银硫系玻璃光电探测器在635 nm波长激光下,研究了探测器响应电压与激发功率之间的关系。当激光功率小于10 mW时,探测器响应电压与激发功率线性相关;当激光功率大于10 mW时,探测器响应电压逐渐饱和。探测器的上升和衰减时间分别为3.932 s和1.522 s。本研究为硫系玻璃材料在自供电光电探测器领域的应用提供了证明。

基于磁控溅射法生长hBN薄膜的MSM型真空紫外探测器(特邀)

针对目前大面积高质量六方氮化硼(hBN)薄膜的制备与转移存在均匀性、晶粒控制、无损转移等问题,采用射频磁控溅射技术成功在2英寸硅和蓝宝石介电衬底上沉积了hBN薄膜,拉曼光谱、X射线光电子能谱表征证实了薄膜具有明显的hBN特征。制备了hBN基金属-半导体-金属型光电探测器,并探究了电极材料、薄膜厚度以及叉指电极宽度和间距对探测性能的影响。优选出的Ni电极探测器具有极低的暗电流(<3 pA@100 V),对185 nm波长光具有明显光响应,响应度和比探测率分别为2.769 mA/W和2.969×10^(9)Jones。

基于倒金字塔结构的自供电Si/PEDOT:PSS异质结光电探测器

随着光电器件的进一步发展,陷光结构得到广泛关注,但是倒金字塔结构、尺寸与其陷光性能之间的关系有待深入研究。本文采用铜银共辅助腐蚀法制备倒金字塔结构并实现倒金字塔结构的尺寸在1μm以下调控,研究发现平均尺寸为1μm倒金字塔结构具有最优异的陷光性能。将具有优异陷光性能的倒金字塔结构硅衬底应用于Si/PEDOT:PSS异质结光电探测器,该光电探测器在外加0 V偏压条件下对980 nm波长的光具有61mA/W的响应度和9.20×10^(12)Jones的比探测率,实现了卓越的光电响应性能。本文为高性能Si/PEDOT:PSS异质结光电探测器的制备提供了一种新思路,证明了倒金字塔结构具有广阔的应用前景。

Visible-to-near-infrared photodetector based on graphene–MoTe2–graphene heterostructure

Graphene and transition metal dichalcogenides(TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ~1.0 eV for near infrared(NIR)photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene–MoTe2–graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain–source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain–source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene–MoTe2–graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures.However,common metal electrode materials have similar and high work functions,making it difficult to form an asymmetric contacts structure with a large work function difference.Herein,Mo2C crystals with low work function(3.8 eV) was obtained by chemical vapor deposition(CVD) method.The large work function difference between Mo2C and Au allowed us to synthesize an efficient Mo2C/MoS2/Au photodetector with asymmetric metal contact structure,which enables light detection without external electric power.We believe that this novel device provides a new direcfor the design of miniature self-powered photodetectors.These results also highlight the great potential of ultrathin Mo2C prepared by CVD in heterojunction device applications.

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

The current-voltage （I-V） characteristics of 4H-SiC metal-semiconductor-metal （MSM） ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the photocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent will be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3μm.

Graphene-based heterojunction for enhanced photodetectors

Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on–off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review,the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed.Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide(TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally,the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

Transition metal dichalcogenides(TMDs)and perovskites are among the most attractive and widely investigated semiconductors in the recent decade.They are promising materials for various applications,such as photodetection,solar energy harvesting,light emission,and many others.Combining these materials to form heterostructures can enrich the already fascinating properties and bring up new phenomena and opportunities.Work in this field is growing rapidly in both fundamental studies and device applications.Here,we review the recent findings in the perovskite-TMD heterostructures and give our perspectives on the future development of this promising field.The fundamental properties of the perovskites,TMDs,and their heterostructures are discussed first,followed by a summary of the synthesis methods of the perovskites and TMDs and the approaches to obtain high-quality interfaces.Particular attention is paid to the TMD-perovskite heterostructures that have been applied in solar cells and photodetectors with notable performance improvement.Finally through our analysis,we propose an outline on further fundamental studies and the promising applications of perovskite-TMD heterostructures.

基于范德瓦尔斯材料的红外光电探测器研究进展

近年来,基于二维范德瓦尔斯材料的本征吸收、能带调制、结构设计以及新原理的红外光电探测器展现了巨大的潜力,并取得了突出的研究成果。对该领域的研究进展进行系统总结和分析,有助于进一步促进范德瓦尔斯材料在红外光探测领域的应用。基于此,本文首先概述了红外光电探测器的发展历程和分类。进而,重点总结并分析了范德瓦尔斯材料在红外光电探测器的红外光响应机制。在此基础上,进一步阐述了范德瓦尔斯材料红外光电探测器的性能优化方法、机制和进展。最后,对二维范德瓦尔斯材料在红外光探测器领域存在的问题和未来发展方向作了系统总结和展望。

Au/TiO_(2)复合纳米结构增强热电子光电探测器宽谱响应性能

宽谱响应光电探测器在图像传感和光通信等领域应用前景广阔。金属微纳结构通过激发表面等离激元共振效应可高效产生热载流子,将它们与宽带隙半导体构成异质结构,便可利用热载流子开发出低成本宽谱响应光电探测器。研究设计了一种基于Au/TiO_(2)复合纳米结构的热电子光电探测器。其中TiO_(2)层经退火后形成尺度约为百纳米的凹凸结构,Au纳米颗粒层与用作电极的保形Au膜共同组成了激发表面等离激元共振的纳米结构。由于Au/TiO_(2)复合纳米结构的协同作用,该器件在400~900 nm范围内具有宽谱光吸收性能,器件的平均光吸收效率为33.84%。在此基础上,该器件能够探测TiO_(2)本征吸收波段以外的入射光子。例如,在600 nm波长处,器件的响应率为9.67μA/W,线性动态范围为60 dB,器件的上升/下降响应速度分别为1.6 ms和1.5 ms。此外,利用有限元法进行了仿真计算,通过电场分布图验证了Au/TiO_(2)复合纳米结构中所激发的丰富表面等离激元共振效应是其实现宽谱高效探测的原因所在。

Wafer-scale heterogeneous integration of self-powered lead-free metal halide UV photodetectors with ultrahigh stability and homogeneity

Large-scale growth and heterogeneous integration with existing semiconductors are the main obstacles to the application of metal halide perovskites in optoelectronics.Herein,a universal vacuum evaporation strategy is presented to prepare copper halide films with wafer-scale spatial homogeneity.Benefiting from the electric field manipulation method,the built-in electric fields are optimized and further boost the self-powered UV photodetecting performances of common wide-bandgap semiconductors by more than three orders of magnitude.Furthermore,with effective modulation of the interfacial charge dynamics,the as-fabricated GaN-substrate heterojunction photodetector demonstrates an ultrahigh on/off ratio exceeding 107,an impressive responsivity of up to 256 mA W^(-1),and a remarkable detectivity of 2.16×10^(13) Jones at 350 nm,0 V bias.Additionally,the device exhibits an ultrafast response speed(t r/t d=716 ns/1.30 ms),an ultra-narrow photoresponse spectrum with an FWHM of 18 nm and outstanding continuous operational stability as well as long-term stability.Subsequently,a 372-pixel light-powered imaging sensor array with the coefficient of variation of photocurrents reducing to 5.20%is constructed,which demonstrates exceptional electrical homogeneity,operational reliability,and UV imaging capability.This strategy provides an efficient way for large-scale integration of metal halide perovskites with commercial semiconductors for miniature optoelectronic devices.

切割角蓝宝石基氧化镓薄膜MOCVD外延及日盲紫外光电探测器制备

本文使用金属有机物化学气相沉积(MOCVD)法在不同切割角的c面蓝宝石衬底上外延氧化镓(β-Ga_(2)O_(3))单晶薄膜,揭示了衬底切割角对外延薄膜晶体质量的影响规律。研究表明,当衬底切割角为6°时,β-Ga_(2)O_(3)外延膜具有较小的X射线摇摆曲线半峰全宽(1.10°)和最小的表面粗糙度(7.7 nm)。在此基础上,采用光刻、显影、电子束蒸发及剥离工艺制备了金属-半导体-金属结构的日盲紫外光电探测器,器件的光暗电流比为6.2×10^(6),248 nm处的峰值响应度为87.12 A/W,比探测率为3.5×10^(15) Jones,带外抑制比为2.36×10^(4),响应时间为226.2μs。

硅纳米线阵列光电探测器研究进展

硅(Si)作为最重要的半导体材料之一,被广泛应用于太阳电池、光电探测器等光电器件中.由于硅和空气之间的折射率差异,大量的入射光在硅基表面即被反射.为了抑制这种反射带来的损失,多种具有强陷光效应的硅纳米结构被研发出来.采用干法蚀刻方案多数存在成本高昂、制备复杂的问题,而湿法蚀刻方案所制备的硅纳米线阵列则存在间距等参数可控性较低、异质结有效面积较小等问题.聚苯乙烯微球掩膜法可结合干法及湿法蚀刻各自的优点,容易得到周期性硅纳米线(柱)阵列.本文首先概述了硅纳米线结构的性质和制备方法,总结了有效提升硅纳米线(柱)阵列光电探测器性能的策略,并分析了其中存在的问题.进而,讨论了基于硅纳米线(柱)阵列光电探测器的最新进展,重点关注其结构、光敏层的形貌以及提高光电探测器性能参数的方法.最后,简要介绍了其存在的主要问题及可能的解决方案.