ZnS films are deposited by pulsed laser deposition on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. Scanning electron microscope images reveal that the surface...ZnS films are deposited by pulsed laser deposition on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS (111) direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.展开更多
The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by ...The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.展开更多
The NO2 gas sensing behavior of porous silicon(PS) is studied at room temperature with and without ultraviolet(UV) light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a...The NO2 gas sensing behavior of porous silicon(PS) is studied at room temperature with and without ultraviolet(UV) light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p +-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.展开更多
SiC porous ceramics were prepared at 1 400 ℃ for4 h with crystalline silicon cutting waste and activated carbon as main starting materials and NH4HCO3 as the pore-forming agent. Effects of NH4HCO3 additions( 0,20%,30...SiC porous ceramics were prepared at 1 400 ℃ for4 h with crystalline silicon cutting waste and activated carbon as main starting materials and NH4HCO3 as the pore-forming agent. Effects of NH4HCO3 additions( 0,20%,30%,40%,by mass) on the phase composition,microstructure,sintering properties,cold compressive strength and thermal shock resistance of as-prepared Si C porous ceramics were investigated. The results show that:( 1) addition of NH4HCO3 remarkably influences the apparent porosity and cold compressive strength of specimens. The apparent porosity achieves its maximum value( 63. 40%) when 40% NH4HCO3 is added,while the minimum cold compressive strength is 4. 77 MPa;( 2) the specimen with 40% NH4HCO3 has the best thermal shock resistance. The thermal cycling times between1 000 ℃ to room temperature reach 62;( 3) the addition of NH4HCO3 does not remarkably affect the phase composition of the specimens;( 4) the specimens include a large number of SiC particles and a small amount of SiC whiskers.展开更多
We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) fre...We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.展开更多
The silicon nanoporous pillar array (Si-NPA) is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48...The silicon nanoporous pillar array (Si-NPA) is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.展开更多
In this paper, porous silicon/V205 nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and...In this paper, porous silicon/V205 nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope (FESEM), x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), and Raman spectrum (RS). An improved understanding of the growth process of V205 nanorods on PS is presented. The gas sensing properties of samples are measured for NO2 gas of 0.25 ppm-3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO2-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO2, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 rain produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO2 sensing performance of the sample obtained at 600 ℃ for 30 rain probably is due to the strong amplification effect of the heterojunction between PS and V205 and a large number of oxygen vacancies in the nanorods.展开更多
Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation...Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.展开更多
SiC powder was rapidly synthesized in an induction furnace with crystalline silicon cutting waste and active carbon as raw materials,and then SiC porous ceramics were prepared at 1600 t for 4 h with carbon embedded us...SiC powder was rapidly synthesized in an induction furnace with crystalline silicon cutting waste and active carbon as raw materials,and then SiC porous ceramics were prepared at 1600 t for 4 h with carbon embedded using the powder as raw material,the starch and the graphite as pore-forming agents.Effects of additions of different pore-forming agents on the phase composition,microstructures,physical properties,and cold crushing strength of the porous ceramics were investigated.The results show that the main crystalline phases of the synthetic powder areα-S iC(6H-SiC)andβ-SiC(3C-SiC).The phase composition of the porous ceramics includesα-S iC(6H-SiC),β-SiC(3C-SiC),FeSi,quartz and Si2N20.The apparent porosity and closed porosity of the porous ceramics prepared by adding starch are higher,and the cold compressive strength of the porous ceramics added with graphite is higher.As increasing the additions of the starch,the apparent porosity,closed porosity and linear shrinkage ratio of the porous ceramics increase,and the bulk density decreases correspondingly.When 20 mass%starch is added,the apparent porosity,closed porosity,linear shrinkage ratio and cold compressive strength are 57.05%,2.03%,5.10%and 10.20 MPa,respectively.展开更多
Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has dras...Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.展开更多
This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coat...This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.展开更多
Two kinds of porous silicon(PS) were synthesized by magnesiothermic reduction of rice husk silica(RHS) derived from the oxidization of rice husks(RHs). One was obtained from oxidization/reduction at 500 ℃ of th...Two kinds of porous silicon(PS) were synthesized by magnesiothermic reduction of rice husk silica(RHS) derived from the oxidization of rice husks(RHs). One was obtained from oxidization/reduction at 500 ℃ of the unleached RHs, the other was synthesized from oxidization/reduction at 650 ℃ of the acidleached RHs. The structural difference of the above PS was compared: the former had a high pore volume(PV, 0.31 cm3/g) and a large specific surface area(SSA, 45.2 m^2/g), 138 % and 17 % higher than the latter, respectively. As anode materials for lithium ion batteries, the former had reversible capacity of 1 400.7 m Ah/g, 987 m Ah/g lower than the latter; however, after 50 cycles, the former had 64.5 % capacity retention(907 m Ah/g), which was 41.2 % higher than the latter(555.7 m Ah/g). These results showed that the electrochemical performance of PS was significantly affected by its pore structures, and low reduction temperature played the key role in increasing its porosity, and therefore improving its cycling performance.展开更多
Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various ir...Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.展开更多
Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline (PAOABSA), Al/PS-PAOABSA/Au ce...Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline (PAOABSA), Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with soluble polyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifying characteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thickness of the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0x10(4) at +/-3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measured and discussed.展开更多
The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of th...The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier bound exciton in its confined nanostructure.展开更多
We report the current-induced light emission(CILE)at RT from a porous silicon(PS)Schottky device exhibiting good rectifying characteristics with the ideal factor of 14.The photoluminescence spectrum from the PS layer ...We report the current-induced light emission(CILE)at RT from a porous silicon(PS)Schottky device exhibiting good rectifying characteristics with the ideal factor of 14.The photoluminescence spectrum from the PS layer fabricate by laterally anodization peaks at 668 nm.The intensity of CILE increases with increasing current.It has run for more than two hours and still keeps stable.Possible mechanism of CILE is discussed.展开更多
A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron s...A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FFIR) spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.展开更多
A simple but effective doping method, immersion method, was presented. Rare earth complexes [Na3Tb(DPA)3·9H2O and Na3Eu(DPA)3·9H2O] were introduced into porous silicon (PS), where H2DPA is 2,6-dicarbox...A simple but effective doping method, immersion method, was presented. Rare earth complexes [Na3Tb(DPA)3·9H2O and Na3Eu(DPA)3·9H2O] were introduced into porous silicon (PS), where H2DPA is 2,6-dicarboxy pyridine acid. Rare earths were proved to dope into PS effectively by photoluminescence (PL) and X-ray energy dispersive spectroscopy (EDS). And the prepared hybrid samples of PS/RE were found to emit intense room-temperature red and green luminescence while the luminescence of porous silicon are almost thoroughly quenched.展开更多
A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with ...A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity 〉55%. We propose that the conductance mode in the porous silicon membrane with porosities 〉55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤55%, electron flows through a direct continuous channel between nano-crystallites.展开更多
We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film ...We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon (PS) layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy (FESEM), X-ray diffractometer (XRD), and high-resolution transmission electron microscopy (HRTEM). Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.展开更多
基金Supported by the Natural Science Foundation of Shandong Province under Grant No Y2002A09.
文摘ZnS films are deposited by pulsed laser deposition on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS (111) direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.
基金the National Natural Science Foundation of China (No. 69971014) and the Shandong Provincial Natural Science Foundation (No. Y9
文摘The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60771019 and 60801018)the Tianjin Key Research Program of Application Foundation and Advanced Technology,China (Grant No. 11JCZDJC15300)
文摘The NO2 gas sensing behavior of porous silicon(PS) is studied at room temperature with and without ultraviolet(UV) light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p +-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.
文摘SiC porous ceramics were prepared at 1 400 ℃ for4 h with crystalline silicon cutting waste and activated carbon as main starting materials and NH4HCO3 as the pore-forming agent. Effects of NH4HCO3 additions( 0,20%,30%,40%,by mass) on the phase composition,microstructure,sintering properties,cold compressive strength and thermal shock resistance of as-prepared Si C porous ceramics were investigated. The results show that:( 1) addition of NH4HCO3 remarkably influences the apparent porosity and cold compressive strength of specimens. The apparent porosity achieves its maximum value( 63. 40%) when 40% NH4HCO3 is added,while the minimum cold compressive strength is 4. 77 MPa;( 2) the specimen with 40% NH4HCO3 has the best thermal shock resistance. The thermal cycling times between1 000 ℃ to room temperature reach 62;( 3) the addition of NH4HCO3 does not remarkably affect the phase composition of the specimens;( 4) the specimens include a large number of SiC particles and a small amount of SiC whiskers.
基金Project supported by the National Natural Science Foundation of China(Grant No.61627818)the Key Project of Henan Provincial Education Department,China(Grant No.19A510002)+1 种基金the Natural Science Project of the Cultivation Foundation of Henan Provincial Normal University,China(Grant No.2017PL04)the Ph.D.Program of Henan Normal University,China(Grant Nos.5101239170010 and gd17167)。
文摘We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.
基金Supported by the National Natural Science Foundation of China under Grant No 10574112, and the Natural Science Foundation of Henan Province under Grant No 411011800.
文摘The silicon nanoporous pillar array (Si-NPA) is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.61271070,61274074,and 61574100)
文摘In this paper, porous silicon/V205 nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope (FESEM), x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), and Raman spectrum (RS). An improved understanding of the growth process of V205 nanorods on PS is presented. The gas sensing properties of samples are measured for NO2 gas of 0.25 ppm-3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO2-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO2, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 rain produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO2 sensing performance of the sample obtained at 600 ℃ for 30 rain probably is due to the strong amplification effect of the heterojunction between PS and V205 and a large number of oxygen vacancies in the nanorods.
基金The project was supported by the Foundation of Chinese Academy of Sciences.
文摘Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.
文摘SiC powder was rapidly synthesized in an induction furnace with crystalline silicon cutting waste and active carbon as raw materials,and then SiC porous ceramics were prepared at 1600 t for 4 h with carbon embedded using the powder as raw material,the starch and the graphite as pore-forming agents.Effects of additions of different pore-forming agents on the phase composition,microstructures,physical properties,and cold crushing strength of the porous ceramics were investigated.The results show that the main crystalline phases of the synthetic powder areα-S iC(6H-SiC)andβ-SiC(3C-SiC).The phase composition of the porous ceramics includesα-S iC(6H-SiC),β-SiC(3C-SiC),FeSi,quartz and Si2N20.The apparent porosity and closed porosity of the porous ceramics prepared by adding starch are higher,and the cold compressive strength of the porous ceramics added with graphite is higher.As increasing the additions of the starch,the apparent porosity,closed porosity and linear shrinkage ratio of the porous ceramics increase,and the bulk density decreases correspondingly.When 20 mass%starch is added,the apparent porosity,closed porosity,linear shrinkage ratio and cold compressive strength are 57.05%,2.03%,5.10%and 10.20 MPa,respectively.
文摘Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.
文摘This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.
基金Funded by the National Natural Science Foundation of China(No.51264016)the Analysis and Testing Foundation of Kunming University o fScience and Technology,China(No.20140967)
文摘Two kinds of porous silicon(PS) were synthesized by magnesiothermic reduction of rice husk silica(RHS) derived from the oxidization of rice husks(RHs). One was obtained from oxidization/reduction at 500 ℃ of the unleached RHs, the other was synthesized from oxidization/reduction at 650 ℃ of the acidleached RHs. The structural difference of the above PS was compared: the former had a high pore volume(PV, 0.31 cm3/g) and a large specific surface area(SSA, 45.2 m^2/g), 138 % and 17 % higher than the latter, respectively. As anode materials for lithium ion batteries, the former had reversible capacity of 1 400.7 m Ah/g, 987 m Ah/g lower than the latter; however, after 50 cycles, the former had 64.5 % capacity retention(907 m Ah/g), which was 41.2 % higher than the latter(555.7 m Ah/g). These results showed that the electrochemical performance of PS was significantly affected by its pore structures, and low reduction temperature played the key role in increasing its porosity, and therefore improving its cycling performance.
文摘Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.
文摘Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline (PAOABSA), Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with soluble polyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifying characteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thickness of the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0x10(4) at +/-3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measured and discussed.
基金Supported by the National Natural Science Foundation of China(No.2 0 1730 73)
文摘The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier bound exciton in its confined nanostructure.
文摘We report the current-induced light emission(CILE)at RT from a porous silicon(PS)Schottky device exhibiting good rectifying characteristics with the ideal factor of 14.The photoluminescence spectrum from the PS layer fabricate by laterally anodization peaks at 668 nm.The intensity of CILE increases with increasing current.It has run for more than two hours and still keeps stable.Possible mechanism of CILE is discussed.
基金This work was financially supported by the National Natural Science Foundation of China (Nos. 90201025 and 90301002).
文摘A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FFIR) spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.
基金Funded by the Natural Science Foundations of Guangdong Province (No. 06300901),Chinathe Application and Innovation Project of Ministry of Public Security, China(No.2007 YYCXUDST 076)
文摘A simple but effective doping method, immersion method, was presented. Rare earth complexes [Na3Tb(DPA)3·9H2O and Na3Eu(DPA)3·9H2O] were introduced into porous silicon (PS), where H2DPA is 2,6-dicarboxy pyridine acid. Rare earths were proved to dope into PS effectively by photoluminescence (PL) and X-ray energy dispersive spectroscopy (EDS). And the prepared hybrid samples of PS/RE were found to emit intense room-temperature red and green luminescence while the luminescence of porous silicon are almost thoroughly quenched.
文摘A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity 〉55%. We propose that the conductance mode in the porous silicon membrane with porosities 〉55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤55%, electron flows through a direct continuous channel between nano-crystallites.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271070,61274074,and 60771019)the Key Research Program of Application Foundation and Advanced Technology of Tianjin,China(Grant No.11JCZDJC15300)
文摘We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon (PS) layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy (FESEM), X-ray diffractometer (XRD), and high-resolution transmission electron microscopy (HRTEM). Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.