The diffusion bonding was carried out to join Ti alloy （Ti-6Al-4V） and tin-bronze （ ZQSn10-10 ） with Ni and Ni ＋ Cu interlayer. The microstructures of the diffusion bonded joints were analyzed by scanning electr...The diffusion bonding was carried out to join Ti alloy （Ti-6Al-4V） and tin-bronze （ ZQSn10-10 ） with Ni and Ni ＋ Cu interlayer. The microstructures of the diffusion bonded joints were analyzed by scanning electron microscope （SEM）, energy dispersive spectroscopy （ EDS ） and X-ray diffraction （ XRD ）. The results show that when the interlayer is Ni or Ni ＋ Cu transition metals both could effectively prevent the diffusion between Ti and Cu and avoid the formation of the Cu-Ti intermetallic compounds （Cu3Ti, CuTi etc. ）. But the Ni-Ti intermetallic compounds （NiTi, Ni3Ti） are formed on the Ti-6Al-4V/Ni interface. When the interlayer is Ni, the optimum bonding parameters are 830 ℃/10 MPa/30 min. And when the interlayer is Ni ＋ Cu, the optimum bonding parameters are 850 ℃/10 MPa/20 min. With the optimum bonding parameters, the tensile strength of the joints with Ni and Ni ＋ Cu interlayer both are 155.8 MPa, which is 65 percent of the strength of ZQSn10-10 base metal.展开更多
The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.展开更多
Two-dimensional transition metal dichalcogenides（TMDs） have attracted extensive attention due to their many novel properties.The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds,...Two-dimensional transition metal dichalcogenides（TMDs） have attracted extensive attention due to their many novel properties.The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds,while van der Waals interactions combine the layers together.This makes its lattice dynamics layer-number dependent.The evolutions of ultralow frequency（〈 50 cm^（-1）） modes,such as shear and layer-breathing modes have been well-established.Here,we review the layer-number dependent high-frequency（〉 50 cm^（-1）） vibration modes in few-layer TMDs and demonstrate how the interlayer coupling leads to the splitting of high-frequency vibration modes,known as Davydov splitting.Such Davydov splitting can be well described by a van der Waals model,which directly links the splitting with the interlayer coupling.Our review expands the understanding on the effect of interlayer coupling on the high-frequency vibration modes in TMDs and other two-dimensional materials.展开更多
基金The work was supported by National Natural Science Foundation of China(No50375065)State Key Laboratory of Advanced Welding Production Technology(No04005)
文摘The diffusion bonding was carried out to join Ti alloy （Ti-6Al-4V） and tin-bronze （ ZQSn10-10 ） with Ni and Ni ＋ Cu interlayer. The microstructures of the diffusion bonded joints were analyzed by scanning electron microscope （SEM）, energy dispersive spectroscopy （ EDS ） and X-ray diffraction （ XRD ）. The results show that when the interlayer is Ni or Ni ＋ Cu transition metals both could effectively prevent the diffusion between Ti and Cu and avoid the formation of the Cu-Ti intermetallic compounds （Cu3Ti, CuTi etc. ）. But the Ni-Ti intermetallic compounds （NiTi, Ni3Ti） are formed on the Ti-6Al-4V/Ni interface. When the interlayer is Ni, the optimum bonding parameters are 830 ℃/10 MPa/30 min. And when the interlayer is Ni ＋ Cu, the optimum bonding parameters are 850 ℃/10 MPa/20 min. With the optimum bonding parameters, the tensile strength of the joints with Ni and Ni ＋ Cu interlayer both are 155.8 MPa, which is 65 percent of the strength of ZQSn10-10 base metal.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108the Fundamental Research Funds for the Central Universities under Grant No JB141101the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
文摘The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.
基金Project supported by the National Basic Research Program of China(No.2016YFA0301200)the National Natural Science Foundation of China(Nos.11225421,11474277,11434010,61474067,11604326,11574305 and 51527901)the National Young 1000 Talent Plan of China
文摘Two-dimensional transition metal dichalcogenides（TMDs） have attracted extensive attention due to their many novel properties.The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds,while van der Waals interactions combine the layers together.This makes its lattice dynamics layer-number dependent.The evolutions of ultralow frequency（〈 50 cm^（-1）） modes,such as shear and layer-breathing modes have been well-established.Here,we review the layer-number dependent high-frequency（〉 50 cm^（-1）） vibration modes in few-layer TMDs and demonstrate how the interlayer coupling leads to the splitting of high-frequency vibration modes,known as Davydov splitting.Such Davydov splitting can be well described by a van der Waals model,which directly links the splitting with the interlayer coupling.Our review expands the understanding on the effect of interlayer coupling on the high-frequency vibration modes in TMDs and other two-dimensional materials.
