Fabrication of tungsten films by metallorganic chemical vapor deposition

Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition （MOCVD）. The chemi-cal purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and four-point probe method. It is found that the films deposited at 460°C are metastable β-W with （211） orientation and can change into α-W when an-nealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.

Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition

The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.

Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition

Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.

DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors

Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.

Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth

Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires （NWs） are grown by metal organic chemical vapor deposition on GaAs（111） B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector.

High power red-light GalnP/AlGalnP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes （LDs） was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition （LP-MOCVD） technique. In order to improve the catastrophic optical damage （COD） level of devices, a nonabsorbing window （NAW）, which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520. 540, and 580 ℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 ℃. When the blue shift was 24.7 meV at 480 ℃, the COD power for the window LD was 86.7% higher than the conventional LD.

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition （MOCVD） are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off （LLO） technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm^2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy （SEM） combined with energy dispersive X-ray spectrometer （EDS） measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy （AFM） and photoluminescence （PL） measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.

High-strain InGaAs/GaAs quantum well grown by MOCVD

High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.

Metamorphic In_(0.53)Ga_(0.47)As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.

Fabrication of low threshold current monolithic DFB laser with an MMI combiner

We fabricate low threshold current monolithic distributed feedback（DFB） laser with a multi-mode interface（MMI） combiner using butt-joint metal-organic chemical vapor deposition technology with different waveguide structures. Multi-layer mask self-aligned photolithography technology is used to form different waveguides in active and passive regions, respectively. The result shows that the laser threshold current is lower than 10 m A, with 50 d B side-mode suppression ratio.

Influence of annealing on the structural,optical and electrical properties of indium oxide films deposited on c-sapphire substrate

Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.

Preparation and characterization of In_(0.82)Ga_(0.18)As PIN photodetectors

Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.

Experimental study of mode characteristics for equilateral triangle semiconductor microcavities

Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 um. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.