Ultrahigh performance passive radiative cooling by hybrid polar dielectric metasurface thermal emitters

Real-world passive radiative cooling requires highly emissive,selective,and omnidirectional thermal emitters to maintain the radiative cooler at a certain temperature below the ambient temperature while maximizing the net cooling power.Despite various selective thermal emitters have been demonstrated,it is still challenging to achieve these conditions sim-ultaneously because of the extreme difficulty in controlling thermal emission of photonic structures in multidimension.Here we demonstrated hybrid polar dielectric metasurface thermal emitters with machine learning inverse design,en-abling a high emissivity of~0.92 within the atmospheric transparency window 8-13μm,a large spectral selectivity of~1.8 and a wide emission angle up to 80 degrees,simultaneously.This selective and omnidirectional thermal emitter has led to a new record of temperature reduction as large as~15.4°C under strong solar irradiation of~800 W/m2,signific-antly surpassing the state-of-the-art results.The designed structures also show great potential in tackling the urban heat island effect,with modelling results suggesting a large energy saving and deployment area reduction.This research will make significant impact on passive radiative cooling,thermal energy photonics and tackling global climate change.

Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing （RTP） approach to create an emitter layer of heterojunction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

High Efficiency and Stable Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter

High efficiency, stable organic light-emitting diodes （OLEDs） based on 2-pheyl-4＇-carbazole-9-H-Thioxanthen-9- one-10, 10-dioxide （TXO-PhCz） with different doping concentration are constructed. The stability of the encap- sulated devices are investigated in detail. The devices with the 10 wt% doped TXO-PhCz emitter layer （EML） show the best performance with a current efficiency of 52.1 cd/A, a power efficiency of 32.71re^W, and an external quantum efficiency （EQE） of 17.7%. The devices based on the lOwt%-doped TXO-PhCz EML show the best operational stability with a half-life time （LTSO） of 8Oh, which is 8 h longer than that of the reference devices based on fac-tris（2-phenylpyridinato）iridium（ Ⅲ） （Ir（ppy）a）. These indicate excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability. The high-performance device based on TXO-PhCz with high stability can be further improved by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.

Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers

We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.

Thickness Dependence of Structural and Optical Properties of Chromium Thin Films as an Infrared Reflector for Solar-thermal Conversion Applications

The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.

A method to measure the nonlinear force caused emittance growth in a RF photoinjector

Based on the multi-slit method, a new method is introduced to measure the nonlinear force caused emittance growth in a RF photoinjector. It is possible to reconstruct the phase space of a beam under some conditions by the multi-slit method. Based on the reconstructed phase space, besides the emittance, the emittance growth from the distortion of the phase space can also be measured. The emittance growth results from the effects of nonlinear force acting on electron, which is very important for the high quality beam in a RF photoinjector.

基于电介质超材料的中红外超窄带吸波器

电介质超材料因具有极低欧姆损耗受到广泛关注.提出一种基于电介质超材料的中红外超窄带吸波器,该吸波器由顶层电介质微结构、中间层电介质膜和基底金属构成.研究结果表明:该吸波器在中红外波段存在带宽为2.40nm的吸收峰;电场主要分布于顶层硅微结构之间的间隙,导致吸收损耗功率显著降低,进而实现吸收带宽压缩;作为传感器时,在中红外波段该吸波器的品质因数可达80.可见,该吸波器可应用于中红外热辐射光源和高性能传感器.

基于邻苯二甲酰亚胺受体热活化延迟荧光发射体的异构体效应

设计合成了3-CzAIAd和3-DPFCzAIAd两种新型热活化延迟荧光(TADF)发射体,并与其异构体4-CzAIAd和4-DPFCzAIAd进行了对比研究。咔唑单元的取代位置显著影响着发射体的光物理性质和发光器件性能。同4号位取代的化合物相比,在3号位取代的相应的发射体表现出较高的三线态能级、较小的Δ_(EST)和荧光量子效率以及相对红移的发光光谱。基于3-DPFCzAIAd的器件展现出20.8%的最大外量子效率、57.1 cd·A^(-1)的最大电流效率和长达260 h的半寿命@500 cd·m^(-2),而4-DPFCzAIAd对应的发光器件虽然表现出28.2%的最大外量子效率,但半寿命@500 cd·m^(-2)缩短为178 h,效率滚降更大,达到77%。

基于稳态集-射极饱和电压的IGBT功率模块疲劳失效模型的研究

随着绝缘栅双极型晶体管(insulated gate bipolar transistor, IGBT)功率模块在民用和军用领域应用的不断深入,IGBT功率模块在长时间电-热应力下的疲劳老化问题越来越突出。本文基于半导体物理和器件可靠性理论,研究IGBT功率模块封装失效的产生原因,分析焊料层和键丝失效的作用机理和表现特征。在研究IGBT通态电压模型的基础上,提出了一种基于稳态集-射极饱和电压的IGBT功率模块疲劳老化模型,实现对焊料层疲劳和键丝疲劳等封装老化问题的综合表征。搭建IGBT功率模块的电-热老化实验测试平台,进行了功率循环老化实验验证,结果表明本文模型可以较为准确地评估IGBT功率模块封装的疲劳老化程度。

Thin paints for durable and scalable radiative cooling

Passive daytime radiative cooling(PDRC) is environment-friendly without energy input by enhancing the coating's solar reflectance(R_(solar)) and thermal emittance(ε_(LWIR)) in the atmosphere's long-wave infrared transmission window.However,high R_(solar) is usually achieved by increasing the coating's thickness,which not only increases materials' cost but also impairs heat transfer.Additionally,the desired high R_(solar) is vulnerable to dust pollution in the outdoors.In this work,a thin paint was designed by mixing hBN plates,PFOTS,and IPA. R_(solar)=0.963 and ε_(LWIR)=0.927 was achieved at a thickness of 150 μm due to the high backscattering ability of scatters.A high through-plane thermal conductivity(~1.82 W m^(-1) K^(-1)) also can be obtained.In addition,the porous structure coupled with the binder PFOTS resulted in a contact angle of 154°,demonstrating excellent durability under dust contamination.Outdoor experiments showed that the thin paint can obtain a 2.3℃ lower temperature for sub-ambient cooling than the reference PDRC coating in the daytime.Furtherly,the above-ambient heat dissipation performance can be enhanced by spraying the thin paint on a 3D heat sink,which was 15.7℃ lower than the reference 1D structure,demonstrating excellent performance for durable and scalable PDRC applications.

Electrically-driven ultrafast out-of-equilibrium light emission from hot electrons in suspended graphene/hBN heterostructures

Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals forces.However,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional semiconductors.Here,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)heterostructures.Electrons in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral range.By eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or hBN.Wefurther demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal equilibrium.Direct cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical excitation.It is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal radiation.The demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulators.

Control over emissivity of zero-static-power thermal emitters based on phase-changing material GST

Controlling the emissivity of a thermal emitter has attracted growing interest,with a view toward a new generation of thermal emission devices.To date,all demonstrations have involved using sustained external electric or thermal consumption to maintain a desired emissivity.In the present study,we demonstrated control over the emissivity of a thermal emitter consisting of a film of phase-changing material Ge2Sb2Te5(GST)on top of a metal film.This thermal emitter achieves broad wavelength-selective spectral emissivity in the mid-infrared.The peak emissivity approaches the ideal blackbody maximum,and a maximum extinction ratio of 410 dB is attainable by switching the GST between the crystalline and amorphous phases.By controlling the intermediate phases,the emissivity can be continuously tuned.This switchable,tunable,wavelength-selective and thermally stable thermal emitter will pave the way toward the ultimate control of thermal emissivity in the field of fundamental science as well as for energy harvesting and thermal control applications,including thermophotovoltaics,light sources,infrared imaging and radiative coolers.

Multiband metamaterial emitters for infrared and laser compatible stealth with thermal management based on dissipative dielectrics

The modulation of thermal radiation in the infrared region is a highly anticipated method to achieve infrared sensing and camouflage. Here, a multiband metamaterial emitter based on the Al∕SiO_(2)∕Al nanosandwich structure is proposed to provide new ideas for effective infrared and laser-compatible camouflage. By virtue of the intrinsic absorption and magnetic resonance property of lossy materials, the thermal radiation in the infrared region can be rationally modulated. The fabricated samples generally present low emissivity(ε_(3–5μm)= 0.21,ε_(8–14μm)= 0.19) in the atmospheric windows to evade infrared detection as well as high emissivity(ε_(5–8μm)= 0.43) in the undetected band for energy dissipation. Additionally, the laser camouflage is also realized by introducing a strong absorption at 10.6 μm through the nonlocalized plasmon resonance of the SiO_(2)layer.Moreover, the fabricated emitter shows promising prospects in thermal management due to the good radiative cooling property that is comparable to the metallic Al material. This work demonstrates a multiband emitter based on the metasurface structure with compatible infrared-laser camouflage as well as radiative cooling properties, which is expected to pave new routes for the design of thermal radiation devices.

Metamaterial-based graphene thermal emitter

A thermal emitter composed of a frequency-selective surface metamaterial layer and a hexagonal boron nitride-encapsulated graphene filament is demonstrated. The broadband thermal emission of the metamaterial （consisting of ring resonators） was tailored into two discrete bands, and the measured reflection and emission spectra agreed well with the simulation results. The high modulation frequencies that can be obtained in these devices, coupled with their operation in air, confirm their feasibility for use in applications such as gas sensing.

Design study of charge-stripping scheme of heavy ion beams for HIAF-BRing

Charge strippers play an essential role in heavy-ion accelerators by stripping the projectile ions to higher charge states to enhance the acceleration efficiency downstream of the stripper.In the high-energy mode of the booster ring(BRing)of the high-intensity heavy-ion accelerator facility,the pre-accelerated ions from the iLinac will be stripped by a carbon foil to higher charge states and then injected into the BRing.The key parameters of the stripper and stripped ions were calculated,and the influence of stripping on the beam quality was discussed.To get high stripping efficiencies,the foil thicknesses and resultant charge state distributions for the typical ions were determined by the code ETACHA.The equilibrium thickness was obtained for the U beam,while the stripper thicknesses for the Xe and Kr beams were determined based on a compromise between the stripped charge states and the stripping efficiency.The energy loss,energy straggling,and emittance growth due to stripping have a non-negligible impact on the transport of the stripped beams and the injection of the ring.Therefore,these parameters were simulated by GEANT4.In addition,the foil’s temperature evolution,which greatly affects the foil lifetime,was simulated by ANSYS.The maximum temperature of the foil bombarded by the U and Xe beams with the nominal parameters will exceed the safe value in terms of the impact of evaporation on the foil’s lifetime.Given the foil temperature constraint,the highest tolerable beam intensity and the injected ion number into the ring were derived for different beam sizes.The results of this paper will present important reference data for the optimization design and commissioning of the beamline and injection to the BRing for the stripped ions.

New electron-donating segment to develop thermally activated delayed fluorescence emitters for efficient solution-processed non-doped organic light-emitting diodes

Thermally activated delayed fluorescent(TADF) materials capable of efficient solution-processed nondoped organic light-emitting diodes(OLEDs) are of important and practical significance for further development of OLEDs. In this work, a new electron-donating segment, 2,7-di(9 H-carbazol-9-yl)-9,9-dimethyl-9,10-dihydroacridine(2 Cz-DMAC), was designed to develop solution-processable non-doped TADF emitters. 2 Cz-DMAC can not only simultaneously increase the solubility of compounds and suppress harmful aggregation-caused quenching, but also efficiently broaden the delocalization of the highest occupied molecular orbital and promote the reverse intersystem crossing process. Three new TADF emitters, 2-(2,7-di(9 H-carbazol-9-yl)-9,9-dimethylacridin-10(9 H)-yl)dibenzo[b,d]thiophene 5,5-dioxide(2 Cz-DMAC-BTB), 2-(2,7-di(9 H-carbazol-9-yl)-9,9-dimethylacridin-10(9 H)-yl)-9 H-thioxanthen-9-one(2 Cz-DMAC-TXO), 2-(2,7-di(9 H-carbazol-9-yl)-9,9-dimethylacridin-10(9 H)-yl)thianthrene 5,5,10,10-tetraoxide(2 Cz-DMAC-TTR), were developed by using 2 Cz-DMAC segment as the electron-donor. As anticipated, the solution-processed non-doped OLEDs employing 2 Cz-DMAC-BTB, 2 Cz-DMAC-TXO and 2 CzDMAC-TTR as the emitters respectively exhibited green, orange and red emissions with maximum external quantum efficiencies of 14.0%, 6.6% and 2.9%. These results successfully demonstrate the feasibility and convenience of developing efficient solution-processable non-doped TADF emitters based on 2 CzDMAC segment.

Phosphonium-Based Ionic Thermally Activated Delayed Fluorescence Emitters for High-Performance Partially Solution-Processed Organic Light-Emitting Diodes

Ionic thermally activated delayed fluorescence(TADF)emitters are rarely investigated due to their poor photoluminescence and electroluminescence performance.Herein,highly efficient ionic TADF emitters with charged donor–acceptor(D–A^(+))and D–A^(+)–D architectures are designed,innovatively based on the phosphonium cation electron acceptor.The symmetric D–A^(+)–D compound in doped film exhibits a high photoluminescence quantum yield of 0.91 and a short emission lifetime of 1.43 microseconds.Partially solution-processed organic lightemitting diodes based on these ionic TADF emitters achieve a maximum external quantum efficiency(EQE)of 18.3%and a peak luminance of 14,532 candelas per square meter(cd/m^(2))and show a small efficiency roll-off of 7.1%(EQE=17%)at a practical high luminance of 1000 cd/m^(2).These results demonstrate the high potential of phosphonium cations as promising electron acceptors to construct TADF emitters for high-performance electroluminescence devices.The current study opens up an appealing way for future exploitation of high-efficiency ionic TADF materials.

基于表面等离激元的新型碲化铯光阴极研究

目前已有研究将表面等离极化激元(SPPs)引入铜阴极和锑钾铯光阴极中,大幅提高其量子效率。碲化铯(Cs_(2)Te)光阴极是一种极佳的在紫外频段可应用于中高平均流强的光阴极材料,而常用贵金属介电函数在紫外频段过低无法满足SPPs激发要求。本研究通过微纳光栅结构将SPPs引入Cs_(2)Te光阴极,形成局域增强场以提高光子吸收率,并调节光电子初始激发分布。为探索SPPs对Cs_(2)Te光阴极性能的影响,使用蒙特卡罗方法模拟引入SPPs前后光阴极的光电发射过程。结果表明,引入SPPs会导致光电子数量增加,从而显著提高Cs_(2)Te光阴极的量子效率约60%,且增加的光电子大多数分布于深层界面附近,在逃逸过程中各类碰撞概率增加,使发射度基本保持不变。

航天器用铝光亮阳极氧化涂层特性研究

铝光亮阳极氧化涂层是一种重要的航天器热控制材料.本文对硫酸电解液铝阳极氧化工艺进行了较系统的研究,发现抛光时间、阳极氧化电压、电解液温度和涂层的膜厚等对涂层光学性能有重要的影响:适度抛光可以提高涂层的太阳反射率,提高氧化电压和电解液温度可以显著增加涂层的红外发射率,膜厚对红外发射率影响较大而对太阳吸收影响并不明显.在最优工艺条件下(10V、20℃)可以制备出性能优异的铝光亮阳极氧化热控涂层.

多发射极指分段结构功率SiGe HBT的热分析

提出了一种有效的方法—采用多发射极指分段结构来增强功率SiGe HBT的热稳定性。为了对分段结构进行精确的热分析,针对器件多层结构的特点,建立起适当的热模型,模型中充分考虑了各个部分的热阻。根据此热模型,使用有限元方法,对一个十指的分段结构功率SiGe HBT进行了热模拟。考虑到模拟的精确性及软件的功能限制,采用两步模拟法:衬底模拟和有源区模拟。通过模拟,得到了发射极指的三维温度分布。结果表明,分段结构功率HBT的最高结温和热阻都明显低于完整发射极指结构,新结构有效地提高了器件的热稳定性。