The superior drainage was pre-treated by biologic contact oxidation on BOD5 load of 0.72 kg/(m3·d),and then post-treated by constructed wetland. The results about the effect on the constructed wetland post-treatm...The superior drainage was pre-treated by biologic contact oxidation on BOD5 load of 0.72 kg/(m3·d),and then post-treated by constructed wetland. The results about the effect on the constructed wetland post-treatment show that the total nitrogen (TN) is the restrictive index of the combinational technique treatment effect. To meet the reclaimed water quality standard and reuse for waterscape,the peak hydraulic load of constructed wetland is 0.50 m/d in summer (30-36 ℃) and 0.33 m/d in winter (8-12℃),and the load ratio of the peak hydraulic under the two temperature conditions is 3-2. The results are combined of reclaimed water quantity requirements in different seasons of green building. Reasonable scale of the reclaimed water treatment systems can be determined. The treatment efficacy can be well predicted,and both the design and operations can be effectively guided,by which the reclaimed water treatment systems regard superior drainage as the source and are purified by combinational technique of contact oxidation and artificial wetland.展开更多
The oxidation properties of silver alloy powders and microstructures of oxidized powders have been investigated by thermo gravity analysis(TGA), scanning electron microscopy(SEM) and wave dispersive X ray spectrosco...The oxidation properties of silver alloy powders and microstructures of oxidized powders have been investigated by thermo gravity analysis(TGA), scanning electron microscopy(SEM) and wave dispersive X ray spectroscopy(WDEX). Ag Sn RE alloy powders have been oxidized completely at 610 ℃ within 60 min, with an external pure silver scale forming around each oxidized particle. It is useful to produce electrical contact composites. The excellent oxidation properties of Ag Sn RE alloy powders are attributed to the ideal microstructure of the oxidized powders.展开更多
Cu with and without La addition was prepared and the effect of a trace amount of La on the arc erosion behaviors and oxidation resistance of Cu alloys was investigated. The results indicate that CuLa alloy exhibits su...Cu with and without La addition was prepared and the effect of a trace amount of La on the arc erosion behaviors and oxidation resistance of Cu alloys was investigated. The results indicate that CuLa alloy exhibits superior oxidation resistance and arc erosion resistance. The contact resistance and temperature rise were obviously improved. The oxidation resistance of CuLa alloy mainly is due to the interface wrapping of La2O3 particles and CuLa alloy phase on Cu atoms. Thermodynamic calculation indicated that La2O3 could form preferentially in the CuLa alloy, which was beneficial for the protection of the Cu substrate. According to kinetics analysis, the activation energy of CuLa alloy was higher than that of pure Cu, indicating the better oxidation resistance of CuLa alloys.展开更多
The technique of micro-electrolysis-contact oxidization was exploited to treat chitin-producing wastewater. Results showed that Fe-C micro-electrolysis can remove about 30% CODcr, raise pH from 0.7 to 5.5. The CODcr r...The technique of micro-electrolysis-contact oxidization was exploited to treat chitin-producing wastewater. Results showed that Fe-C micro-electrolysis can remove about 30% CODcr, raise pH from 0.7 to 5.5. The CODcr removal efficiency by biochemical process can be more than 80%. During a half year抯 operation, the whole system worked very stably and had good results, as proved by the fact that every quality indicator of effluent met the expected discharge stan-dards; which means that chitin wastewater can be treated by the technique of micro-electrolysis, contact oxidization.展开更多
Constituents of the oxidized surface film on diamond particles reinforced Cu-Cd alloy matrix composite （Cp/Cu-Cd） were investigated by XPS. The results show that Cu2O is the main constituent when the oxidized film i...Constituents of the oxidized surface film on diamond particles reinforced Cu-Cd alloy matrix composite （Cp/Cu-Cd） were investigated by XPS. The results show that Cu2O is the main constituent when the oxidized film is thin; CuO appears only after the film is rather thick. The originally formed oxidized film on the Cp/Cu-Cd is about 10nm in thickness and is mainly composed of Cu2O and Cu. After oxidized at 120℃ over 30h, CuO is detected in the film.展开更多
Contact glow discharge electrolysis (CGDE) of o-chlorophenol (2-CP) was investigated under different pH, voltages and initial concentrations. And the mechanism of the oxidation was explored. The results suggested that...Contact glow discharge electrolysis (CGDE) of o-chlorophenol (2-CP) was investigated under different pH, voltages and initial concentrations. And the mechanism of the oxidation was explored. The results suggested that the degradation followed the first order kinetic law; Fe2+ had a remarkable catalytic effect on the removal rate of o-chloropenol. In the presence of Fe2+, 2-CP underwent an exhaustive degradation, from which the major intermediates included o-dihydroxybenze, p-hydroxybenze, p-benzoquione and carboxlic acids.展开更多
The dark oxidation reactions of ethers including aether, isopropyl ether, phenyl isopropyl ether, and benzyl isopropyl ether have been studied by using density functional theory calculations. The structures of initial...The dark oxidation reactions of ethers including aether, isopropyl ether, phenyl isopropyl ether, and benzyl isopropyl ether have been studied by using density functional theory calculations. The structures of initial Contact charge transfer complexes （CCTCs）, transition states and caged radical intermediates have been located at the B3LYP/6-31G （d） level, The bonding nature of ethers with triplet 02 in CCTCs has been analyzed, and the detailed mechanism of dark oxidation reactions of ether is presented clearly.展开更多
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ...This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts展开更多
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transist...In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.展开更多
Recently, high heat density has become a problem in electronic devices. Therefore, high heat-transfer efficiency is required in copper heat exchangers. Improvement ofwettability is reported to improve the heat-transfe...Recently, high heat density has become a problem in electronic devices. Therefore, high heat-transfer efficiency is required in copper heat exchangers. Improvement ofwettability is reported to improve the heat-transfer efficiency. In previous studies, copper oxide layer improves the wettability. In this study, we focus on a copper oxide layer produced under warm conditions （from 200 to 300 ℃）, which are suitable oxidation conditions for improving wettability. Experimental results showed that the surface of the specimens was covered by the oxidation layer and took on a black color. Furthermore, the wettability was improved by the warm copper oxide layer. While, the surface roughness was approximately constant to each warm oxidized specimen. Whereat, the warm oxide layer was observed by SEM （sanning electron microscope）. The results from SEM observations showed that the warm copper oxide layer consisted of stacks and combinations of nanoscopic warm oxidation particles. Thus, the warm oxidation layer has nanoscopic surface asperities. It is seemed that these nanoscopic asperities improved the wettability.展开更多
The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical performance.Among them,orthorhombic tin-selenide(S...The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical performance.Among them,orthorhombic tin-selenide(SnSe)has garnered increasing attention due to its potential applications in a variety of electronic,optoelectronic,and thermoelectric devices.However,the realization of high-performance SnSe FETs with low contact resistance(Rc)remains a challenge.Herein,we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals.It is found that chromium(Cr)-contacted devices possess the best FET performance,such as electron mobility up to 606 cm^(2)/(V·s)at 78 K,current on/off ratio exceeding 1010,and saturation current of~550μA/μm,where a negligible Schottky barrier(SB)of~30 meV and a low contact resistance of~425Ωμm are achieved.X-ray photoelectron spectroscopy(XPS)and cross-sectional electron dispersive X-ray spectroscopy(EDX)results further reveal that the improved contact arises from the Cr-induced reduction of native oxide(SnOx)to Sn,which thins the tunneling barrier for efficient electron injection.Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.展开更多
基金Project(SWITCH018530) supported by the EU Sixth Framework Program-Sustainable Water management Improves Tomorrow’s CitiesProject(2008DFA91770) supported by the International Cooperation Items of the Ministry of Science and Technology,China
文摘The superior drainage was pre-treated by biologic contact oxidation on BOD5 load of 0.72 kg/(m3·d),and then post-treated by constructed wetland. The results about the effect on the constructed wetland post-treatment show that the total nitrogen (TN) is the restrictive index of the combinational technique treatment effect. To meet the reclaimed water quality standard and reuse for waterscape,the peak hydraulic load of constructed wetland is 0.50 m/d in summer (30-36 ℃) and 0.33 m/d in winter (8-12℃),and the load ratio of the peak hydraulic under the two temperature conditions is 3-2. The results are combined of reclaimed water quantity requirements in different seasons of green building. Reasonable scale of the reclaimed water treatment systems can be determined. The treatment efficacy can be well predicted,and both the design and operations can be effectively guided,by which the reclaimed water treatment systems regard superior drainage as the source and are purified by combinational technique of contact oxidation and artificial wetland.
文摘The oxidation properties of silver alloy powders and microstructures of oxidized powders have been investigated by thermo gravity analysis(TGA), scanning electron microscopy(SEM) and wave dispersive X ray spectroscopy(WDEX). Ag Sn RE alloy powders have been oxidized completely at 610 ℃ within 60 min, with an external pure silver scale forming around each oxidized particle. It is useful to produce electrical contact composites. The excellent oxidation properties of Ag Sn RE alloy powders are attributed to the ideal microstructure of the oxidized powders.
基金Project(51171146)supported by the National Natural Science Foundation of China
文摘Cu with and without La addition was prepared and the effect of a trace amount of La on the arc erosion behaviors and oxidation resistance of Cu alloys was investigated. The results indicate that CuLa alloy exhibits superior oxidation resistance and arc erosion resistance. The contact resistance and temperature rise were obviously improved. The oxidation resistance of CuLa alloy mainly is due to the interface wrapping of La2O3 particles and CuLa alloy phase on Cu atoms. Thermodynamic calculation indicated that La2O3 could form preferentially in the CuLa alloy, which was beneficial for the protection of the Cu substrate. According to kinetics analysis, the activation energy of CuLa alloy was higher than that of pure Cu, indicating the better oxidation resistance of CuLa alloys.
文摘The technique of micro-electrolysis-contact oxidization was exploited to treat chitin-producing wastewater. Results showed that Fe-C micro-electrolysis can remove about 30% CODcr, raise pH from 0.7 to 5.5. The CODcr removal efficiency by biochemical process can be more than 80%. During a half year抯 operation, the whole system worked very stably and had good results, as proved by the fact that every quality indicator of effluent met the expected discharge stan-dards; which means that chitin wastewater can be treated by the technique of micro-electrolysis, contact oxidization.
文摘Constituents of the oxidized surface film on diamond particles reinforced Cu-Cd alloy matrix composite （Cp/Cu-Cd） were investigated by XPS. The results show that Cu2O is the main constituent when the oxidized film is thin; CuO appears only after the film is rather thick. The originally formed oxidized film on the Cp/Cu-Cd is about 10nm in thickness and is mainly composed of Cu2O and Cu. After oxidized at 120℃ over 30h, CuO is detected in the film.
基金The project supported by the Key Project of Science and Technology from the Ministry of Education China (No. 00250) the project of KJCXGC-01 of Northwest Normal University, China
文摘Contact glow discharge electrolysis (CGDE) of o-chlorophenol (2-CP) was investigated under different pH, voltages and initial concentrations. And the mechanism of the oxidation was explored. The results suggested that the degradation followed the first order kinetic law; Fe2+ had a remarkable catalytic effect on the removal rate of o-chloropenol. In the presence of Fe2+, 2-CP underwent an exhaustive degradation, from which the major intermediates included o-dihydroxybenze, p-hydroxybenze, p-benzoquione and carboxlic acids.
基金Project supported by the National Natural Science Foundation of China (No. 20473047) and the Major State Basic Research Development Program of China (973 Program, No. 2004CB719902)
文摘The dark oxidation reactions of ethers including aether, isopropyl ether, phenyl isopropyl ether, and benzyl isopropyl ether have been studied by using density functional theory calculations. The structures of initial Contact charge transfer complexes （CCTCs）, transition states and caged radical intermediates have been located at the B3LYP/6-31G （d） level, The bonding nature of ethers with triplet 02 in CCTCs has been analyzed, and the detailed mechanism of dark oxidation reactions of ether is presented clearly.
基金Project supported by Science and Technology Planning Project of Guangdong Province (Grant No. 2007A010501008)the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No. 2009B090300338)
文摘This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts
基金Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.021014380033)
文摘In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
文摘Recently, high heat density has become a problem in electronic devices. Therefore, high heat-transfer efficiency is required in copper heat exchangers. Improvement ofwettability is reported to improve the heat-transfer efficiency. In previous studies, copper oxide layer improves the wettability. In this study, we focus on a copper oxide layer produced under warm conditions （from 200 to 300 ℃）, which are suitable oxidation conditions for improving wettability. Experimental results showed that the surface of the specimens was covered by the oxidation layer and took on a black color. Furthermore, the wettability was improved by the warm copper oxide layer. While, the surface roughness was approximately constant to each warm oxidized specimen. Whereat, the warm oxide layer was observed by SEM （sanning electron microscope）. The results from SEM observations showed that the warm copper oxide layer consisted of stacks and combinations of nanoscopic warm oxidation particles. Thus, the warm oxidation layer has nanoscopic surface asperities. It is seemed that these nanoscopic asperities improved the wettability.
基金support from the National Natural Science Foundation of China(Nos.62004128 and 61874074)the Fundamental Research Foundation of Shenzhen(No.JCYJ20190808152607389)+1 种基金the Science and Technology Project of Shenzhen(No.JCYJ20220531100815034)H.N.L.acknowledges the Guangdong Basic and Applied Basic Research Foundation(No.2022A1515012055).
文摘The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical performance.Among them,orthorhombic tin-selenide(SnSe)has garnered increasing attention due to its potential applications in a variety of electronic,optoelectronic,and thermoelectric devices.However,the realization of high-performance SnSe FETs with low contact resistance(Rc)remains a challenge.Herein,we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals.It is found that chromium(Cr)-contacted devices possess the best FET performance,such as electron mobility up to 606 cm^(2)/(V·s)at 78 K,current on/off ratio exceeding 1010,and saturation current of~550μA/μm,where a negligible Schottky barrier(SB)of~30 meV and a low contact resistance of~425Ωμm are achieved.X-ray photoelectron spectroscopy(XPS)and cross-sectional electron dispersive X-ray spectroscopy(EDX)results further reveal that the improved contact arises from the Cr-induced reduction of native oxide(SnOx)to Sn,which thins the tunneling barrier for efficient electron injection.Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.
