The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement.To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method,...The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement.To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method,we developed a new basic equation for the heat source of a Gaussian laser beam.Based on the new basic equation,an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer-or nanometer-scale thickness.Ex-periments were performed to measure the thermal conductivity of dielectric thin films with submicrometer-or nanometer-scale thickness.The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained.The obtained thermal conductivity of silicon dioxide film is 1.23W/(m.K),and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10-8m2.K/W.The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07W/(m.K)and 3.69×10-8m2.K/W,respectively.The experimental results are consistent with reported data.展开更多
基金supported by the State Key Program of National Natural Science Foundation of China(No. 50335010)the Zhejiang Provincial Natural Science Foundation(No.R105008),China
文摘The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement.To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method,we developed a new basic equation for the heat source of a Gaussian laser beam.Based on the new basic equation,an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer-or nanometer-scale thickness.Ex-periments were performed to measure the thermal conductivity of dielectric thin films with submicrometer-or nanometer-scale thickness.The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained.The obtained thermal conductivity of silicon dioxide film is 1.23W/(m.K),and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10-8m2.K/W.The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07W/(m.K)and 3.69×10-8m2.K/W,respectively.The experimental results are consistent with reported data.
