An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between...An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high level,the sample-and-hold circuits adopt a ping-pong operation.The driving circuit is fabricated in a commercially available 0.35μm two-poly four-metal 3.3 V mixed-signal CMOS process.The pixel cell area is 15×15μm^2 and the total chip occupies 15.5×12.3 mm^2.Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale（monochrome） display.The total power consumption of the chip is about 85 mW with a 3.3 V supply voltage.展开更多
基金Project supported by the State Key Development Program for Basic Research of China(No.2010CB327701)
文摘An 800×600 pixel organic light-emitting diode-on-silicon（OLEDoS） driving circuit is proposed.The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA.In order to keep the voltage of the column bus at a relatively high level,the sample-and-hold circuits adopt a ping-pong operation.The driving circuit is fabricated in a commercially available 0.35μm two-poly four-metal 3.3 V mixed-signal CMOS process.The pixel cell area is 15×15μm^2 and the total chip occupies 15.5×12.3 mm^2.Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale（monochrome） display.The total power consumption of the chip is about 85 mW with a 3.3 V supply voltage.
