Because of the difference in the coefficient of thermal expansion of Al alloy and SiC_p, the residual-stress generates during the process of fabricating Al alloy reinforced by SiC_p. The analyzing residual-stress quan...Because of the difference in the coefficient of thermal expansion of Al alloy and SiC_p, the residual-stress generates during the process of fabricating Al alloy reinforced by SiC_p. The analyzing residual-stress quantitatively by XRD shows that residual-stress is essential character of Al alloy reinforced by SiC_p, and the residual-stress in Al alloy matrix is tensile stress. The residual-stress decreases along with lessening of SiC_p size, which shows better microyield behavior. In annealing, the residual-stress of LY12+150#SiC_p is lower than that of ZL101+150#SiC, thus it has better microyield behavior. The residual-stress of solution-aging is bigger than that of annealing. The microyield behavior is also explained from the parameter change of microstructure to microyield behavior. Space-group relative microdistortion of Al alloy reinforced decreases along with lessening of SiC_p size, which has good microyield behavior.展开更多
文摘Because of the difference in the coefficient of thermal expansion of Al alloy and SiC_p, the residual-stress generates during the process of fabricating Al alloy reinforced by SiC_p. The analyzing residual-stress quantitatively by XRD shows that residual-stress is essential character of Al alloy reinforced by SiC_p, and the residual-stress in Al alloy matrix is tensile stress. The residual-stress decreases along with lessening of SiC_p size, which shows better microyield behavior. In annealing, the residual-stress of LY12+150#SiC_p is lower than that of ZL101+150#SiC, thus it has better microyield behavior. The residual-stress of solution-aging is bigger than that of annealing. The microyield behavior is also explained from the parameter change of microstructure to microyield behavior. Space-group relative microdistortion of Al alloy reinforced decreases along with lessening of SiC_p size, which has good microyield behavior.
