Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits

Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.

Organic-inorganic Hybrids Towards the Preparation of Nanoporous Composite Thin Films for Microelectronic Application

Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.

Exploration of the Townsend regime by discharge light emission in a gas discharge device

The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homo- geneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission （LE） intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Dif- ferent instantaneous conductivity ~t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

Enhanced performance triboelectric nanogenerator based on porous structure C/MnO_(2)nanocomposite for energy harvesting

Triboelectric nanogenerator(TENG)can realize a variety of mechanical energy collections in the environment,which has great potential in the field of wearable energy.However,many TENGs could rarely be satisfactory to wearable electronics promotion because of their expensive raw materials and complex manufacturing processes.In this study,a type of porous structure carbon powder/manganese dioxide(C/MnO_(2))nanocomposite is introduced.The material adopts low-cost,high-yield carbon powder,can be prepared in one step through a simple,economical,and environmentally friendly hydrothermal preparation process,and has high economic practicality.Superior power generation performance was obtained by modulating the charge trapping ability and storage capacity of polydimethylsiloxane@C/MnO_(2)(PDMS@C/MnO_(2))film based on variations in the weight-loading of C/MnO_(2).The maximum output voltage of carbon powder/manganese dioxide TENG(CM-TENG)is 63 V,which is 2.1 times that of PDMS-TENG and 1.86 times that of carbon powder TENG(C-TENG)and can easily light up 53 LEDs.Furthermore,CM-TENG can convert biological motion energy into electrical signals to detect human hand movements.The CM-TENG self-powered system can successfully drive various microelectronic devices,such as electronic watches,liquid crystal displays(LCDs),and calculators.This study provides a reliable,low-cost,high-performance,and widely applicable electronic system that shows great potential in future fields such as wearable devices and micro-sensing systems.