CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent gr...CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.展开更多
Diamond has poor interface tolerance with Al.To enhance interface bonding,in this study,tungsten carbide(WC)nanocoatings on the surface of diamond particles were prepared using sol–gel and in-situ reaction methods.WO...Diamond has poor interface tolerance with Al.To enhance interface bonding,in this study,tungsten carbide(WC)nanocoatings on the surface of diamond particles were prepared using sol–gel and in-situ reaction methods.WO_(3) sol–gel with two concentrations,0.2 mol/L,and 0.5 mol/L,was,respectively,coated on diamond particles,then sintered at 1250℃for 2 h to produce WC nanocoatings.The concentration of 0.2 mol/L WO_(3) sol–gel was not enough to cover the surface of the diamond completely,while 0.5 mol/L WO_(3) sol–gel could fully cover it.Moreover,WO_(3) was preferentially deposited on{100}planes of the diamond.WO_(3) converted to WC in-situ nanocoatings after sintering due to the in-situ reaction of WO_(3) and diamond.The diamond-reinforced Al composites with and without WC coating were fabricated by powder metallurgy.The diamond/Al composite without coating has a thermal conductivity of 584.7 W/mK,while the composite with a coating formed by 0.2 mol/L and 0.5 mol/L WO_(3) sol–gel showed thermal conductivities of 626.1 W/mK and 584.2 W/mK,respectively.The moderate thickness of nanocoatings formed by 0.2 mol/L WO_(3) sol–gel could enhance interface bonding,therefore improving thermal conductivity.The nanocoating produced by 0.5 mol/L WO_(3) sol–gel cracked during the fabrication of the composite,leading to Al12W formation and a decrease in thermal conductivity.展开更多
文摘CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.
基金supported by the National Natural Science Foundation of China(No.51931009)the Liaoning Revitalization Talents Program(No.XLYC2007009).
文摘Diamond has poor interface tolerance with Al.To enhance interface bonding,in this study,tungsten carbide(WC)nanocoatings on the surface of diamond particles were prepared using sol–gel and in-situ reaction methods.WO_(3) sol–gel with two concentrations,0.2 mol/L,and 0.5 mol/L,was,respectively,coated on diamond particles,then sintered at 1250℃for 2 h to produce WC nanocoatings.The concentration of 0.2 mol/L WO_(3) sol–gel was not enough to cover the surface of the diamond completely,while 0.5 mol/L WO_(3) sol–gel could fully cover it.Moreover,WO_(3) was preferentially deposited on{100}planes of the diamond.WO_(3) converted to WC in-situ nanocoatings after sintering due to the in-situ reaction of WO_(3) and diamond.The diamond-reinforced Al composites with and without WC coating were fabricated by powder metallurgy.The diamond/Al composite without coating has a thermal conductivity of 584.7 W/mK,while the composite with a coating formed by 0.2 mol/L and 0.5 mol/L WO_(3) sol–gel showed thermal conductivities of 626.1 W/mK and 584.2 W/mK,respectively.The moderate thickness of nanocoatings formed by 0.2 mol/L WO_(3) sol–gel could enhance interface bonding,therefore improving thermal conductivity.The nanocoating produced by 0.5 mol/L WO_(3) sol–gel cracked during the fabrication of the composite,leading to Al12W formation and a decrease in thermal conductivity.
