La1-x Sr x MnO3(LSMO)锰氧化物由于具有显著的庞磁电阻效应而被广泛关注,但少量Mn3O4杂质相会破坏其磁电阻效应.采用透射电子显微术及其相关分析方法,系统表征了杂质相Mn3O4中的微孪晶结构,并分析其形成机制.研究发现,在具有锐钛矿结构...La1-x Sr x MnO3(LSMO)锰氧化物由于具有显著的庞磁电阻效应而被广泛关注,但少量Mn3O4杂质相会破坏其磁电阻效应.采用透射电子显微术及其相关分析方法,系统表征了杂质相Mn3O4中的微孪晶结构,并分析其形成机制.研究发现,在具有锐钛矿结构的Mn3O4中,微孪晶的孪晶面为(112)面,且孪晶面附近含有少量Sr原子;孪晶面出现几率与Sr原子含量之间的关系表明,孪晶的形成归因于少量Sr原子降低了孪晶界面形成能,这有助于推测出从锐钛矿向钙钛矿发生结构演化的一般规律.展开更多
We have observed some kinds of defects in unseeded rapid zone-melting-recrystallized(RZMR)Si films formed with a RF-induced graphite strip heater system,using cross-section specimen electron microscope.The observed de...We have observed some kinds of defects in unseeded rapid zone-melting-recrystallized(RZMR)Si films formed with a RF-induced graphite strip heater system,using cross-section specimen electron microscope.The observed defects are subgrain boundaries(SGB),dislocations and microtwins.The most commonly observed defects are SGB which formed as a result of some orientation differences between adjacent grains during their rapid self-nucleation growth.Mixed type SGB were frequently observed,although some pure tilt or twist SGB existed also in the Si films.The rotation angular component around the axis parallel to scanning direction is much larger than that around other axes.SGB consist primarily of arrays of dislocation and have crystallographic angular deviations of one degree or less.During Si film cooling,dislocations and microtwins were formed due to non-uniform thermal stress.The crystallographic characters of the dislocations in Si films are the same as those in common bulk Si single crystals.Their Burgers vectors are b=a/2<110>.Some dis- locations run across the Si film,and the amorphous SiO_2 layers on and underneath the Si film can effectively block the dislocations and prevent them from entering the layers.Microtwins were observed in the Si films sometimes,the twinning planes being{111}.展开更多
文摘La1-x Sr x MnO3(LSMO)锰氧化物由于具有显著的庞磁电阻效应而被广泛关注,但少量Mn3O4杂质相会破坏其磁电阻效应.采用透射电子显微术及其相关分析方法,系统表征了杂质相Mn3O4中的微孪晶结构,并分析其形成机制.研究发现,在具有锐钛矿结构的Mn3O4中,微孪晶的孪晶面为(112)面,且孪晶面附近含有少量Sr原子;孪晶面出现几率与Sr原子含量之间的关系表明,孪晶的形成归因于少量Sr原子降低了孪晶界面形成能,这有助于推测出从锐钛矿向钙钛矿发生结构演化的一般规律.
基金This research is supported by the National Science Foundatinon of China.
文摘We have observed some kinds of defects in unseeded rapid zone-melting-recrystallized(RZMR)Si films formed with a RF-induced graphite strip heater system,using cross-section specimen electron microscope.The observed defects are subgrain boundaries(SGB),dislocations and microtwins.The most commonly observed defects are SGB which formed as a result of some orientation differences between adjacent grains during their rapid self-nucleation growth.Mixed type SGB were frequently observed,although some pure tilt or twist SGB existed also in the Si films.The rotation angular component around the axis parallel to scanning direction is much larger than that around other axes.SGB consist primarily of arrays of dislocation and have crystallographic angular deviations of one degree or less.During Si film cooling,dislocations and microtwins were formed due to non-uniform thermal stress.The crystallographic characters of the dislocations in Si films are the same as those in common bulk Si single crystals.Their Burgers vectors are b=a/2<110>.Some dis- locations run across the Si film,and the amorphous SiO_2 layers on and underneath the Si film can effectively block the dislocations and prevent them from entering the layers.Microtwins were observed in the Si films sometimes,the twinning planes being{111}.
