Low-temperature sintering and microwave dielectric properties of Li_2MgTi_3O_8 ceramics doped with BaCu(B_2O_5)

The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu（B2O5） addition can effectively reduce the sintering temperature to 900℃, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of er24.5, Q×f =24 622 GHz, rf=4.2×10-6℃ -1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900℃ for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.

Microstructure and microwave dielectric properties of ZnO-B_2O_3 added (Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3 ceramics

The effects of ZnO-B2O3 （ZB2） on the sintering behavior and microwave dielectric properties of （Ca0.254Li0.19Sm0.14）TiO3 ceramics were investigated. The densities of the specimens reached the maximum value by adding 3 wt.% ZB2 and then decreased. The sintering temperature of the specimens was lowered from 1300 to 1100℃ without degradation of the microwave dielectric properties. The （Ca0.254Li0.19Sm0.14）TiO3＋ 3 wt.% ZB2 sintered at 1100℃ for 3 h showed good microwave dielectric properties, εr= 108.2, Qf= 6545 GHz, and rf= 6.5 ppm/℃, respectively, indicating that ZB2 was an effective sintering aid to improve the densification and microwave dielectric properties of （Ca0.254Li0.19Sm0.14）TiO3 ceramics.

Improved microwave dielectric properties of MgAl_(2)O_(4)spinel ceramics through(Li_(1/3)Ti_(2/3))^(3+)doping

A series of nominal compositions MgAl_(2-x)(Li_(1/3)Ti_(2/3))_(x)O_(4)(x=0,0.04,0.08,0.12,0.16,and 0.20)ceramics were successfully prepared via the conventional solid-state reaction route.The phase compositions,microstructures,and microwave dielectric properties were investigated.The results of x-ray diffraction(XRD)and scanning electron microscopy(SEM)showed that a single phase of MgAl_(2-x)(Li_(1/3)Ti_(2/3))_(x)O_(4)ceramics with a spinel structure was obtained at x≤0.12,whereas the second phase of MgTi_(2)O_(5)appeared when x>0.12.The cell parameters were obtained by XRD refinement.As the x values increased,the unit cell volume kept expanding.This phenomenon could be attributed to the partial substitution of(Li_(1/3)Ti_(2/3))^(3+)for Al^(3+).Results showed that(Li_(1/3)Ti_(2/3))^(3+)doping into MgAl_(2)O_(4)spinel ceramics effectively reduced the sintering temperature and improved the quality factor(Q_f)values.Good microwave dielectric properties were achieved for a sample at x=0.20 sintering at 1500℃in air for 4 h:dielectric constantε_(r)=8.78,temperature coefficient of resonant frequencyτ_(f)=-85 ppm/℃,and Q_(f)=62300 GHz.The Q_(f)value of the x=0.20 sample was about 2 times higher than that of pure MgAl_(2)O_(4)ceramics(31600 GHz).Thus,MgAl_(2-x)(Li_(1/3)Ti_(2/3))_(x)O_(4)ceramics with excellent microwave dielectric properties can be applied to 5G communications.

Low-firing and temperature stability regulation of tri-rutile MgTa_(2)O_(6)microwave dielectric ceramics

A glass frit containing Li_(2)O-MgO-ZnO-B_(2)O_(3)-SiO_(2)component was used to explore the low-temperature sintering behaviors and microwave dielectric characteristics of tri-rutile MgTa_(2)O_(6)ceramics in this study.The good low-firing effects are presented due to the high matching relevance between Li_(2)O-MgO-ZnO-B_(2)O_(3)-SiO_(2)glass and MgTa_(2)O_(6)ceramics.The pure tri-rutile MgTa_(2)O_(6)structure remains unchanged,and high sintering compactness can also be achieved at 1150℃.We found that the Li_(2)O-MgO-ZnO-B_(2)O_(3)-SiO_(2)glass not only greatly improves the low-temperature sintering characteristics of MgTa_(2)O_(6)ceramics but also maintains a high(quality factor(Q)×resonance frequency(f))value while still improving the temperature stability.Typically,great microwave dielectric characteristics when added with 2wt%Li_(2)O-MgO-ZnO-B_(2)O_(3)-SiO_(2)glass can be achieved at 1150℃:dielectric constant,ε_(r)=26.1;Q×f=34267 GHz;temperature coefficient of resonance frequency,τ_(f)=-8.7×10^(-6)/℃.

Effect of La_2O_3-Dopant on Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb_2O_5-TiO_2 System Ceramics

La_2O_3-doped CaO-MgO-Nb_2O_5-TiO_2 system ceramics were prepared by solid-state ceramic technique. The microstructure and microwave dielectric properties of CaO-MgO-Nb_2O_5-TiO_2-La_2O_3 ceramics can be adjusted by varying the amount of La^(3+) ions. The results show that the replacement of Ca^(2+) by La^(3+) at A-site of the ceramics can increase the quality factor Q·f value as well as the temperature coefficient of resonant frequency τ_f and decrease the dielectric constant ε_r. With increase of La^(3+) contents, the dielectric constant decreases from 57 to 35 and Q·f value increases from 33400 GHz to 35000 GHz (at 7.6 GHz). Meanwhile, the temperature coefficient of resonant frequency is improved towards near zero. The dielectric properties of these compounds are related to octahedra tilting due to deficient vacancies at A-site.

Effect of La^(3+), Sr^(2+) on Microwave Dielectric Properties of CaO-MgO-Nb_2O_5^-TiO_2 System Ceramics

The effect of La^3 ＋ , Sr^2＋ on the microstructure and microwave properties of CaO-MgO-Nb2O5-TiO2 system ceramics was investigated. The result shows that a single complex perovskite structure formed within investigated composition range in La^3＋ , Sr2-doped CaO-MgO-Nb2O5-TiO2 system ceramics. With increasing of La^3＋ , Sr^2＋ content, the structure of La^3＋ , Sr2-doped CaO-MgO-Nb2O5-TiO2 system ceramic respectively maintain orthorhombic type.

Structure and Dielectric Properties of ZnO and Nb_2O_5 Doped BaO-TiO_2 System Microwave Ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.

Microstructures and Microwave Dielectric Properties of La-Substituted Ba(Mg_1/3Nb_(2/3))O_3 Ceramics

La substituted Ba(Mg_ 1/3Nb_ 2/3)O_3 ceramics was expected to enhance the 1∶2 ordering degree of B-site ions due to the existence of vacancies that promote cation movement and result in improvement of the Q_f value. The relation between the microstructure and microwave dielectric properties of Ba_ 1-xLa_ 2x/3(Mg_ 1/3Nb_ 2/3)O_3 ceramics was investigated. La substituted Ba(Mg_ 1/3Nb_ 2/3)O_3 ceramics can improve the sinterability of specimens. Both 1:2 ordering degree and grain size increase as A-site vacancies increase. This can be explained by the existence of vacancies that promote cation movement. The Q_f value increase with small La content, then decrease rapidly. The highest Q_f value achieved in this investigation is about 55000 GHz for Ba_ 0.995La_ 0.01/3(Mg_ 1/3Nb_ 2/3)O_3. The improvement of Q_f value with A-site vacancies is related to the increase of the degree of B-site ordering and grain size of the specimen.

Effect of La ^(3+) on Microwave Dielectric Properties of (Pb_ (0.45)Ca_ (0.55))(Fe_(0.50Nb_ (0.5))O_3 Ceramics

In this work, microwave dielectric properties of A-site substitution by La 3+ in (Pb_ 0.45Ca_ 0.55)(Fe_ 0.5Nb_ 0.5)O_3 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb_ 0.45Ca_ 0.55)_ 1-xLa_x](Fe_ 0.5Nb_ 0.5)O 3+ (P45CLFN) were improved because the solid solution of small amount of surplus La 3+ with (Pb,Ca) 2+ could eliminate oxygen vacancies, and the formation of secondary phase(pyrochlore) was also caused by surplus La 3+. The decreasing of dielectric constant with the increase of La 3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q_f values(7000～7300 GHz) are almost unchanged at x=0.02～0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x=0075 with Q_f=7267 GHz and K=89. TCF of all specimens are within ±5×10 -6 ℃ -1.

Effects of La^(3+) on microwave dielectric properties of(Pb_(0.5)Ca_(0.5))(Fe-(0.5)Ta_(0.5))O_3 ceramics

This work investigated the microwave dielectric properties of A-site substitution by rare earth La3＋in（Pb0.5Ca0.5）（Fe0.5Ta0.5）O3（PCFT） system.A single perovskite phase was obtained only when the doping content was 2%.Suitable La3＋ doping improved microwave dielectric performances.Excessive La3＋doping caused the formation of secondary phase,which resulted in the decreasing of permittivity εrand quality factor Qfvalues.Especially,when the doping content is 2%-5%,permittivity εrwas above 75 and Qfvalues were 6 902-7 416 GHz.

Structure and Dielectric Properties of Sb_2O_5-Doped ZrO_2-SnO_2-TiO_2 Microwave Ceramics

The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were studied as a function of the amount of Sb2O5 dopant. With the addition of 0-0.5% Sb2O5（molar ratio）, the substitution of Ti4^＋ ions with Sb^5＋ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies, When the amount of Sb^5＋ increased further （above 0.5%）, Q was decreased by increasing the electron concentration. When the system doped with 0.5% Sb2O5 was sintered at 1 150℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz, 20.0×10^-6/℃, respectively, at 6 GHz,

Microwave dielectric properties and compatibility with silver of low-fired Li_2MgTi_3O_8 ceramics with Li_2O-MgO-B_2O_3 frit

The effects of Li2O-MgO-B2O3 （LMB） glass additive on the sintering characteristics, phase purity, microstructure, and microwave dielectric properties of Li2MgTi3O8 ceramics were investigated. The experimental results demonstrate that the addition of LMB glass effectively lowers the sintering temperature of Li2MgTi3O8 ceramic from 1025 ℃ to 875 ℃ and induces no obvious degradation of the microwave dielectric properties. Typically, the 1.5%LMB glass-added Li2MgTi3O8 ceramic sintered at 875 ℃ for 4 h shows excellent microwave dielectric properties of Q×f=45403 GHz, εr=25.9 and τf≈0 ℃-1. The dielectric ceramic exhibits stability against the reaction with the Ag electrode, which indicates that the ceramics could be applied in multilayer microwave devices requiring low firing temperatures.

Microstructure and microwave dielectric properties of lead borosilicate glass ceramics with Al_2O_3

The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.

Sintering Behavior and Microwave Dielectric Properties of BBSZL Glass-doped ZnTiO_3 Ceramics for LTCC Applications

A novel low temperature co-fired ceramic(LTCC) material was fabricated by zinc titanate(ZnTiO_3) ceramics doped with B_2O_3-BaO-SiO_2-ZnO-Li_2O(BBSZL) glass. The influences of BBSZL glass on wetting behavior, sintering activation energy, phase composition, microstructure and microwave dielectric properties were investigated. The experimental results show that the sintering temperature of ZnTiO3 ceramics can be reduced from 1 100 to 925 ℃, meanwhile the sintering activation energy is decreased from 465.32 to 390.54 kJ·mol^(-1) by BBSZL glass aid, respectively. Moreover, BBSZL glass can inhibit the high Q×f ZnTiO_3 phase decompose into the low Q×f value Zn_2TiO_4 phase, which is propitious to obtain high Q×f value LTCC material. The ZnTiO_3-BBSZL composite sintered at 925℃ displays the excellent microwave dielectric properties with ε_r of 21.8, Q×f value of 42000 GHz, and τ_f of-75 ppm·℃^(-1).

Effect of Rare Earth Oxides on the Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb_2O_5-TiO_2 System Ceramics

La2O3 and SrO-doped CaO-MgO-Nb2O3-TiO2 system ceramics were prepared by solid-state ceramic technique.The microstructure and microwave dielectric properties of CaO-MgO-Nb2O5-TiO2-La2O3 cermics can be adjusted by varying the amount of La^3＋ or Sr^2＋ ions respectively.The replacement of Ca^2＋ by La^3＋ at A-site of the ceramics increases the quality factor Q value（ at 7.6GHz）as well as the temperature coefficient of resonant frequency τf and decreases the dielectric constant εr and the substitution of Sr^2＋ at A-site in this ceramics system exhibits opposite characteristics.The microwave properties of La^3＋,Sr^2＋-doped CaO-MgO-Nb2O5-TiO2 system ceramics depend on the degree of octahedral distortion inside materials.

Effect of Sn^(4+) B-Site Substitution on the Microstructure and Dielectric Properties of Ba(Mg_(1/3)Ta_(2/3))O_3 Microwave Ceramics

The effect of Sn^4＋ （BaSnO3） B-site substitution on the microstructure and dielectric properties of Ba（Mg1/3Ta2/3）O3 microwave ceramics was investigated. X-ray diffraction shows that a complex perovskite material Ba（Mg1/3Ta2/3）O3 was prepared. As Sn^4＋ content x increases in the （1-x） Ba（Mg1/3Ta2/3）O3-xBaSnO3 （x=0.00～0.20） system, the dielectric constant generally keeps unchanged, while TCF changes from positive to negative. Although the addition of Sn^4＋ reduces the ordering degree, Q f0 is still increased when the ceramics density increases. This trend implies that Q f0 of this system is mostly determined by ceramics density rather than ordering degree. After sintering at 1500℃ for 3 h, the system with x=0.15 was found to have excellent dielectric properties as follows：ε≈25, Q f0≥300,000 GHz at 7 GHz, TCF=-0.6×10^-6/℃.

Effects of V₂O₅Addition on Microwave Dielectric Properties of Li₂ZnTi₃O₈Ceramics for LTCC Applications

The sintering temperature of Li2ZnTi3O8 ceramics is still high for LTCC-based applications. In this work, V2O5 was doped as the sintering aid. The sintered density, phase composition, grain size, as well as microwave dielectric properties of Li2ZnTi3O8 ceramics with the addition of V2O5 were investigated. Based on our research, V2O5 doping effectively promoted the densification of Li2ZnTi3O8 ceramics at about 900°C, without affecting the main crystal phase of the ceramics. Li2ZnTi3O8 ceramics with 0.5 wt% V2O5 doping (sintered at 900°C) exhibited the best microwave dielectric properties (Qf =?22,400 GHz at about 6 GHz, εr = 25.5, and τf = -10.8 ppm/°C). The V2O5-doped Li2ZnTi3O8 ceramics were well cofired with Ag inner paste without cracks and diffusion, indicating its significant potential for LTCC applications.

Influence of CaxSr1-x(0≤x≤1)Substitution for Zn on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramic as Temperature Stable Materials

A temperature stable Li2Zn0.95(SrxCa1-x)0.05Ti3O8(0≤x≤1)ceramics were fabricated using a conventional solid-state route sintered at 1100℃for 4 h.The XRD results indicate that the main phase Li2ZnTi3O8 and secondary phase including SrxCa1-xTiO3(0≤x≤1)solid solution and TiO2 co-exist in composite and form a stable composite system when the(CaxSr1-x)(0≤x≤1)substitutes for Zn of Li2ZnTi3O8 ceramic.As x is increased from 0 to 1,the relative permittivity(εr)increases from 26.65 to 27.12,and the quality factor(Q×f)increases from 63300 to 66600 GHz.With the increased of x,the temperature coefficient of resonant frequency(τf)increases from 0.27 to 8.23 ppm/℃,and then decreases to 3.51 ppm/℃.On the whole,the Li2Zn0.95(SrxCa1-x)0.05Ti3O8(0≤x≤1)ceramics show excellent comprehensive properties of middleεr=25-27,higher Q×f≥60000 GHz andτf≤±8.5 ppm/℃.

Enhanced thermal conductivity and microwave dielectric properties by mesostructural design of multiphase nanocomposite

Next-generation packaging materials are expected to have higher thermal conductivity,because the heat accumulated in high-performance electronic equipment should be removed to increase the service life of the equipment.At the same time,the dielectric loss of the material needs to be reduced to lessen signal delay and attenuation,especially for the applications under high frequency.In this work,we introduce nano-silicon carbide(SiC)and carbon nanotubes(CNTs)into the polystyrene(PS)and poly(methyl methacrylate)(PMMA)blends system.The design of two-way migration at the interface of CNTs and SiC nanoparticles is realized through the masterbatch method and processing technology control.As a result,the thermal conductivity is successfully increased up to 75%.Meanwhile,compared to the CNTs single-phase migration system,it effectively reduces the dielectric loss of the nanocomposite and optimizes the electrical insulation.This work has significant practical application value in the design of electronic device substrates and packaging materials,and provides an innovative methodology for the mesostructure design of multiphase nanocomposites.

Paraelectric Doping Simultaneously Improves the Field Frequency Adaptability and Dielectric Properties of Ferroelectric Materials:A Phase-Field Study

Recent years,the polarization response of ferroelectrics has been entirely studied.However,it is found that the polarization may disappear gradually with the continually applied of electric field.In this paper,taking K0.48Na0.52NbO3(KNN)as an example,it was demonstrated that the residual polarization began to decrease when the electric field frequency increased to a certain extent using a phase-field methods.The results showed that the content of out-of-plane domains increased first and then decreased with the increase of applied electric field frequency,the maximum polarization disappeared at high frequencies,and the hysteresis loop became elliptical.In order to further study the abnormal changes of hysteresis loops of ferroelectrics under high electric field frequency,we analyzed the hysteresis loop and dielectric response of solid solution 0.1SrTiO_(3)-0.9K_(0.48)Na_(0.52)NbO_(3).It was found that the doped hysteresis loop maintained its shape at higher frequency and the dielectric constant increased.This kind of doping has a higher field frequency adaptability,which has a key guiding role in improving the dielectric properties of ferroelectric thin films and expanding the frequency application range of ferroelectric nano memory。