GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network

An lnGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process. From the stability factor K, the device shows unconditional stability in a wide frequency range due to the RC network. The power characteristics of the device as measured by a loadpull system show that the large-signal performance of the power transistor is affected slightly by the RC network. Psat is 30dBm at 5.4GHz,and PldB is larger than 21.6dBm at llGHz. The stability of the device due to RC network is proved by a power combination circuit. This makes the power transistor very suitable for applications in microwavc high power ttBT amplifiers.

Low Voltage Class C SiGe Microwave Power HBTs

The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.

X-BAND CIRCULARLY POLARIZED RECTENNAS FOR MICROWAVE POWER TRANSMISSION APPLICATIONS

Circularly polarized rectennas operating at X-band are studied in this paper. The quasi-square patches fed by aperture coupling are used as the circularly polarized receiving antennas, which are easily matched and integrated with the circuits of rectennas. The double-layer structure not only minimizes the size of the rectennas but also decreases the effects of the circuits on the an- tenna. The receiving elements have broader bandwidth and higher gain than the single-layer patches. Two rectennas operating at 10GHz are designed, fabricated and measured. The voltage of 3.86V on a load of 200? is measured and a high RF-DC conversion efficiency of 75% is obtained at 9.98GHz. It is convenient for this kind of rectennas to form large arrays for high power applications.

Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

Electron cyclotron resonance （ECR） plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon （H-DLC） films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1×10^9 Ω.cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

Optimal Design of Aperture Illuminations for Microwave Power Transmission with Annular Collection Areas

This work presents an optimal design method of antenna aperture illumination for microwave power transmission with an annular collection area.The objective is to maximize the ratio of the power radiated on the annular collection area to the total transmitted power.By formulating the aperture amplitude distribution through a summation of a special set of series,the optimal design problem can be reduced to finding the maximum ratio of two real quadratic forms.Based on the theory of matrices,the solution to the formulated optimization problem is to determine the largest characteristic value and its associated characteristic vector.To meet security requirements,the peak radiation levels outside the receiving area are considered to be extra constraints.A hybrid grey wolf optimizer and Nelder–Mead simplex method is developed to deal with this constrained optimization problem.In order to demonstrate the effectiveness of the proposed method,numerical experiments on continuous apertures are conducted;then,discrete arrays of isotropic elements are employed to validate the correctness of the optimized results.Finally,patch arrays are adopted to further verify the validity of the proposed method.

Power Control and Data Acquisition System for High Power Microwave Test Bench

The 6 MW/4.6 GHz lower hybrid current drive （LHCD） system will be set up on the experimental advanced superconducting tokamak （EAST） for achieving a steady-state op- eration. The high power and continuous wave （CW） mode microwave test bench operating at 250 kW/4.6 GHz has already been finished, which can be used to simulate different kinds of high power microwave environments to test microwave components and units for the new LHCD sys- tem. The power control and data acquisition system on the test bench composed of power control, high reflected power protection and data acquisition function is described here in detail. Long- term operation of the test bench showed that the power control and data acquisition system is very stable and reliable.

Design and fabrication of a terminating type MEMS microwave power sensor

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented. An electrothermal model is introduced to simulate the heat transfer behavior and temperature distribution. The sensor measured the microwave power from –20 to 20 dBm up to 20 GHz. The sensitivity of the sensor is 0.27 mV/mW at 20 GHz, and the input return loss is less than –26 dB over the entire experiment frequency range. In order to improve the sensitivity, four different types of coplanar waveguide （CPW） were designed and the sensitivity was significantly increased by about a factor of 2.

Sensitivity of MEMS microwave power sensor with the length of thermopile based on Fourier equivalent model

A Fourier equivalent model is introduced to research the thermal transfer behavior of a terminating-type MEMS microwave power sensor.The fabrication of this MEMS microwave power sensor is compatible with the GaAs MMIC process.Based on the Fourier equivalent model,the relationship between the sensitivity of a MEMS microwave power sensor and the length of thermopile is studied in particular.The power sensor is measured with an input power from 1 to 100 mW at 10 GHz,and the measurement results show that the power sensor has good input match characteristics and high linearity.The sensitivity calculated from a Fourier equivalent model is about 0.12,0.20 and 0.29 mV/mW with the length at 40,70 and 100μm,respectively,while the sensitivity of the measurement results is about 0.10,0.22 and 0.30 mV/mW,respectively,and the differences are below 0.02 mV/mW. The sensitivity expression based on the Fourier equivalent model is verified by the measurement results.

A micromachined inline type microwave power sensor with working state transfer switches

A wideband 8-12 GHz inline type microwave power sensor, which has both working and non-working states, is presented. The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane. In order to reduce microwave losses during the non-working state, a new structure of working state transfer switches is proposed to realize the two working states. The fabrication of the power sensor with two working states is compatible with the GaAs MMIC （monolithic microwave integrated circuit） process. The experimental results show that the power sensor has an insertion loss of 0.18 dB during the non-working state and 0.24 dB during the working state at a frequency of 10 GHz. This means that no microwave power has been coupled from the CPW line during the non-working state.

Thermal time constant of a terminating type MEMS microwave power sensor

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented.An electrothermal model is introduced to simulate the thermal time constant. An analytical result,about 160 ms,of the thermal time constant from the non-stationary Fourier heat equations for the structure of the sensor is also given.The sensor measures the microwave power jumping from 15 to 20 dBm at a constant frequency 15 GHz,and the experimental thermal time constant result is 180 ms.The frequency is also changed from 20 to 10 GHz with a constant power 20 dBm,and the result is also 180 ms.Compared with the analytical and experimental results,the model is verified.

Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs

This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.

Progress in the Study of Microwave Pyrolysis Technology and Its Influencing Factors

In recent years, the effective conversion of organic wastes into valuable products has been a focus and difficulty in sustainable energy and environmental management. Organic wastes come from a wide range of sources, and industrial and agricultural sources are the main sources of organic waste in China, which can be controlled by microwave pyrolysis technology. In microwave pyrolysis treatment, catalysts have been the key material, microwave absorber, and catalyst of the research hotspot in recent years. This paper summarises the typical influencing parameters of microwave pyrolysis (including microwave power, pyrolysis temperature and microwave absorber), and also summarises the various catalysts applied in microwave pyrolysis, and looks forward to the potential application prospect of pyrolysis products, and the future development direction.

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

Study on the Generation of Ultra-Wideband (UWB) High Power Microwave

The experimental study of ultra-wideband (UWB) technology, its generation and on-line measurement are presented. An experimental repetitive UWB system is designed, manufactured, and tested. High-pressure spark gap switch and its components, as well as oil spark gap switch are studied experimentally on the system. Experimental results indicate that the system operates at a 200 pps repetitive rate with a stable performance. 100 MW peak power UWB pulses are obtained on the system. Fast-time response capacitive divider is designed and fabricated, allowing for an accurate measurement of the high power UWB signal. The main issues related to the design of the switch and the UWB signal online measurement are discussed.

Changes in Rat Testicular Germ Cell Apoptosis after High Power Microwave Radiation

Aim:To study the effect of high power microwave (HPM) radiation on the testicular germ cell apoptosis. Methods: One hundred and twenty-five Spraque-Dawley rats were randomly divided into two groups, the control group and the experimental group and the latter was further divided into four subgroups: 10 mW/cm2 5 min, 10 mW/cm210 min, 20 mw/cm2 5 min and 20 mW/cm210 min. The experimental groups were radiated with S wave band of 10 mW/ cm2,20 mW/cm2 high power microwave for 5 or 10 min. Testicular samples were taken at 6 h, 24 h, 48 h, 72 h and 5 d after radiation. The testicular germ cell apoptosis was detected by in situ terminal deoxynucleotityl transferase mediated dUTP nick end labeling (TUNEL). Results: The number of apoptotic cells of the 6 h, 24 h and 48 h experimental groups after 10 and 20 mW/cm2 radiation for 5 min was significantly larger than that of the controls (P< 0.01), especially after 10 mW/cm2 radiation. The number of the 6 h group reached the peak (161.27±+5.90)/5 convoluted tubules. The changes in the other experimental groups had no significant difference compared with the controls (P>0.05). Conclusion: HPM increases the germ cell apoptosis of rat testis, which is related to the time of radiation and sample acquisition. In the condition of the present test, 5 minutes of HPM radiation may significantly enhance testicular germ cell apoptosis and damage, which in turn may influence the reproductive function of the rats.

Scavenging Microwave Wireless Power:A Unified Model,Rectenna Design Automation,and Cutting-Edge Techniques

While sufficient review articles exist on inductive short-range wireless power transfer(WPT),long-haul microwave WPT(MWPT)for solar power satellites,and ambient microwave wireless energy harvesting(MWEH)in urban areas,few studies focus on the fundamental modeling and related design automation of receiver systems.This article reviews the development of MWPT and MWEH receivers,with a focus on rectenna design automation.A novel rectifier model capable of accurately modeling the rectification process under both high and low input power is presented.The model reveals the theoretical boundary of radio frequency-to-direct current(dc)power conversion efficiency and,most importantly,enables an automated system design.The automated rectenna design flow is sequential,with the minimal engagement of iterative optimization.It covers the design automation of every module(i.e.,rectifiers,matching circuits,antennae,and dc–dc converters).Scaling-up of the technique to large rectenna arrays is also possible,where the challenges in array partitioning and power combining are briefly discussed.In addition,several cutting-edge rectenna techniques for MWPT and MWEH are reviewed,including the dynamic range extension technique,the harmonics-based retro-directive technique,and the simultaneous wireless information and power transfer technique,which can be good complements to the presented automated design methodology.

20-Hydroxyecdysone Improves Neuronal Differentiation of Adult Hippocampal Neural Stem Cells in High Power Microwave Radiation-Exposed Rats

Objective The hippocampus is thought to be a vulnerable target of microwave exposure.The aim of the present study was to investigate whether 20-hydroxyecdysone(20E)acted as a fate regulator of adult rat hippocampal neural stem cells(NSCs).Furthermore,we investigated if 20E attenuated high power microwave(HMP)radiation-induced learning and memory deficits.Methods Sixty male Sprague-Dawley rats were randomly divided into three groups:normal controls,radiation treated,and radiation+20E treated.Rats in the radiation and radiation+20E treatment groups were exposed to HPM radiation from a microwave emission system.The learning and memory abilities of the rats were assessed using the Morris water maze test.Primary adult rat hippocampal NSCs were isolated in vitro and cultured to evaluate their proliferation and differentiation.In addition,hematoxylin&eosin staining,western blotting,and immunofluorescence were used to detect changes in the rat brain and the proliferation and differentiation of the adult rat hippocampal NSCs after HPM radiation exposure.Results The results showed that 20E induced neuronal differentiation of adult hippocampal NSCs from HPM radiation-exposed rats via the Wnt3a/β-catenin signaling pathway in vitro.Furthermore,20E facilitated neurogenesis in the subgranular zone of the rat brain following HPM radiation exposure.Administration of 20E attenuated learning and memory deficits in HPM radiation-exposed rats and frizzled-related protein(FRZB)reduced the 20E-induced nuclear translocation ofβ-catenin,while FRZB treatment also reversed 20E-induced neuronal differentiation of NSCs in vitro.Conclusion These results suggested that 20E was a fate regulator of adult rat hippocampal NSCs,where it played a role in attenuating HPM radiation-induced learning and memory deficits.

Optimization of Intermittent Variable Power Microwave Heating Process for Blueberry Pulp

To improve heating uniformity and anthocyanin content of the blueberry pulp under microwave heating,the intermittent variable power microwave heating technology was introduced in the study.The effects of technology parameters in terms of high microwave intensity heating time,intermittent time,low microwave intensity and low microwave intensity heating time on the blueberry pulp quality parameters(heating uniformity,average moisture content,the highest temperature and anthocyanin content)were investigated by using the response surface method.The results showed that the longer heating time under different microwave intensities resulted in the poorer heating uniformity.The intermittent stage promoted heat and mass transfer within the pulp and reduced the temperature difference and moisture gradient within the pulp,which enhanced desired uniformity of temperature and moisture distribution before entering the low microwave intensity heating stage.Therefore,the longer the intermittent time,the greater the heating uniformity.The optimal parameters were developed as high microwave intensity of 4 W·g^(-1),high microwave intensity heating time of 9.86 min,intermittent time of 10 min,low microwave intensity of 2.2 W·g^(-1)and low microwave intensity heating time of 6 min.This research might provide guidance for microwave heating berry fruits.

Polysilicon Emitter Double Mesa Microwave P ower SiGe HBT

A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.