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A high rectification efficiency Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission
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作者 Dong Zhang Jianjun Song +1 位作者 Xiaohuan Xue Shiqi Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第6期702-711,共10页
The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 ... The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm. 展开更多
关键词 microwave wireless energy transmission quantum structure GeSn MOS rectification
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