GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed r...GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.展开更多
文摘GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.
