Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is pre...Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.展开更多
High total dissolved solids (TDS) content is one of the most important pollution contributors in lakes in arid and semiarid areas. Ulansuhai Lake, located in Urad Qianqi, Inner Mongolia, China, was selected as the o...High total dissolved solids (TDS) content is one of the most important pollution contributors in lakes in arid and semiarid areas. Ulansuhai Lake, located in Urad Qianqi, Inner Mongolia, China, was selected as the object of study. Temperatures and TDS contents of both ice and under-ice water were collected together with corresponding ice thickness. TDS profiles were drawn to show the distribution of TDS and to describe TDS migration. The results showed that about 80% (that is 3.602x108 kg) of TDS migrated from ice to water during the whole growth period of ice. Within ice layer, TDS migration only occurred during initial ice-on period, and then perished. The TDS in ice decreased with increasing ice thickness, following a negative exponential-like trend. Within un- der-ice water, the TDS migrated from ice-water interface to the entire water column under the effect of concentra- tion gradient until the water TDS content was uniform. In winter, 6.044x 107 kg (16.78% of total TDS) TDS migrated from water to sedirnent, which indicated that winter is the best time for dredging sediment. The migration effect gives rise to TDS concentration in under-ice water and sediment that is likely to affect ecosystem and water quality of the Yellow River. The trend of transfer flux of ice-water and water-sediment interfaces is similar to that of ice growth rate, which reveals that ice growth rate is one of the determinants of TDS migration. The process and mechanism of TDS migration can be referenced by research on other lakes with similar TDS content in cold and arid areas.展开更多
Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bo...Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant No.2011CB301903)+5 种基金the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110171110021)the International Sci.&Tech.Collaboration Program of China(Grant No.2012DFG52260)the International Sci.&Tech.Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
文摘Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.
基金Financial support was provided by the National Natural Science Foundation of China (50569002,50669004 and 51069007)Natural Science Foundation of Inner Mongolia (200711020604)Key Project from Department of Water Resources of Inner Mongolia (20080105)
文摘High total dissolved solids (TDS) content is one of the most important pollution contributors in lakes in arid and semiarid areas. Ulansuhai Lake, located in Urad Qianqi, Inner Mongolia, China, was selected as the object of study. Temperatures and TDS contents of both ice and under-ice water were collected together with corresponding ice thickness. TDS profiles were drawn to show the distribution of TDS and to describe TDS migration. The results showed that about 80% (that is 3.602x108 kg) of TDS migrated from ice to water during the whole growth period of ice. Within ice layer, TDS migration only occurred during initial ice-on period, and then perished. The TDS in ice decreased with increasing ice thickness, following a negative exponential-like trend. Within un- der-ice water, the TDS migrated from ice-water interface to the entire water column under the effect of concentra- tion gradient until the water TDS content was uniform. In winter, 6.044x 107 kg (16.78% of total TDS) TDS migrated from water to sedirnent, which indicated that winter is the best time for dredging sediment. The migration effect gives rise to TDS concentration in under-ice water and sediment that is likely to affect ecosystem and water quality of the Yellow River. The trend of transfer flux of ice-water and water-sediment interfaces is similar to that of ice growth rate, which reveals that ice growth rate is one of the determinants of TDS migration. The process and mechanism of TDS migration can be referenced by research on other lakes with similar TDS content in cold and arid areas.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 61574173)the National Key Research and Development Program,China(Grant No.2016YFB0400105)+9 种基金the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the International Science and Technology Collaboration Program of Guangzhou City,China(Grant No.2016201604030055)the National High Technology Research and Development Program of China(Grant No.2014AA032606)Guangdong Provincial Natural Science Foundation,China(Grant No.2015A030312011)the Science&Technology Plan of Guangdong Province,China(Grant Nos.2015B090903062,2015B010132007,and2015B010129010)the Science and Technology Plan of Guangzhou,China(Grant No.201508010048)the Science and Technology Plan of Foshan,China(Grant No.201603130003)Guangdong–Hong Kong Joint Innovation Project of Guangdong Province,China(Grant No.2014B050505009)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17)the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics,Sun Yat-sen University(Grant No.20167612042080001)
文摘Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.