This paper describes the design,characterization and fabrication of a planar In0.53Ga0.47As based planar Gunn diode on an In P semi-insulating substrate.The planar Gunn diode was designed in Coplanar Waveguide(CPW)for...This paper describes the design,characterization and fabrication of a planar In0.53Ga0.47As based planar Gunn diode on an In P semi-insulating substrate.The planar Gunn diode was designed in Coplanar Waveguide(CPW)format with an active channel length and width of 4μm and 120μm respectively,and modeled using the Advanced Design System(ADS-2009)simulation package.The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm,which is the highest recorded power for an In P based planar Gunn diode.展开更多
基金supported by ESPRC through EP/H011862/1,and EP/H012966/1
文摘This paper describes the design,characterization and fabrication of a planar In0.53Ga0.47As based planar Gunn diode on an In P semi-insulating substrate.The planar Gunn diode was designed in Coplanar Waveguide(CPW)format with an active channel length and width of 4μm and 120μm respectively,and modeled using the Advanced Design System(ADS-2009)simulation package.The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm,which is the highest recorded power for an In P based planar Gunn diode.
