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A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints 被引量:2
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作者 Wanli YANG Jinxi LIU +1 位作者 Yongliang XU Yuantai HU 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2020年第6期845-858,共14页
A full-coupling model on the current-voltage(J-V)characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconduct... A full-coupling model on the current-voltage(J-V)characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor(M/S)contacts.The depletion layer assumption proposed by the Shockley model is discarded.Gauss’law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly calculated.Then,the stable continuity equations of the electron and hole currents are established to show the current conversion between minority-and majority-carriers inside the whole PN junction region.By analyzing all the conversion procedure,the J-V characteristics of a PN junction are obtained with good agreement to the experimental results,which are closely dependent on the minority-carrier lifetime and doping concentrations.Obviously,the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices. 展开更多
关键词 SEMICONDUCTOR current-voltage(J-V)characteristic minority-and majoritycarrier currents depletion layer approximation minority-carrier lifetime
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