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In-situ Formation of SiC Whiskers by Ni-catalyzed Silicon-modified Pitch and Its Mechanism
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作者 XIA Zhongfeng WANG Zhoufu +2 位作者 WANG Xitang LIU Hao MA Yan 《China's Refractories》 CAS 2015年第2期32-35,共4页
The pitch was dried and modified with 1 mass%nickel nitrate and 10 mass% Si powder successively,then carbonized in Ar atmosphere at 900,1 000,1 100,1 200,1 300,and 1 400 ℃,respectively. Effects of carbonization tempe... The pitch was dried and modified with 1 mass%nickel nitrate and 10 mass% Si powder successively,then carbonized in Ar atmosphere at 900,1 000,1 100,1 200,1 300,and 1 400 ℃,respectively. Effects of carbonization temperature on phase composition and microstructure of Ni-catalyzed silicon modified pitch were studied by XRD,FESEM and EDS,and the growth mechanism of Si C whiskers was discussed as well. The results show that Si C whiskers form in the carbonized products of modified pitch processed in Ar atmosphere at 1 000,1 100,1 200,1 300,or 1 400 ℃; its length is about1- 6 μm; its growth mode is apical growth,and its growth mechanism accords with V- L- S mechanism. 展开更多
关键词 silicon carbide whisker modified pitch SILICON NICKEL CATALYST
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