In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.Transmission electron microscop...In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.Transmission electron microscopy re.sults indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions,indicating that the high resistivity of the edge termination region is not induced by amorphization.Alternately,ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer In addition to the bulk ffect,the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface,which was confirmed via atomic force microscopy(AFM)and X-ray photoelectron spectroscopy,The implanted surface with a large density of nitrogen vacancies can accommodate electrons,and it is more conductive than the bulk in the implanted region,which is validated via spreading resistance profiling and conductive AFM measurements.Under reverse bias,the implanted surface can spread the potential in the lateral direction,whereas the acceptor traps capture electrons acting as space charges,shifting the peak electric field into the bulk region in the vertical direction.As a result,the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kv.展开更多
基金supported by the National Key Research and Devel.opment Program of China(Grant No.2017YFB0403000)the National Natural Science Foundation of China(Grants No.61774002 and 11634002).
文摘In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed.Transmission electron microscopy re.sults indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions,indicating that the high resistivity of the edge termination region is not induced by amorphization.Alternately,ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer In addition to the bulk ffect,the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface,which was confirmed via atomic force microscopy(AFM)and X-ray photoelectron spectroscopy,The implanted surface with a large density of nitrogen vacancies can accommodate electrons,and it is more conductive than the bulk in the implanted region,which is validated via spreading resistance profiling and conductive AFM measurements.Under reverse bias,the implanted surface can spread the potential in the lateral direction,whereas the acceptor traps capture electrons acting as space charges,shifting the peak electric field into the bulk region in the vertical direction.As a result,the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kv.
