The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases an...The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.展开更多
Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years...Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.展开更多
We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile stra...We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.展开更多
The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420μA/lm. This paper studies the inner carrier concent...The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420μA/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy (MBE) growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1×10^19 cm-3 to 1×1018 cm-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition,by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaA1As causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.展开更多
In order to develop the photodetector for effective blue-green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Alo.7Gao.3Aso.9Po.1/GaAso.9Po.1 photocathode grown by molecular beam ep...In order to develop the photodetector for effective blue-green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Alo.7Gao.3Aso.9Po.1/GaAso.9Po.1 photocathode grown by molecular beam epitaxy is tentatively fabricated. A comparison of photoelectric property, spectral characteristic and performance parameter be- tween the transmission-mode GaAsP-based and blue-extended GaAs-based photocathodes shows that the GaAsP-based photocathode possesses better absorption and higher quantum efficiency in the blue-green waveband, combined with a larger surface electron escape probability. Especially, the quantum efficiency at 532 nm for the GaAsP-based photocathode achieves as high as 59%, nearly twice that for the blue-extended GaAs-based one, which would be more conducive to the underwater range-gated imaging based on laser illumination. Moreover, the simulation results show that the favorable blue-green response can be achieved by optimizing the emission-layer thickness in a range of 0.4 μm-0.6 μm.展开更多
High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achiev...High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices (SLs) achieve approximately 100 arcsec (75 periods) and zero (300 periods), with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A (75 periods) and 2.1A (300 periods) over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL (75 periods) materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.展开更多
HL-2A tokamak is the first tokamak with divertors in China. The plasma boundary and the position of the striking point on the target plates of the HL-2A closed diwrtor were simulated by the current filament code and t...HL-2A tokamak is the first tokamak with divertors in China. The plasma boundary and the position of the striking point on the target plates of the HL-2A closed diwrtor were simulated by the current filament code and they were in agreement with the diagnostic results in the divertor. Supersonic molecular beam injection (SMBI) system was first installed and tested on the HL-2A tokamak in 2004. In the present experiment low pressure SMBI fuelling on the HL-2A closed divertor was carried out. The experimental results indicate that the divertor was operated in the 'linear regime' and during the period of SMB pulse injection into the HL-2A plasma the power density eonvected at the target plate surfaces was 0.4 times of that before or after the beam injection. It is a useful fuelling method for decreasing the heat load on the neutralizer plates of the divertor.展开更多
Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserte...Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice (SL) structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.展开更多
We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is ...We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.展开更多
The ultrahigh vacuum scanning tunneling microscope(STM)was used to characterize the GaSb_(1-x)Bi_(x) films of a few nanometers thickness grown by the molecular beam epitaxy(MBE)on the GaSb buffer layer of 100 nm with ...The ultrahigh vacuum scanning tunneling microscope(STM)was used to characterize the GaSb_(1-x)Bi_(x) films of a few nanometers thickness grown by the molecular beam epitaxy(MBE)on the GaSb buffer layer of 100 nm with the GaSb(100)substrates.The thickness of the GaSb_(1-x)Bi_(x) layers of the samples are 5 and 10 nm,respectively.For comparison,the GaSb buffer was also characterized and its STM image displays terraces whose surfaces are basically atomically flat and their roughness is generally less than 1 monolayer(ML).The surface of 5 nm GaSb_(1-x)Bi_(x) film reserves the same terraced morphology as the buffer layer.In contrast,the morphology of the 10 nm GaSb_(1-x)Bi_(x) film changes to the mound-like island structures with a height of a few MLs.The result implies the growth mode transition from the two-dimensional mode as displayed by the 5 nm film to the Stranski-Krastinov mode as displayed by the 10 nm film.The statistical analysis with the scanning tunneling spectroscopy(STS)measurements indicates that both the incorporation and the inhomogeneity of Bi atoms increase with the thickness of the GaSb_(1-x)Bi_(x) layer.展开更多
This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current dens...This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm^2 has been obtained for diodes with AlAs barriers of ten monolayers, and an Ino.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.展开更多
PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform ...PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the inter- play between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spec- troscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.展开更多
A series of metamorphic high electron mobility transistors (MMHEMTs) with different Ⅴ/Ⅲ flux ratios are grown on CaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic ...A series of metamorphic high electron mobility transistors (MMHEMTs) with different Ⅴ/Ⅲ flux ratios are grown on CaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/(V.s) and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.展开更多
A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate a...A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.展开更多
A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantu...A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.展开更多
In this study, finite element analysis (FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular s...In this study, finite element analysis (FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular stream peak at different positions along the center axis of the beam, which correspond to local minimums of the molecular densities. With the increase of the throat diameter, the first peak of the Mach number increases first and then decreases, while that of the molecular number density increases gradually. Moreover, both first peaks shift progressively away from the throat. At the last part, we discuss the possible applications of our FEA approach to solve some crucial problems met in modern transportations.展开更多
AlxIn1-xAs with 0.47&lex&le0.62 onto (100) oriented InP substrate was grown by molecular beam epitaxy (MBE) and characterized with X-ray double crystal diffraction, low temperature photoluminescence and an ele...AlxIn1-xAs with 0.47&lex&le0.62 onto (100) oriented InP substrate was grown by molecular beam epitaxy (MBE) and characterized with X-ray double crystal diffraction, low temperature photoluminescence and an electron probe. Results show their high qualities. Strain and residual stress were studied in detail.展开更多
Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is...Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is also predicted to have a lattice-symmetrically protected topological state in the (110) plane due to its strong: spin-orbil coupling and electron correlation. Compared with non-polar (001)-SflrO3, the especial polarity of (110)-SrIrC)3 undoubtedly adds the: difficulty of fabrication and largely impedes the research on its surface states. Here, we have successfully synthesized high-quality (110)-SflrO3 thin films on (110)-SrTiO3 substrates by reactive molecular beam epitaxy fi^r the first time. Both reflec- tion high-energy electron diffraction pattems and x-ray diffraction measurements suggest the expected orientation and outstanding crystallinity. A (1 × 2) surface reconstruction driven from the surface instabiJity, the. same as that reported in (110)-SrTiO3, is observed. The electric transport measurements uncover that (110)-SrIrO3 exhibits a more prominent semimetallic property in comparison to (001)-SrIrO3.展开更多
Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE),and their properties of structure and resistivity with varying N2 pressure were investigated.The results sh...Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE),and their properties of structure and resistivity with varying N2 pressure were investigated.The results showed that atomically flat TiN films with layer-by-layer growth mode were successfully grown on Si(100) substrates,and (200) was the preferred orientation.With the increasing of N2 pressure,the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle.At pressure of 0.1 Pa,stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane.All films showed high reflectance to infrared spectrum and the films with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion,while the stoichiometric TiN film depicted the minimum resistivity,around 19 μΩ·cm.展开更多
Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved ...Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.展开更多
基金supported by the National Key Research and Development Program of China (2017YFE0131500, 2022YFB2802801)the National Natural Science Foundation of China (61834008, U21A20493)+1 种基金the Key Research and Development Program of Jiangsu Province (BE2020004, BE2021008-1)the Suzhou Key Laboratory of New-type Laser Display Technology (SZS2022007)
文摘The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.
基金supported by the National Key R&D Program of China(Grant No.2021YFB2206503)National Natural Science Foundation of China(Grant No.62274159)+1 种基金CAS Project for Young Scientists in Basic Research(Grant No.YSBR-056)the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102).
文摘Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.
基金Project supported by the National Key Research and Development Project of China (Grant No. 2018YFB2200500)the National Natural Science Foundation of China (Grant Nos. 61790583, 61835011, 62174158 and 61991431)+1 种基金Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021107)the Key Program of the Chinese Academy of Sciences (Grant No. XDB43000000)。
文摘We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60678043 and 60801036)
文摘The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420μA/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy (MBE) growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1×10^19 cm-3 to 1×1018 cm-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition,by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaA1As causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.
基金supported by the National Natural Science Foundation of China(Grant No.61301023)the Science and Technology on Low-Light-Level Nigh Vision Laboratory Foundation,China(Grant No.BJ2014001)
文摘In order to develop the photodetector for effective blue-green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Alo.7Gao.3Aso.9Po.1/GaAso.9Po.1 photocathode grown by molecular beam epitaxy is tentatively fabricated. A comparison of photoelectric property, spectral characteristic and performance parameter be- tween the transmission-mode GaAsP-based and blue-extended GaAs-based photocathodes shows that the GaAsP-based photocathode possesses better absorption and higher quantum efficiency in the blue-green waveband, combined with a larger surface electron escape probability. Especially, the quantum efficiency at 532 nm for the GaAsP-based photocathode achieves as high as 59%, nearly twice that for the blue-extended GaAs-based one, which would be more conducive to the underwater range-gated imaging based on laser illumination. Moreover, the simulation results show that the favorable blue-green response can be achieved by optimizing the emission-layer thickness in a range of 0.4 μm-0.6 μm.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11474248,61176127,61006085,61274013 and 61306013the Key Program for International S&T Cooperation Projects of China under Grant No 2011DFA62380the Ph.D. Programs Foundation of the Ministry of Education of China under Grant No 20105303120002
文摘High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices (SLs) achieve approximately 100 arcsec (75 periods) and zero (300 periods), with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A (75 periods) and 2.1A (300 periods) over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL (75 periods) materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.
基金Project supported by the National Science Foundation of China (Grant Nos 19775011, 10075016 and 10475024).The authors wish to thank the HL-2A team members for their hard work.
文摘HL-2A tokamak is the first tokamak with divertors in China. The plasma boundary and the position of the striking point on the target plates of the HL-2A closed diwrtor were simulated by the current filament code and they were in agreement with the diagnostic results in the divertor. Supersonic molecular beam injection (SMBI) system was first installed and tested on the HL-2A tokamak in 2004. In the present experiment low pressure SMBI fuelling on the HL-2A closed divertor was carried out. The experimental results indicate that the divertor was operated in the 'linear regime' and during the period of SMB pulse injection into the HL-2A plasma the power density eonvected at the target plate surfaces was 0.4 times of that before or after the beam injection. It is a useful fuelling method for decreasing the heat load on the neutralizer plates of the divertor.
基金Supported by the National Basic Research Program of China under Grant Nos 2015CB351902,2015CB932402 and 2012CB619203the National Natural Science Foundation of China under Grant Nos 61177070,11374295 and U1431231the National Key Research Program of China under Grant No 2011ZX01015-001
文摘Type-Ⅱ InAs/GaSb superlattiees made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice (SL) structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.
基金Project supported by the Beijing Scholars Program(Grant No.74A2111113)the Research Project of Beijing Education Committee(Grant No.KM202111232019)+1 种基金the National Natural Science Foundation of China(Grant No.62105039)the Research Project of Beijing Information Science&Technology University(Grant No.2022XJJ07)
文摘We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.
基金supported by the National Natural Science Foundation of China(Nos.61474073,61874069 and 61804157).
文摘The ultrahigh vacuum scanning tunneling microscope(STM)was used to characterize the GaSb_(1-x)Bi_(x) films of a few nanometers thickness grown by the molecular beam epitaxy(MBE)on the GaSb buffer layer of 100 nm with the GaSb(100)substrates.The thickness of the GaSb_(1-x)Bi_(x) layers of the samples are 5 and 10 nm,respectively.For comparison,the GaSb buffer was also characterized and its STM image displays terraces whose surfaces are basically atomically flat and their roughness is generally less than 1 monolayer(ML).The surface of 5 nm GaSb_(1-x)Bi_(x) film reserves the same terraced morphology as the buffer layer.In contrast,the morphology of the 10 nm GaSb_(1-x)Bi_(x) film changes to the mound-like island structures with a height of a few MLs.The result implies the growth mode transition from the two-dimensional mode as displayed by the 5 nm film to the Stranski-Krastinov mode as displayed by the 10 nm film.The statistical analysis with the scanning tunneling spectroscopy(STS)measurements indicates that both the incorporation and the inhomogeneity of Bi atoms increase with the thickness of the GaSb_(1-x)Bi_(x) layer.
文摘This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm^2 has been obtained for diodes with AlAs barriers of ten monolayers, and an Ino.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61390501,61622116,and 61471337)the Science Fund from the Chinese Academy of Sciences(CAS)(Grant Nos.XDPB0601 and XDPB0801)the CAS Pioneer Hundred Talents Program,and the Beijing Nova Program(Grant No.Z181100006218023)
文摘PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the inter- play between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spec- troscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.
文摘A series of metamorphic high electron mobility transistors (MMHEMTs) with different Ⅴ/Ⅲ flux ratios are grown on CaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/(V.s) and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774130,11474248,61790581,and 51973070)the Ph.D.Program Foundation of the Ministry of Education of China(Grant No.20105303120002)the National Key Technology Research and Development Program of China(Grant No.2018YFA0209101)。
文摘A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.
基金the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61974065)the Fundamental Research Funds for the Central Universities,China(Grant No.14380166)+3 种基金Key R&D Program of Jiangsu Province,China(Grant No.BE2020004-3)the National Key R&D Program of China(Grant No.2017YFB0404101)Nature Science Foundation of Jiangsu Province,China(Grant No.BE2015111)Collaborative Innovation Center of Solid State Lighting and Energysaving Electronics.
文摘A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.
基金financially supported by the Science Foundation for International Cooperation of Sichuan Province (2014HH0016)the Fundamental Research Funds for the Central Universities (SWJTU2014: A0920502051113-10000)National Magnetic Confinement Fusion Science Program (2011GB112001)
文摘In this study, finite element analysis (FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular stream peak at different positions along the center axis of the beam, which correspond to local minimums of the molecular densities. With the increase of the throat diameter, the first peak of the Mach number increases first and then decreases, while that of the molecular number density increases gradually. Moreover, both first peaks shift progressively away from the throat. At the last part, we discuss the possible applications of our FEA approach to solve some crucial problems met in modern transportations.
文摘AlxIn1-xAs with 0.47&lex&le0.62 onto (100) oriented InP substrate was grown by molecular beam epitaxy (MBE) and characterized with X-ray double crystal diffraction, low temperature photoluminescence and an electron probe. Results show their high qualities. Strain and residual stress were studied in detail.
基金Project supported by the National Key Research and Development Program of the MOST of China(Grant No.2016YFA0300204)the National Key Basic Research Program of China(Grant No.2015CB654901)+2 种基金the National Natural Science Foundation of China(Grant Nos.11574337,11227902,11474147,and11704394)Shanghai Sailing Program(Grant No.17YF1422900)the Award for Outstanding Member in Youth Innovation Promotion Association of the Chinese Academy of Sciences
文摘Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is also predicted to have a lattice-symmetrically protected topological state in the (110) plane due to its strong: spin-orbil coupling and electron correlation. Compared with non-polar (001)-SflrO3, the especial polarity of (110)-SrIrC)3 undoubtedly adds the: difficulty of fabrication and largely impedes the research on its surface states. Here, we have successfully synthesized high-quality (110)-SflrO3 thin films on (110)-SrTiO3 substrates by reactive molecular beam epitaxy fi^r the first time. Both reflec- tion high-energy electron diffraction pattems and x-ray diffraction measurements suggest the expected orientation and outstanding crystallinity. A (1 × 2) surface reconstruction driven from the surface instabiJity, the. same as that reported in (110)-SrTiO3, is observed. The electric transport measurements uncover that (110)-SrIrO3 exhibits a more prominent semimetallic property in comparison to (001)-SrIrO3.
基金Funded by the Guangxi Natural Science Foundation (No.0731005)the Open Foundation of the Key Lab of New Processing Technology for Nonferrous Metals and Materials (No.6XKFJ-06)
文摘Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE),and their properties of structure and resistivity with varying N2 pressure were investigated.The results showed that atomically flat TiN films with layer-by-layer growth mode were successfully grown on Si(100) substrates,and (200) was the preferred orientation.With the increasing of N2 pressure,the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle.At pressure of 0.1 Pa,stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane.All films showed high reflectance to infrared spectrum and the films with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion,while the stoichiometric TiN film depicted the minimum resistivity,around 19 μΩ·cm.
基金supported by the National Natural Science Foundation of Chinathe National Basic Research Program of China
文摘Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.