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Epitaxial growth and thermal-conductivity limit of singlecrystalline Bi2Se3/In2Se3 superlattices on mica 被引量:2
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作者 Wuyang Ren Handong Li +7 位作者 Lei Gao Yong Li Zhongyang Zhang Chengjia Long Haining Ji Xiaobin Niu Yuan Lin Zhiming Wang 《Nano Research》 SCIE EI CAS CSCD 2017年第1期247-254,共8页
Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In... Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 (BS/IS) superlattices with minimized defects are prepared on fluorophlogopite mica by molecular beam epitaxy. The cross-plane heat-conducting properties of the BS/IS superlattices are demonstrated to depend precisely on the period thicknesses and constituents of the superlattices, where a minimum in the thermal conductivity indicates a crossover from particle-like to wave-like phonon transport in the superlattices. The thermal-conductivity minimum of the BS/IS superlattices is nearly one order of magnitude lower than that of intrinsic BS film. 展开更多
关键词 molecular beam epitaxy bi2se3 in2se3 superlattice thermal conductivity
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