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Oxidation behavior of CVI,MSI and CVI+MSI C/SiC composites 被引量:2
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作者 闫志巧 陈峰 +3 位作者 熊翔 肖鹏 张红波 黄伯云 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2010年第4期590-596,共7页
The oxidation behavior of chemical vapor infiltration(CVI),molten silicon infiltration(MSI)and CVI+MSI C/SiC composites at 500-1 400℃was studied.The oxidation below 900℃increased successively for CVI,CVI+MSI and MSI... The oxidation behavior of chemical vapor infiltration(CVI),molten silicon infiltration(MSI)and CVI+MSI C/SiC composites at 500-1 400℃was studied.The oxidation below 900℃increased successively for CVI,CVI+MSI and MSI composites.However,the oxidation of CVI composite above 1 000 ℃was much faster thanthat of MSI and CVI+MSI composites. As active carbon atoms produced by siliconization of fibers during MSI process were oxidized first and decreased initial oxidation temperature.The initial oxidation temperature of MSI,MSI+CVI and CVI composites was 526,552 and 710℃,respectively.New active carbon atoms were generated due to the breaking of 2D molecular chains during oxidation,so the activation energy of three C/SiC composites was decreased gradually at 500-800℃with oxidation process,exhibiting a self-catalytic characteristic. 展开更多
关键词 chemical vapor infiltration(CVI) molten silicon infiltration(MSI) C/SiC composites OXIDATION
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