Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The...Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.展开更多
High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency（RF） magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycry...Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency（RF） magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10^-4.cm,with a high Hall mobility of 30 cm^2.V-1.s-1 and a carrier concentration of 2.3×10^20 cm^-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.展开更多
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at ...Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.展开更多
Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The struc...Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.展开更多
ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. ...ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films wer e investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductiv ity measurement and scanning electron microscopy. Only the strong 002 peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films wa s found to alter the film's microstructure and properties, including crystallini ty, porosity, grain size, internal stress level and resistivity. It was also fou nd that after annealing, the conductivity of poorly conductive samples often imp roved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films can be decre ased from 102 to 10-4Ω·cm after annealing in nitrogen. To explain the effects of annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cau se diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films, which may decrease the resistiv ity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.展开更多
Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between tar...Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.展开更多
IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99...IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.展开更多
Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic prope...Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.展开更多
Tungsten-doped zinc oxide（ZnO：W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure i...Tungsten-doped zinc oxide（ZnO：W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO：W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^（-4）Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.展开更多
Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol t...Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol terephthalate, PET） by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/（V·s） and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.展开更多
Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of a...Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.展开更多
Transparent conducting molybdenum-doped zinc oxide （MZO） films were successfully prepared by radio frequency （RF） magnetron sputtering method on glass substrates under different substrate temperatures. The nature ...Transparent conducting molybdenum-doped zinc oxide （MZO） films were successfully prepared by radio frequency （RF） magnetron sputtering method on glass substrates under different substrate temperatures. The nature of MZO film is polycrystalline with hexagonal structure and a preferred orientation along c-axis. With increasing substrate temperature from room temperature to 400℃, the crystallinity of the films is deteriorated and the resistivity increases sharply due to both the decrease of carrier concentration and Hall mobility. The lowest resistivity achieved is 9.2×10^-4 Ω· cm with a high Hall mobility of 30 cm^2·V^-1·s^-1 for the film deposited at room temperature. The average transmttance in the visible range exceeds 85% for all the samples. The optical band gap decreases from 3.30 to 3.25 eV with substrate temperature from room temperature to 400℃.展开更多
High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 ...High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scanning electron microscope(SEM)and Hall and transmittance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear programming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85%in the visible range and a low resistivity of 2.4×10^(−3)Ω·cm and can thus be used as a transparent electrode.展开更多
Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target mate...Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.展开更多
基金Project supported by the National Key Basic Research and Development Programme of China （Grant No 2001CB610504） and the National Natural Science Foundation of China （Grant Nos 60576039 and 10374060）.Acknowledgments We thank Dr Wang Zhuo and Dr Yang ChangHong for their assistance in the experiment.
文摘Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
基金Project supported by the Science Foundation of the Education Commission of Shandong Province,China (Grant No. J10LA04)
文摘Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency（RF） magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10^-4.cm,with a high Hall mobility of 30 cm^2.V-1.s-1 and a carrier concentration of 2.3×10^20 cm^-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.
文摘Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.
基金supported by the National Key Basic Research and Development Programme of China(No.2001CB610504)the National Natural Science Foundation of China(Grant No.60576039,10374060).
文摘Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.
基金This work was supported by New Zealand Foundation for Research,Science and Technology(Top Achiever Doctoral Scholarship)Australian Institute of Nuclear Science and Engineering(Postgraduate Award).The authors would also like to thank Mrs.Catherine Hobbis for technical support.
文摘ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films wer e investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductiv ity measurement and scanning electron microscopy. Only the strong 002 peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films wa s found to alter the film's microstructure and properties, including crystallini ty, porosity, grain size, internal stress level and resistivity. It was also fou nd that after annealing, the conductivity of poorly conductive samples often imp roved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films can be decre ased from 102 to 10-4Ω·cm after annealing in nitrogen. To explain the effects of annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cau se diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films, which may decrease the resistiv ity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.
文摘Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.
基金supported by the Ministry of Education,Science Technology (MEST) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Regional Innovation
文摘IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
基金supported by the National Natural Science Foundation of China(No.11504436)the Natural Science Foundation of Hubei Province(No.2015CFB364)the Fundamental Research Funds for the Central Universities(Nos.CZW14019 and CZW15045)
文摘Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.
基金Project supported by the Natural Science Foundation of Shandong Province,China(NoZR2009GQ011)
文摘Tungsten-doped zinc oxide（ZnO：W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO：W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^（-4）Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.
文摘Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol terephthalate, PET） by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/（V·s） and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.
文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
基金supported by the Natural Science Foun-dation of China (Grant Nos 60676041 and 10778701)
文摘Transparent conducting molybdenum-doped zinc oxide （MZO） films were successfully prepared by radio frequency （RF） magnetron sputtering method on glass substrates under different substrate temperatures. The nature of MZO film is polycrystalline with hexagonal structure and a preferred orientation along c-axis. With increasing substrate temperature from room temperature to 400℃, the crystallinity of the films is deteriorated and the resistivity increases sharply due to both the decrease of carrier concentration and Hall mobility. The lowest resistivity achieved is 9.2×10^-4 Ω· cm with a high Hall mobility of 30 cm^2·V^-1·s^-1 for the film deposited at room temperature. The average transmttance in the visible range exceeds 85% for all the samples. The optical band gap decreases from 3.30 to 3.25 eV with substrate temperature from room temperature to 400℃.
基金financially supported by the National Natural Science Foundation of China(Nos.50942021,50975301)。
文摘High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scanning electron microscope(SEM)and Hall and transmittance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear programming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85%in the visible range and a low resistivity of 2.4×10^(−3)Ω·cm and can thus be used as a transparent electrode.
文摘Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.
