When preparing large monocrystalline silicon materials,severe carbon etching and silicide deposition often occur to the thermal system.Therefore,a suppression method that optimizes the upper insulation structure has b...When preparing large monocrystalline silicon materials,severe carbon etching and silicide deposition often occur to the thermal system.Therefore,a suppression method that optimizes the upper insulation structure has been proposed.Assisted by the finite element method,we calculated temperature distribution and carbon deposition of heater and heat shield,made the rule of silicide and temperature distributing in the system,and we explained the formation of impurity deposition.Our results show that the optimized thermal system reduces carbon etching loss on heat components.The lowered pressure of the furnace brings a rapid decrease of silicide deposition.The increase of the argon flow rate effectively inhibits CO and back diffusion.The simulated results agree well with the experiment observations,validating the effectiveness of the proposed method.展开更多
To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and disl...To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.展开更多
An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the cry...An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.展开更多
A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）i...A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）is proved to be good linear,high precision and less that can fetch precise data in low pressure range even near by O point,which guarantees the reliability of the soil pressure test in geotechnical engineering.展开更多
The thermal radiation properties of pyrolytic carbon(PyC)protective coatings for monocrystalline silicon furnace prepared by different processes were tested.The changes of normal emissivity of carbon materials caused ...The thermal radiation properties of pyrolytic carbon(PyC)protective coatings for monocrystalline silicon furnace prepared by different processes were tested.The changes of normal emissivity of carbon materials caused by PyC protective coatings were discussed,and the influence of phase structure and surface appearance on the thermal radiation properties was investigated.The results show that the thermal radiation properties of PyC protective coatings with the wave band of 5-25μm are better than C/C substrate,further,normal spectral emissivity of CVD PyC coating remains basically at 0.85-0.90,and the normal total emissivity can reach0.89,which shows high thermal radiation performance.For resin PyC coating and CVD PyC coating,the degree of graphitization are 44.53%and 16.28%respectively,and the R value of Raman spectrum are 0.964and 1.384 respectively.Relatively disorder graphite structure of the latter causes various vibration modes,and the spectral emissivity is better,so the thermal radiation property of CVD PyC coating is excellent.A lot of spherical particles exists on the surface of the CVD PyC coating,and the more interface and spacing of particles reduce the number of particles per unit volume.Therefore,the scattering of thermal radiation is strongly strengthened,and the spectral emissivity is higher.展开更多
Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantatio...Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.展开更多
The structure characteristics of ID precision ultrathin monocrystalline silicon section cutting machine tool spindle with force monitoring bearings functioning as force measuring sensors were detected with the new H...The structure characteristics of ID precision ultrathin monocrystalline silicon section cutting machine tool spindle with force monitoring bearings functioning as force measuring sensors were detected with the new Hilbert theory based signal wave envelope detection method, presented to replace the conventional hardware device in order to ensure that the signal is measured online with high fidelity. According to the probability of anomalous incidents in the cutting process, a mathematical recognition model has been designed and verified on an STC 22ID machine.展开更多
The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the pa...The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (V<sub>oc</sub>) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained V<sub>OC</sub> in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (V<sub>OC</sub>), the short circuit current (J<sub>SC</sub>), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).展开更多
基金supported by the National Natural Science Foundation of China(No.61533014)the Natural Science Foundation of Shaanxi Province(No.2019JQ-734)。
文摘When preparing large monocrystalline silicon materials,severe carbon etching and silicide deposition often occur to the thermal system.Therefore,a suppression method that optimizes the upper insulation structure has been proposed.Assisted by the finite element method,we calculated temperature distribution and carbon deposition of heater and heat shield,made the rule of silicide and temperature distributing in the system,and we explained the formation of impurity deposition.Our results show that the optimized thermal system reduces carbon etching loss on heat components.The lowered pressure of the furnace brings a rapid decrease of silicide deposition.The increase of the argon flow rate effectively inhibits CO and back diffusion.The simulated results agree well with the experiment observations,validating the effectiveness of the proposed method.
基金partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy,Trade and Industry (METI),Japan
文摘To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
文摘An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.
文摘A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device.The experimental result shows that the soil pressure min-sensor made of the monocrystalline silicon（SPMMS）is proved to be good linear,high precision and less that can fetch precise data in low pressure range even near by O point,which guarantees the reliability of the soil pressure test in geotechnical engineering.
基金Sponsored by the National High Technology Research and Development Program of China(863 Program)(Grant No.2009AA035301)the ChinaPostdoctoral Science Foundation(Grant No.2012M511544)
文摘The thermal radiation properties of pyrolytic carbon(PyC)protective coatings for monocrystalline silicon furnace prepared by different processes were tested.The changes of normal emissivity of carbon materials caused by PyC protective coatings were discussed,and the influence of phase structure and surface appearance on the thermal radiation properties was investigated.The results show that the thermal radiation properties of PyC protective coatings with the wave band of 5-25μm are better than C/C substrate,further,normal spectral emissivity of CVD PyC coating remains basically at 0.85-0.90,and the normal total emissivity can reach0.89,which shows high thermal radiation performance.For resin PyC coating and CVD PyC coating,the degree of graphitization are 44.53%and 16.28%respectively,and the R value of Raman spectrum are 0.964and 1.384 respectively.Relatively disorder graphite structure of the latter causes various vibration modes,and the spectral emissivity is better,so the thermal radiation property of CVD PyC coating is excellent.A lot of spherical particles exists on the surface of the CVD PyC coating,and the more interface and spacing of particles reduce the number of particles per unit volume.Therefore,the scattering of thermal radiation is strongly strengthened,and the spectral emissivity is higher.
基金Supported by the National Basic Research Program of China("973" Program,No.2011CB706703)
文摘Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.
文摘The structure characteristics of ID precision ultrathin monocrystalline silicon section cutting machine tool spindle with force monitoring bearings functioning as force measuring sensors were detected with the new Hilbert theory based signal wave envelope detection method, presented to replace the conventional hardware device in order to ensure that the signal is measured online with high fidelity. According to the probability of anomalous incidents in the cutting process, a mathematical recognition model has been designed and verified on an STC 22ID machine.
文摘The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (V<sub>oc</sub>) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained V<sub>OC</sub> in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (V<sub>OC</sub>), the short circuit current (J<sub>SC</sub>), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).
