Monolithic edge-cladding process for the elliptical disk of N31-type Nd-doped high-power laser glass

This paper investigates the monolithic edge-cladding process for the elliptical disk of N31-type Nd-doped phosphate laser glass,which will be utilized under liquid cooling conditions for high-power laser systems.The thermal stress,interface bubbles and residual refiectivity,which are due to high-temperature casting and bonding during the monolithic edge-cladding process,are simulated and determined.The applied mould is optimized to a rectangular cavity mould,and the casting temperature is optimized to 1000℃.The resulting lower bubble density makes the mean residual refiectivity as low as 6.75×10^(-5),which is enough to suppress the amplified spontaneous emission generated in the Nd-glass disk,and the resulting maximum optical retardation is converged to 10.2–13.3 nm/cm,which is a favourable base for fine annealing to achieve the stress specification of less than or equal to 5 nm/cm.After fine annealing at the optimized 520℃,the maximum optical retardation is as low as 4.8 nm/cm,and the minimum transmitted wavefront peak-to-valley value is 0.222 wavelength(632.8 nm).An N31 elliptical disk with the size of 194 mm×102 mm×40 mm can be successfully cladded by the optimized monolithic edge-cladding process,whose edge-cladded disk with the size of 200 mm×108 mm×40 mm can achieve laser gain one-third higher than that of an N21-type disk of the same size.

A 256 Gb/s electronic−photonic monolithically integrated transceiver in 45 nm CMOS

With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.

Hybrid Strategy of Partitioned and Monolithic Methods for Solving Strongly Coupled Analysis of Inverse and Direct Piezoelectric and Circuit Coupling

The inverse and direct piezoelectric and circuit coupling are widely observed in advanced electro-mechanical systems such as piezoelectric energy harvesters.Existing strongly coupled analysis methods based on direct numerical modeling for this phenomenon can be classified into partitioned or monolithic formulations.Each formulation has its advantages and disadvantages,and the choice depends on the characteristics of each coupled problem.This study proposes a new option:a coupled analysis strategy that combines the best features of the existing formulations,namely,the hybrid partitioned-monolithic method.The analysis of inverse piezoelectricity and the monolithic analysis of direct piezoelectric and circuit interaction are strongly coupled using a partitioned iterative hierarchical algorithm.In a typical benchmark problem of a piezoelectric energy harvester,this research compares the results from the proposed method to those from the conventional strongly coupled partitioned iterative method,discussing the accuracy,stability,and computational cost.The proposed hybrid concept is effective for coupled multi-physics problems,including various coupling conditions.

Electrochemically Deposited CZTSSe Thin Films for Monolithic Perovskite Tandem Solar Cells with Efficiencies Over 17%

In spite of the high potential economic feasibility of the tandem solar cells consisting of the halide perovskite and the kesterite Cu2ZnSn(S,Se)4(CZTSSe),they have rarely been demonstrated due to the difficulty in implementing solution-processed perovskite top cell on the rough surface of the bottom cells.Here,we firstly demonstrate an efficient monolithic two-terminal perovskite/CZTSSe tandem solar cell by significantly reducing the surface roughness of the electrochemically deposited CZTSSe bottom cell.The surface roughness(R_(rms))of the CZTSSe thin film could be reduced from 424 to 86 nm by using the potentiostatic mode rather than using the conventional galvanostatic mode,which can be further reduced to 22 nm after the subsequent ion-milling process.The perovskite top cell with a bandgap of 1.65 eV could be prepared using a solution process on the flattened CZTSSe bottom cell,resulting in the efficient perovskite/CZTSSe tandem solar cells.After the current matching between two subcells involving the thickness control of the perovskite layer,the best performing tandem device exhibited a high conversion efficiency of 17.5%without the hysteresis effect.

Surface-functionalized hole-selective monolayer for high efficiency single-junction wide-bandgap and monolithic tandem perovskite solar cells

Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.

A monolithic integrated medium wave Mercury Cadmium Telluride polarimetric focal plane array

A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.

A Monolithic Integrated CMOS Thermal Vacuum Sensor

The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.

RELEASE KINETICS OF MONOLITHIC MATRIX COATED WITH OUTER MEMBRANE SYSTEM

The reservoir-monolithic type of the controlled release systems is investigated currently,however,the existing kinetic model could not describe the release process well because the release kinetics is rather complicated.In this paper,a simplified release kinetic model for diffusion-controlled monolithic matrix coated with outer membrane systems is proposed and verified by the experimental data of mercaptopurinum release experiment.It shows that the model can well describe the release mechanism (the relative error is under 3%) when drug loading (C d) is above its solubility limit (C s).At the same time,the release characteristics of special cases (D mD f and D mD f) are discussed theoretically.When D mD f the release rate becomes constant,namely,zero order release,and the release rate is independent of the drug membrane.This result provides the theoretical basis for the system of zero order release as well as how to control the release rate and the amount of drug release.When D mD f,the release rate is dependent on the drug release coefficient in the monolithic matrix,solubility and drug loading but independent of the process in the outer membrane,and it is similar to monolithic matrix type.

Strongly Gain Coupled DFB Laser Monolithically Integrated with a Self Alignment Spot Size Converter

A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.

Monolithic特征标的零点与可解群的导长

给出了分别满足条件(M1)G的monolithic特征标没有公共的零点;(M2)G的非线性不可约monolithic特征标中最多有两个有公共的零点,的有限群的一个导长的上界.

Monolithic特征标的核-余-次数对群结构的影响

正整数|G:Ker(χ)|／χ(1)叫作不可约特征标χ的核-余-次数．考察了不可约特征标或Monolithic特征标的核-余-次数的算术结构对群的结构的影响．

Co-Design of Monolithically Integrated Photo-Detector and Optical-Receiver

A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.

Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

2.5 Gbit/s monolithic ICs for optical fiber transmitter and receiver in 0.35 μm CMOS process

2.5 Gbit/s monolithic integrated circuits （ICs） for optical fiber transmitter and receiver in 0.35 μm CMOS （complementary metal-oxide-semiconductor transistor） process are presented. The transmitter, which includes a 4： 1 multiplexer and a laser diode driver （LDD）, has four 622 Mbit/s random signals as its inputs and gets a 2.5 Gbit/s driving signal as its output; the receiver detects a 2.5 Gbit/s random signal and gets four 622 Mbit/s signals at the output. The main circuits include a trans-impedance amplifier （TIA）, a limiting amplifier, a clock and data recovery （CDR） unit, and a 1： 4 demultiplexer （DEMUX）. Test results prove the logic functions of the transmitter to be right, and the 10% to 90% rise and fall times of transmitter＇s output data eye diagram are 211.1 ps and 200 ps, respectively. The sensitivity of the receiver is measured to be better than 20 mV. The root mean square jitter of the DEMUX＇s output data is 15.6 ps and that of the clock after 1： 4 frequency dividing is 1.9 ps. Two chips are both applicable to 2.5 Gbit/s optical fiber communication systems.

MATHEMATICAL ANALYSIS OF DRUG RELEASE FROM A MONOLITHIC MATRIX WITH AN INITIALLY LINEAR CONCENTRATION DISTRIBUTION

Based on the principle of chemical engineering in the multisubject field—drug delivery, the release kinetics of the slab monolithic matrix with an initially linear concentration distribution is studied in this paper. It can be used to describe the later stage when drug loading is above its solubility limit. A comprehensive model is proposed and the generalized solutions are acquired by Laplace transformation, from which a special case, i.e. a perfect sink has been deduced. According to the derived equations, the concentration profiles in the matrix has been computed and illustrated and the effect of volume of extraction medium on release has been investigated.

AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0 121℃/W.The pitch between two adjacent bars is 1 17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

Study on Machining Deformation of Aircraft Monolithic Component by FEM and Experiment

Machining deformation of aircraft monolithic component is simulated by finite element method （FEM） and validated by experiment. The initial residual stress in pre-stretched plate is generated by simulating quenching and stretching processes. With a single tool-tooth milling process FEM, the machining loads in monolithic component material removing is obtained. Restart-calculation is put forward to complete the whole simulation of machining process. To verify the FEM result, an experiment is carried out. The deformation distribution of the monolithic component resulting from FEM shows a good agreement with the experiment result, which indicates that the key technologies presented in the paper are practicable and can be used to simulate the milling process of monolithic component to predict its deformation. Lengthy and expensive trial and error experiment process can be avoided.

Chiral separation by (S)-naproxen imprinted monolithic column with mixed functional monomers

Molecularly imprinted polymers （MIPs）, using （S）-naproxen as template and the combination of butyl methacrylate （BMA） and MAA （1：1 molar ratio） as functional monomers were synthesized by an in situ polymerization reaction. The rendered monolithic column was evaluated in HPLC mode. The result showed that the monolithic MIPs with the combination of two monomers produced better chiral resolution of rac-naproxen （Rs = 1.55） and column efficiencies of imprinted molecules （N = 2860 plates/m） than that with pure MAA.

Catalytic combustion of toluene over Pd-based monolithic catalysts with a novel washcoat Ce_(0.8)Zr_(0.15)La_(0.05)O_δ

Two novel washcoats Ce0.8Zr0.15La0.05Oδ and Ce0.8Zr0.2O2 was prepared by an impregnation method, which acted as a host for the active Pd component to prepare Pd/Ce0.8Zr0.15La0.05Oδ/substrate and Pd/Ce0.8Zr0.2O2/substrate monolithic catalysts for toluene combustion. The washcoats was characterized by X-ray diffraction (XRD), Raman spectroscopy, Brunauner-Emmett-Teller (BET), and H2-temperature-programmed reduction (H2-TPR). The result indicated that both the washcoats had strong vibration-shock resistance according to ultrasonic test. Doping La3+ into CeO2-ZrO2 solid solution could generate more oxygen vacancies, and could inhibit the sinter of CeO2-ZrO2 solid solution when calcined at high temperatures (800, 900 and 1000 °C). The washcoat Ce0.8Zr0.15La0.05Oδ had much better redox properties. The reductive temperature of Ce4+ species shifted to low temperature by 60 °C when the washcoats calcined at high temperatures (800, 900 and 1000 °C). The Pd/Ce0.8Zr0.15La0.05Oδ/substrate monolithic catalyst calcination at 500 °C had the best catalytic activity and the 95% toluene conversion at a temperature as low as 190 °C. When calcined at low temperature (500 and 700 °C), the catalytic activity has little improvement, however, when calcined at high temperature, the catalytic activity of Pd/Ce0.8Zr0.15La0.05Oδ/substrate monolithic catalysts had significant improvement. As catalyst washcoat, the Ce0.8Zr0.15La0.05Oδ had better thermal stability than the washcoat Ce0.8Zr0.2O2, the developed Pd/Ce0.8Zr0.15La0.05Oδ/ substrate monolithic catalyst in this work was promising for eliminating Volatile organic compounds.