Co-Design of Monolithically Integrated Photo-Detector and Optical-Receiver

A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.

Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Strongly Gain Coupled DFB Laser Monolithically Integrated with a Self Alignment Spot Size Converter

A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.

Monolithically Integrated Photonic Structures for Stable On-Chip Solar Blind Communications

A solar-blind multi-quantum well(MQW)structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition(MOCVD).The monolithically integrated photonic chips including light-emitting diodes(LEDs),waveguides,and photodetec-tors(PDs)are presented.The results of the finite-difference time-domain(FDTD)simulation confirm the strong light constraint of the wave-guide designed with the triangular structure in the optical coupling region.Furthermore,in virtue of predominant ultraviolet transverse mag-netic(TM)modes,the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip.The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs.When the LEDs are operated at 100 mA current,the photo-to-dark current ratio(PDCR)of the integrated PD is about seven orders of magnitude.The responsivity,specific detectivity,and external quantum efficiency of the integrated self-driven PD are 74.89 A/W,4.22×1013 Jones,and 3.38×104%,respectively.The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.

Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Prot filter

A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot （F-P） filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm （1558 and 1 577 nm）. The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectively

Technology challenges for monolithically integrated waveguide demultiplexers

A short overview of integrated waveguide demultiplexers for different applications in future highly integrated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire technology are described.

A 1.55-μm laser array monolithically integrated with an MMI combiner

The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4× 1 multimode-interference （MMI） optical combiner using the varied width ridge method is proposed and demonstrated. The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30-35 mA at 25 ℃. The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained. The four channels can operate separately or simultaneously.

A monolithic integrated medium wave Mercury Cadmium Telluride polarimetric focal plane array

A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.

A Monolithic Integrated CMOS Thermal Vacuum Sensor

The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.

Improving Characteristics of Integrated Switched-Capacitor DC-DC Converter by CMOS Technology

An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices,and mutually compensatory circuitry technology is also employed to double the output current furthermore.The simulation results using Hspice simulation software,show that the output currents of a single unit circuit and two unit circuits connected in a mutually compensatory manner of the improved converter is about 12.5mA and 26mA,respectively.The power conversion efficiency of the mutually compensatory circuit can amount to 73%,while its output voltage ripple is less than 1.5%.The converter is fabricated in standard Rohm 0.35μm CMOS technology in Tokyo University of Japan.The test result indicates that the output current of 9.8mA can be obtained from a single unit circuit of the improved converter.

Monolithically Fabricated OEICs Using RTD and MSM

Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

A 330-500 GHz Zero-Biased Broadband Tripler Based on Terahertz Monolithic Integrated Circuits

A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier （SOA） is demon- strated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio （SMSR） exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure.Their characteristics are analyzed.The light emitters have high spectral purity of 4 8nm and high electroluminescence intensity of 0 7mW while injection current is 50mA.A 1×16 array of surface emitting light device is tested on line by probes and then used for module.The light detectors have wavelength selectivity and space selectivity.The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function with different load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinction ratio of over 7dB with a 95012 load resistor and a 7mW control light power at 622Mbit/s.

Broadband MMIC Power Amplifier for C-X-Ku-Band Applications

A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.