The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5&...The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.展开更多
基金supported by the National High-Technology Research and Development Program of China(Grant Nos.2008AA03A336,2010AA03A337)
文摘The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.
