The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the b...The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 10<sup>13</sup> cm<sup>-3</sup> - 10<sup>16</sup> cm<sup>-3</sup>, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.展开更多
库水位循环作用下,库岸边坡岩土体物理力学性质劣化,引起岸坡变形、滑移,将对桥梁基础、桥墩及上部结构产生不同程度损伤,甚至会导致桥梁上部结构落梁、垮塌。针对重庆万州长江二桥库岸边坡失稳致灾问题,采用FEM-SPH(finite element met...库水位循环作用下,库岸边坡岩土体物理力学性质劣化,引起岸坡变形、滑移,将对桥梁基础、桥墩及上部结构产生不同程度损伤,甚至会导致桥梁上部结构落梁、垮塌。针对重庆万州长江二桥库岸边坡失稳致灾问题,采用FEM-SPH(finite element method-smoothed particle hydrodynamics)转换耦合算法建立了岸坡-桥梁三维有限元模型,结合桥位处地质勘测数据模拟了变动水位条件下岸坡变形、滑移、失稳全过程,揭示了岸坡滑移与桥梁桩基相互作用机理,研究了桥墩偏位规律及下部结构失效模式。结果表明:以滑动带有限元网格悉数转换为SPH(smoothed particle hydrodynamics)粒子作为岸坡失稳判据,FEM-SPH转换耦合算法能够更直观、准确地模拟库岸边坡从变形、滑移至失稳全过程;桥位处岸坡将在第16、20次水位升降循环过程中发生失稳破坏;随着岸坡变形、滑移、失稳演化,桥墩偏位呈“缓增-激增”的变化趋势;岸坡发生第2次失稳时,桩基础在土-岩交界面上部发生剪切破坏,破坏面与水平面夹角约为60°。展开更多
文摘The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 10<sup>13</sup> cm<sup>-3</sup> - 10<sup>16</sup> cm<sup>-3</sup>, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.
