A new phase was found at the interface between Al film and Ni substrate when the time of ion-plating reaches 5 min.It was identified to be body centered tetragonal lattice with the constants a=b=0.588 nm,c=0.480 nm.Th...A new phase was found at the interface between Al film and Ni substrate when the time of ion-plating reaches 5 min.It was identified to be body centered tetragonal lattice with the constants a=b=0.588 nm,c=0.480 nm.The variation of microstructure and phases with the ion-plating time were observed.Based on these results,the ion-plating film formation mech- anism has been also discussed.展开更多
针对磁控溅射和阴极弧离子镀沉积技术存在的局限性,采用有限元分析方法(Finite element method,FEM)进行磁场模拟,优化设计外加电磁线圈的结构和磁场分布位形,并应用于磁控溅射沉积透明导电氧化物和阴极弧离子镀沉积硬质薄膜中。分析了...针对磁控溅射和阴极弧离子镀沉积技术存在的局限性,采用有限元分析方法(Finite element method,FEM)进行磁场模拟,优化设计外加电磁线圈的结构和磁场分布位形,并应用于磁控溅射沉积透明导电氧化物和阴极弧离子镀沉积硬质薄膜中。分析了外加电磁线圈磁场对磁控溅射等离子体辉光变化、磁控靶磁场平衡度/非平衡度、以及线圈位置对等离子体特性和靶材利用率的影响。设计和制作了轴对称磁场和旋转磁场,研究了它们对阴极弧离子镀弧斑运动形貌和薄膜表面大颗粒等特性的影响。通过控制弧斑运动状态,可以得到不同程度的颗粒分布,实现颗粒的可控沉积,减少薄膜表面大颗粒的污染。展开更多
文摘A new phase was found at the interface between Al film and Ni substrate when the time of ion-plating reaches 5 min.It was identified to be body centered tetragonal lattice with the constants a=b=0.588 nm,c=0.480 nm.The variation of microstructure and phases with the ion-plating time were observed.Based on these results,the ion-plating film formation mech- anism has been also discussed.
文摘针对磁控溅射和阴极弧离子镀沉积技术存在的局限性,采用有限元分析方法(Finite element method,FEM)进行磁场模拟,优化设计外加电磁线圈的结构和磁场分布位形,并应用于磁控溅射沉积透明导电氧化物和阴极弧离子镀沉积硬质薄膜中。分析了外加电磁线圈磁场对磁控溅射等离子体辉光变化、磁控靶磁场平衡度/非平衡度、以及线圈位置对等离子体特性和靶材利用率的影响。设计和制作了轴对称磁场和旋转磁场,研究了它们对阴极弧离子镀弧斑运动形貌和薄膜表面大颗粒等特性的影响。通过控制弧斑运动状态,可以得到不同程度的颗粒分布,实现颗粒的可控沉积,减少薄膜表面大颗粒的污染。
