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Incomplete charge transfer in CMOS image sensor caused by Si/SiO_(2)interface states in the TG channel
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作者 Xi Lu Changju Liu +4 位作者 Pinyuan Zhao Yu Zhang Bei Li Zhenzhen Zhang Jiangtao Xu 《Journal of Semiconductors》 EI CAS CSCD 2023年第11期101-108,共8页
CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in t... CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in the charge transfer path,which reduces the charge transfer efficiency and image quality.Until now,scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition.However,the existing models have thus far ignored the charge transfer limitation due to Si/SiO_(2)interface state traps in the transfer gate channel,particularly under low illumination.Therefore,this paper proposes,for the first time,an analytical model for quantifying the incomplete charge transfer caused by Si/SiO_(2)interface state traps in the transfer gate channel under low illumination.This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution,exponential distribution and measured distribution.The model was verified with technology computer-aided design simulations,and the results showed that the simulation results exhibit the consistency with the proposed model. 展开更多
关键词 CMOS image sensor charge transfer interface state traps
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Application of Zero-Watermarking for Medical Image in Intelligent Sensor Network Security
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作者 Shixin Tu Yuanyuan Jia +1 位作者 Jinglong Du Baoru Han 《Computer Modeling in Engineering & Sciences》 SCIE EI 2023年第7期293-321,共29页
The field of healthcare is considered to be the most promising application of intelligent sensor networks.However,the security and privacy protection ofmedical images collected by intelligent sensor networks is a hot ... The field of healthcare is considered to be the most promising application of intelligent sensor networks.However,the security and privacy protection ofmedical images collected by intelligent sensor networks is a hot problem that has attracted more and more attention.Fortunately,digital watermarking provides an effective method to solve this problem.In order to improve the robustness of the medical image watermarking scheme,in this paper,we propose a novel zero-watermarking algorithm with the integer wavelet transform(IWT),Schur decomposition and image block energy.Specifically,we first use IWT to extract low-frequency information and divide them into non-overlapping blocks,then we decompose the sub-blocks by Schur decomposition.After that,the feature matrix is constructed according to the relationship between the image block energy and the whole image energy.At the same time,we encrypt watermarking with the logistic chaotic position scrambling.Finally,the zero-watermarking is obtained by XOR operation with the encrypted watermarking.Three indexes of peak signal-to-noise ratio,normalization coefficient(NC)and the bit error rate(BER)are used to evaluate the robustness of the algorithm.According to the experimental results,most of the NC values are around 0.9 under various attacks,while the BER values are very close to 0.These experimental results show that the proposed algorithm is more robust than the existing zero-watermarking methods,which indicates it is more suitable for medical image privacy and security protection. 展开更多
关键词 Intelligent sensor network medical image ZERO-WATERMARKING integer wavelet transform schur decomposition
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A Low-Power-Consumption 9bit 10MS/s Pipeline ADC for CMOS Image Sensors 被引量:1
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作者 朱天成 姚素英 李斌桥 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1924-1929,共6页
A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifier... A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor. 展开更多
关键词 pipeline ADC low power design CMOS image sensor large signal processing range
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Numerical Simulation and Analysis of Bipolar Junction Photogate Transistor for CMOS Image Sensor
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作者 金湘亮 陈杰 仇玉林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第3期250-254,共5页
A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction p... A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue. 展开更多
关键词 bipolar junction photogate transistor PHOTODETECTOR CMOS image sensor
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A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique
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作者 刘宇 王国裕 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第2期313-317,共5页
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4... A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise (FPN) is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%. 展开更多
关键词 active pixel CMOS image sensor fill factor dynamic digital double sampling fixed pattern noise
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Dark output characteristic of γ-ray irradiated CMOS digital image sensors 被引量:5
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作者 MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084, China 《Rare Metals》 SCIE EI CAS CSCD 2002年第1期79-84,共6页
The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic par... The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given. 展开更多
关键词 CMOS digital image sensor gamma radiation dark output characteristic SI
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Weld pool image sensor for pulsed MIG welding 被引量:3
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作者 刘鹏飞 孙振国 +1 位作者 黄操 陈强 《China Welding》 EI CAS 2008年第1期1-5,共5页
Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the comp... Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device (CPLD) based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language (VHDL) and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired. 展开更多
关键词 pulsed MIG welding weld pool image visual image sensor controllable exposure
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Pixel and Column Fixed Pattern Noise Suppression Mechanism in CMOS Image Sensor 被引量:5
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作者 徐江涛 姚素英 李斌桥 《Transactions of Tianjin University》 EI CAS 2006年第6期442-445,共4页
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added... A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier. 展开更多
关键词 CMOS image sensor active pixel fixed pattern noise double sampling offset compensation
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High performance active image sensor pixel design with circular structure oxide TFT 被引量:1
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作者 Rui Geng Yuxin Gong 《Journal of Semiconductors》 EI CAS CSCD 2019年第2期29-32,共4页
We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode... We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures. 展开更多
关键词 a-IGZO TFT ACTIVE image sensor CIRCULAR structure high GAIN
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Fabrication of PdSe2/GaAs Heterojunction for Sensitive Near-Infrared Photovoltaic Detector and Image Sensor Application 被引量:3
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作者 Lin-bao Luo Xiu-xing Zhang +6 位作者 Chen Li Jia-xiang Li Xing-yuan Zhao Zhi-xiang Zhang Hong-yun Chen Di Wu Feng-xia Liang 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2020年第6期733-742,I0003,共11页
In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA... In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor. 展开更多
关键词 van der Waals heterojunction Two dimensional materials Near-infrared light photodetector image sensor RESPONSIVITY
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Area-Efficient Low Power CMOS Image Sensor Readout Circuit with Fixed Pattern Noise Cancellation 被引量:2
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作者 赵士彬 姚素英 +1 位作者 聂凯明 徐江涛 《Transactions of Tianjin University》 EI CAS 2010年第5期342-347,共6页
A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correl... A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi... 展开更多
关键词 imaging system image sensor low power electronic CAPACITOR operational amplifier fixed pattern noise bandwidth balance technology op-amp sharing
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A nano-metallic-particles-based CMOS image sensor for DNA detection 被引量:1
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作者 何进 苏艳梅 +5 位作者 马玉涛 陈沁 王若楠 叶韵 马勇 梁海浪 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期416-421,共6页
In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metal... In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source. 展开更多
关键词 CMOS image sensor nano-metallic particles DNA detection 0.5 gm CMOS process
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Modeling the photon counting and photoelectron counting characteristics of quanta image sensors 被引量:1
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作者 Bowen Liu Jiangtao Xu 《Journal of Semiconductors》 EI CAS CSCD 2021年第6期25-34,共10页
A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects o... A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs. 展开更多
关键词 CMOS image sensor quanta image sensor photon counting photoelectron counting signal error rate integration time
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A Plant Image Compression Algorithm Based on Wireless Sensor Network 被引量:1
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作者 Guiling Sun Yuanqiang Chu +1 位作者 Xiaochao Liu Zhihong Wang 《Journal of Computer and Communications》 2019年第4期53-64,共12页
This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, hig... This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, high-availability image compression algorithm. This algorithm mainly has two aspects of improvement measures: the first is to reduce the number of pixels that transmit images, from interlaced scanning to interlaced neighbor scanning;the second is to use JPEG image compression algorithm [1], changing the value of the quantization table in the algorithm [2]. After image compression, the image data volume is greatly reduced;the transmission efficiency is improved;and the problem of excessive data volume during image transmission is effectively solved. 展开更多
关键词 WIRELESS sensor Network JPEG QUANTIZATION TABLE image Transmission Algorithm
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Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution 被引量:2
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作者 张钰 逯鑫淼 +2 位作者 王光义 胡永才 徐江涛 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第7期164-170,共7页
The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random t... The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures. 展开更多
关键词 random telegraph signal noise physical and statistical model binomial distribution CMOS image sensor
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Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node 被引量:1
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作者 Cui Yang Guo-Liang Peng +4 位作者 Wei Mao Xue-Feng Zheng Chong Wang Jin-Cheng Zhang Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第1期593-599,共7页
A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping ... A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications. 展开更多
关键词 CMOS image sensor charge transfer efficiency high-speed charge transfer pinned photodiode
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An Approach to Star Map Simulation for Star Sensor Considering the Effect of Image Motion 被引量:1
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作者 Ai-Jun Li Chao-Shan Liu Xiao-fang Shen 《Optics and Photonics Journal》 2013年第2期108-111,共4页
To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotatio... To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotation of Starlight vector is studied. Secondly, with the help of the normal distribution of static star image energy model, introducing the star image motion speed, obtaining the energy distribution function of moving stars, implementing high dynamic simulation of star map. Finally, establishing the simulation environment, through adjusting input parameters such as integral time, rate of change of three attitude angle, the launch time, location, then, important simulation data of stars observed by star sensor in orbit can quickly be obtained, such as navigation stars information, value and direction of image motion, intensity distribution, signal to noise ratio. This work is very important to research and evaluate the star image motion compensation algorithm. 展开更多
关键词 STAR sensor image MOTION Model Simulation of STAR MAP
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Parametric study on contact sensors for MASW measurement-based interfacial debonding detection for SCCS
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作者 Chen Hongbing Pang Xin +3 位作者 Gan Shiyu Li Yuanyuan Gokarna Chalise Nie Xin 《Earthquake Engineering and Engineering Vibration》 SCIE EI CSCD 2024年第2期331-344,共14页
Steel-concrete composite structures(SCCS)have been widely used as primary load-bearing components in large-scale civil infrastructures.As the basis of the co-working ability of steel plate and concrete,the bonding sta... Steel-concrete composite structures(SCCS)have been widely used as primary load-bearing components in large-scale civil infrastructures.As the basis of the co-working ability of steel plate and concrete,the bonding status plays an essential role in guaranteeing the structural performance of SCCS.Accordingly,efficient non-destructive testing(NDT)on interfacial debondings in SCCS has become a prominent research area.Multi-channel analysis of surface waves(MASW)has been validated as an effective NDT technique for interfacial debonding detection for SCCS.However,the feasibility of MASW must be validated using experimental measurements.This study establishes a high-frequency data synchronous acquisition system with 32 channels to perform comparative verification experiments in depth.First,the current sensing approaches for high-frequency vibration and stress waves are summarized.Secondly,three types of contact sensors,namely,piezoelectric lead-zirconate-titanate(PZT)patches,accelerometers,and ultrasonic transducers,are selected for MASW measurement.Then,the selection and optimization of the force hammer head are performed.Comparative experiments are carried out for the optimal selection of ultrasonic transducers,PZT patches,and accelerometers for MASW measurement.In addition,the influence of different pasting methods on the output signal of the sensor array is discussed.Experimental results indicate that optimized PZT patches,acceleration sensors,and ultrasonic transducers can provide efficient data acquisition for MASW-based non-destructive experiments.The research findings in this study lay a solid foundation for analyzing the recognition accuracy of contact MASW measurement using different sensor arrays. 展开更多
关键词 steel-concrete composite structures(SCCS) interface debonding detection multi-channel analysis of surface waves(MASW) sensor selection comparative experimental study
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Time-dependent crosstalk effects for image sensors with different isolation structures
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作者 Lei Shen Li-Qiao Liu +2 位作者 Hao Hao Gang Du Xiao-Yan Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期640-644,共5页
Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends... Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode (PD) and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well. 展开更多
关键词 image sensor CROSSTALK pixel isolation
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Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor
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作者 Zhongjie Guo Ningmei Yu Longsheng Wu 《Journal of Semiconductors》 EI CAS CSCD 2019年第12期107-111,共5页
High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting t... High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting the technology of correlated double sample.A simple column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor is proposed in this paper.Based on the bottom plate sampling and fixed common level method,this novel design can avoid the offset nonuniformity between the two buffers.Also,the single buffer and switched capacitor technique can effectively suppress the charge sharing caused by the varied operating point.The proposed approach is experimentally verified in a 1024×1024 prototype chip designed and fabricated in 55 nm low power CMOS process.The measurement results show that the linear range is extended by 20%,the readout noise of bright and dark fields is reduced by 40%and 30%respectively,and the improved photo response nonuniformity is up to 1.16%.Finally,a raw sample image taken by the prototype sensor shows the excellent practical performance. 展开更多
关键词 CMOS image sensor column readout BUFFER offset mismatch charge sharing
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