The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequ...The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy （MBE） ,AIAs/lnx Ga1-x As/GaAs double barrier resonant tunneling structures （DBRTS） are grown on （100） semi-insulated （SI） GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approxi- mately a - 17.9kHz/MPa change.展开更多
Relaxation oscillations due to plasma instabilities at frequencies ranging from a few Hz to tens of kHz have been observed in various types of plasma processing discharges. Relaxation oscillations have been observed i...Relaxation oscillations due to plasma instabilities at frequencies ranging from a few Hz to tens of kHz have been observed in various types of plasma processing discharges. Relaxation oscillations have been observed in electropositive capacitive discharges between a powered anode and a metallic chamber whose periphery is grounded through a slot with dielectric spacers. The oscillations of time-varying optical emission from the main discharge chamber show, for example, a high-frequency （- 40 kHz） relaxation oscillation at 13.33Pa, with an absorbed power being nearly the peripheral breakdown power, and a low-frequency （- 3 Hz） oscillation, with an even higher absorbed power. The high-frequency oscillation is found to ignite plasma in the slot, but usually not in the peripheral chamber. The kilohertz oscillations are modelled using an electromagnetic model of the slot impedance, coupled to a circuit analysis of the system including the matching network. The model results are in general agreement with the experimental observations, and indicate a variety of behaviours dependent on the matching conditions. In low-pressure inductive discharges, oscillations appear in the transition between low-density capacitively driven and high-density inductively driven discharges when attaching gases such as SF6 and Ar/SF6 mixtures are used. Oscillations of charged particles, plasma potential, and light, at frequencies ranging from a few Hz to tens of kHz, are seen for gas pressures between 0.133 Pa and 13.33 Pa and discharge powers in a range of 75 1200 W. The region of instability increases as the plasma becomes more electronegative, and the frequency of plasma oscillation increases as the power, pressure, and gas flow rate increase. A volume-averaged （global） model of the kilohertz instability has been developed; the results obtained from the model agree well with the experimental observations.展开更多
Effective multiple optoelectronic feedback circuits for simultaneously suppressing low-frequency and relaxation oscillation intensity noise in a single-frequency phosphate fiber laser are demonstrated. The forward tra...Effective multiple optoelectronic feedback circuits for simultaneously suppressing low-frequency and relaxation oscillation intensity noise in a single-frequency phosphate fiber laser are demonstrated. The forward transfer function, which relates the laser output intensity to the pump modulations, is measured and analyzed. A custom two-path feedback system operating at different frequency bands is designed to adjust the pump current directly. The relative intensity noise is decreased by 20dB from 0.2 to 5kHz and over lOdB from 5 to lOkHz. The relaxation oscillation peak is suppressed by 22dB. In addition, a long term （24h） laser instability of less than 0.05% is achieved.展开更多
Both high and low frequency relaxation oscillations have been observed in an argon capacitive discharge connected to a peripheral grounded chamber through a slot with dielectric spacers. The oscillations, observed fro...Both high and low frequency relaxation oscillations have been observed in an argon capacitive discharge connected to a peripheral grounded chamber through a slot with dielectric spacers. The oscillations, observed from time-varying optical emission of the main discharge chamber, show, for example, a high frequency （46 kHz） relaxation oscillation at 100 mTorr, with an absorbed power near the peripheral breakdown, and a low frequency （2.7-3.7 Hz） oscillation, at a higher absorbed power. The high frequency oscillation is found to ignite a plasma in the slot, but usually not in the periphery. The high frequency oscillation is interpreted by using an electromagnetic model of the slot impedance, combined with the circuit analysis of the system including a matching network. The model is further developed by using a parallel connection of variable peripheral capacitance to analyse the low frequency oscillation. The results obtained from the model are in agreement with the experimental observations and indicate that a variety of behaviours are dependent on the matching conditions.展开更多
The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately...The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.展开更多
During initial studies of ECRH in the HL-1M tokamak, non-standard central MHD activities,such as saturated sawtooth, partially saturated sawtooth, double sawtooth, and the strong m = 1 bursts have been observed while ...During initial studies of ECRH in the HL-1M tokamak, non-standard central MHD activities,such as saturated sawtooth, partially saturated sawtooth, double sawtooth, and the strong m = 1 bursts have been observed while changing the heating location, the ECRH power, the plasma density. Complete suppression of sawtooth is achieved for the duration of the ECRH, when the heating power is applied on the high-field side of low-density plasma, and exceeds a threshold value of power. The m = 1 bursts riding on the ramp phase of sawtooth can only be excited when the ECRH location is near the q = 1 surface on the high field side. The conditions under which the various relaxation activities are produced or suppressed are described. Experimental results imply that the energetic electrons generated during ECRH are responsible for the modification/or stabilization/or excitation of the instability. Near the q = 1 surface, the passing electrons play the role of reducing the shear and tending to stabilize the sawtooth activity, while the barely-trapped electrons play the role of enhancing or driving an internal kink instability.展开更多
Dynamic mechanical relaxation processes,particularly secondary relaxation processes,are closely related to the mechanical and physical properties of metallic glasses.Here the effect of oscillation strain amplitude on ...Dynamic mechanical relaxation processes,particularly secondary relaxation processes,are closely related to the mechanical and physical properties of metallic glasses.Here the effect of oscillation strain amplitude on the secondary relaxation of a typical Labased metallic glass was studied using the dynamic mechanical analysis method.The apparent activation energy of theβrelaxation is shown to increase with the oscillation strain amplitude.When it changes from 0.02%to 0.16%,the activation energy increases from 0.73 to 0.96 eV.Simultaneously,the intensity of theβrelaxation shifts toward high temperature.Additionally,the apparentβrelaxation is found to be sensitive to the physical aging below the glass transition temperature.The findings suggest a correlation between the inelastic deformation and the relaxation behavior of amorphous metals.展开更多
Resistance-to-time converter is always used for digital temperature measurement. An reset-set （RS） trigger based, relaxation oscillator based temperature measurement circuit, which is used to convert the change of t...Resistance-to-time converter is always used for digital temperature measurement. An reset-set （RS） trigger based, relaxation oscillator based temperature measurement circuit, which is used to convert the change of thermistor sensor into a frequency signal for later processing, has been presented in this article. The RS trigger, which is composed of two inverters designed with distinct logical transition threshold voltages by changing the metal-oxide-semiconductor （MOS） transistor gains, has the same function as the Schmitt trigger in the relaxation oscillator. The advantage of the RS trigger based Schmitt trigger is that it reduces the dependence to supply voltage, chip temperature, and process variation. This temperature measurement circuit has been applied in a clinical thermometer chip that can measure temperature to an accuracy of better than 0.05 ℃ down to 1.1 V battery voltage. It is fabricated in 0.5 μm double metal single poly complementary MOS （CMOS） process.展开更多
Based on the Krylov-Bogolyubov method of averaging the closed system of equations for particle motion and temperature in inhomogeneous rapidly oscillating velocity and temperature of fluid phase is derived. It is show...Based on the Krylov-Bogolyubov method of averaging the closed system of equations for particle motion and temperature in inhomogeneous rapidly oscillating velocity and temperature of fluid phase is derived. It is shown that the particle movement in a rapidly oscillating fluid velocity field occurs not only under the force of gravity and resistance, but also under force of migration. The migration force is the result of particle inertia and in homogeneity of oscillation of velocity field of the carrier phase. Effects of dynamic and thermal relaxation times of particle and gravity force have been studied. It is shown possibilities of accumulation of particles under the combined action of gravity and migration forces. For a linear dependence of the amplitude of velocity and temperature fluctuations of the fluid an analytical solution was presented. The analytical solutions have been found in good agreement with the results of numerical solution of system of equations of motion and heat transfer of particle.展开更多
文摘The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy （MBE） ,AIAs/lnx Ga1-x As/GaAs double barrier resonant tunneling structures （DBRTS） are grown on （100） semi-insulated （SI） GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approxi- mately a - 17.9kHz/MPa change.
基金Project supported by the National Science Foundation of USA （Grant No ECS-0139956）.Acknowledgments The authors wish to thank Professor A. J. Lichtenberg for many useful discussions and suggestions. They acknowledge the support provided by the Lam Research Corporation, the State of California MI- CR0 Program, National Science Foundation （Grant No ECS-0139956）, and a University of California Discovery （Grant from the Industry-University Cooperative Research Program （IUCRP）. Professor Zhou Zhu-Wen performed this work as a visiting scholar in the Department of Electrical Engineering and Computer Sciences, University of California at Berkeley from May 2005 to May 2006.
文摘Relaxation oscillations due to plasma instabilities at frequencies ranging from a few Hz to tens of kHz have been observed in various types of plasma processing discharges. Relaxation oscillations have been observed in electropositive capacitive discharges between a powered anode and a metallic chamber whose periphery is grounded through a slot with dielectric spacers. The oscillations of time-varying optical emission from the main discharge chamber show, for example, a high-frequency （- 40 kHz） relaxation oscillation at 13.33Pa, with an absorbed power being nearly the peripheral breakdown power, and a low-frequency （- 3 Hz） oscillation, with an even higher absorbed power. The high-frequency oscillation is found to ignite plasma in the slot, but usually not in the peripheral chamber. The kilohertz oscillations are modelled using an electromagnetic model of the slot impedance, coupled to a circuit analysis of the system including the matching network. The model results are in general agreement with the experimental observations, and indicate a variety of behaviours dependent on the matching conditions. In low-pressure inductive discharges, oscillations appear in the transition between low-density capacitively driven and high-density inductively driven discharges when attaching gases such as SF6 and Ar/SF6 mixtures are used. Oscillations of charged particles, plasma potential, and light, at frequencies ranging from a few Hz to tens of kHz, are seen for gas pressures between 0.133 Pa and 13.33 Pa and discharge powers in a range of 75 1200 W. The region of instability increases as the plasma becomes more electronegative, and the frequency of plasma oscillation increases as the power, pressure, and gas flow rate increase. A volume-averaged （global） model of the kilohertz instability has been developed; the results obtained from the model agree well with the experimental observations.
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2013AA031502 and 2014AA041902the National Natural Science Foundation of China under Grant Nos 11174085,51132004,and 51302086+3 种基金the Guangdong Natural Science Foundation under Grant Nos S2011030001349 and S20120011380the China National Funds for Distinguished Young Scientists under Grant No 61325024the Science and Technology Project of Guangdong Province under Grant No 2013B090500028the’Cross and Cooperative’Science and Technology Innovation Team Project of Chinese Academy of Sciences under Grant No 2012-119
文摘Effective multiple optoelectronic feedback circuits for simultaneously suppressing low-frequency and relaxation oscillation intensity noise in a single-frequency phosphate fiber laser are demonstrated. The forward transfer function, which relates the laser output intensity to the pump modulations, is measured and analyzed. A custom two-path feedback system operating at different frequency bands is designed to adjust the pump current directly. The relative intensity noise is decreased by 20dB from 0.2 to 5kHz and over lOdB from 5 to lOkHz. The relaxation oscillation peak is suppressed by 22dB. In addition, a long term （24h） laser instability of less than 0.05% is achieved.
基金Project supported by the Science Foundation of the Educational Bureau of Guizhou Province in China (Grant No ECS-2006215)the Lam Research Corporation+2 种基金the State of California MICRO ProgramNational Science Foundation (Grant No ECS-0139956)a UC Discovery Grant from the Industry-University Cooperative Research Program (IUCRP)
文摘Both high and low frequency relaxation oscillations have been observed in an argon capacitive discharge connected to a peripheral grounded chamber through a slot with dielectric spacers. The oscillations, observed from time-varying optical emission of the main discharge chamber, show, for example, a high frequency （46 kHz） relaxation oscillation at 100 mTorr, with an absorbed power near the peripheral breakdown, and a low frequency （2.7-3.7 Hz） oscillation, at a higher absorbed power. The high frequency oscillation is found to ignite a plasma in the slot, but usually not in the periphery. The high frequency oscillation is interpreted by using an electromagnetic model of the slot impedance, combined with the circuit analysis of the system including a matching network. The model is further developed by using a parallel connection of variable peripheral capacitance to analyse the low frequency oscillation. The results obtained from the model are in agreement with the experimental observations and indicate that a variety of behaviours are dependent on the matching conditions.
基金Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and 2011CB932804+2 种基金the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,13ZR1447200 and 14ZR1447500
文摘The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
文摘During initial studies of ECRH in the HL-1M tokamak, non-standard central MHD activities,such as saturated sawtooth, partially saturated sawtooth, double sawtooth, and the strong m = 1 bursts have been observed while changing the heating location, the ECRH power, the plasma density. Complete suppression of sawtooth is achieved for the duration of the ECRH, when the heating power is applied on the high-field side of low-density plasma, and exceeds a threshold value of power. The m = 1 bursts riding on the ramp phase of sawtooth can only be excited when the ECRH location is near the q = 1 surface on the high field side. The conditions under which the various relaxation activities are produced or suppressed are described. Experimental results imply that the energetic electrons generated during ECRH are responsible for the modification/or stabilization/or excitation of the instability. Near the q = 1 surface, the passing electrons play the role of reducing the shear and tending to stabilize the sawtooth activity, while the barely-trapped electrons play the role of enhancing or driving an internal kink instability.
基金supported by the National Natural Science Foundation of China(Grant Nos.51971178 and 52271153)the Natural Science Basic Research Plan for Distinguished Young Scholars in Shaanxi Province(Grant No.2021JC-12)+4 种基金the Natural Science Foundation of Chongqing(Grant No.cstc2020jcyj-jq X0001)financial support from“Proyecto PID2020-112975GB-I00 de investigación financiado por MCIN/AEI/10.13039/501100011033”Generalitat de Catalunya AGAUR 2021-SGR-343 grantsupported by the National Natural Science Foundation of China(Grant No.12072344)the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
文摘Dynamic mechanical relaxation processes,particularly secondary relaxation processes,are closely related to the mechanical and physical properties of metallic glasses.Here the effect of oscillation strain amplitude on the secondary relaxation of a typical Labased metallic glass was studied using the dynamic mechanical analysis method.The apparent activation energy of theβrelaxation is shown to increase with the oscillation strain amplitude.When it changes from 0.02%to 0.16%,the activation energy increases from 0.73 to 0.96 eV.Simultaneously,the intensity of theβrelaxation shifts toward high temperature.Additionally,the apparentβrelaxation is found to be sensitive to the physical aging below the glass transition temperature.The findings suggest a correlation between the inelastic deformation and the relaxation behavior of amorphous metals.
基金Natural Science Foundation of Hubei Province of China (226ABA080)
文摘Resistance-to-time converter is always used for digital temperature measurement. An reset-set （RS） trigger based, relaxation oscillator based temperature measurement circuit, which is used to convert the change of thermistor sensor into a frequency signal for later processing, has been presented in this article. The RS trigger, which is composed of two inverters designed with distinct logical transition threshold voltages by changing the metal-oxide-semiconductor （MOS） transistor gains, has the same function as the Schmitt trigger in the relaxation oscillator. The advantage of the RS trigger based Schmitt trigger is that it reduces the dependence to supply voltage, chip temperature, and process variation. This temperature measurement circuit has been applied in a clinical thermometer chip that can measure temperature to an accuracy of better than 0.05 ℃ down to 1.1 V battery voltage. It is fabricated in 0.5 μm double metal single poly complementary MOS （CMOS） process.
文摘Based on the Krylov-Bogolyubov method of averaging the closed system of equations for particle motion and temperature in inhomogeneous rapidly oscillating velocity and temperature of fluid phase is derived. It is shown that the particle movement in a rapidly oscillating fluid velocity field occurs not only under the force of gravity and resistance, but also under force of migration. The migration force is the result of particle inertia and in homogeneity of oscillation of velocity field of the carrier phase. Effects of dynamic and thermal relaxation times of particle and gravity force have been studied. It is shown possibilities of accumulation of particles under the combined action of gravity and migration forces. For a linear dependence of the amplitude of velocity and temperature fluctuations of the fluid an analytical solution was presented. The analytical solutions have been found in good agreement with the results of numerical solution of system of equations of motion and heat transfer of particle.
