Textured Perovskite/Silicon Tandem Solar Cells Achieving Over 30% Efficiency Promoted by 4-Fluorobenzylamine Hydroiodide

Monolithic textured perovskite/silicon tandem solar cells(TSCs)are expected to achieve maximum light capture at the lowest cost,potentially exhibiting the best power conversion efficiency.However,it is challenging to fabricate high-quality perovskite films and preferred crystal orientation on commercially textured silicon substrates with micrometersize pyramids.Here,we introduced a bulky organic molecule(4-fluorobenzylamine hydroiodide(F-PMAI))as a perovskite additive.It is found that F-PMAI can retard the crystallization process of perovskite film through hydrogen bond interaction between F^(−)and FA^(+)and reduce(111)facet surface energy due to enhanced adsorption energy of F-PMAI on the(111)facet.Besides,the bulky molecular is extruded to the bottom and top of perovskite film after crystal growth,which can passivate interface defects through strong interaction between F-PMA+and undercoordinated Pb^(2+)/I^(−).As a result,the additive facilitates the formation of large perovskite grains and(111)preferred orientation with a reduced trap-state density,thereby promoting charge carrier transportation,and enhancing device performance and stability.The perovskite/silicon TSCs achieved a champion efficiency of 30.05%based on a silicon thin film tunneling junction.In addition,the devices exhibit excellent longterm thermal and light stability without encapsulation.This work provides an effective strategy for achieving efficient and stable TSCs.

Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

Modeling and Simulation of Heterojunction Solar Cell with Mono Crystalline Silicon

The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (Voc) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained VOC in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (VOC), the short circuit current (JSC), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).

Review of all-inorganic perovskites and their tandem solar cells with crystalline silicon

In widely studied organic-inorganic hybrid perovskites,the organic component tends to volatilize and decompose under high temperatures,oxygen,and humidity,which adversely affects the performance and longevity of the associated solar cells.In contrast,all-inorganic perovskites demonstrate superior stability under these conditions and offer photoelectric properties comparable to those of their hybrid counterparts.The potential of tandem solar cells(TSCs)made from all-inorganic perovskites is especially promising.This review is the first to address recent advancements in TSCs that use all-inorganic perovskites and crystalline silicon(c-Si),both domestically and internationally.This work provides a systematic and thorough analysis of the current challenges faced by these systems and proposes rational solutions.Additionally,we elucidate the regulatory mechanisms of all-inorganic perovskites and their TSCs when combined with c-Si,summarizing the corresponding patterns.Finally,we outline future research directions for all-inorganic perovskites and their TSCs with c-Si.This work offers valuable insights and references for the continued advancement of perovskitebased TSCs.

Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells

A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.

One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

Currently, a conventional two-step method has been used to generate black silicon （BS） surfaces on silicon substrates for solar cell manufacturing. However, the performances of the solar cell made with such surface generation method are poor, because of the high surface recombination caused by deep etching in the conventional surface generation method for BS. In this work, a modified wet chemical etching solution with additives was developed. A homogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature. The BS layer had low reflectivity and shallow etching depth. The additive in the etch solution performs the function of pH-modulation. After 16-min etching, the etching depth in the samples was approximately 200 nm, and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%. BS solar cells were fabricated in the production line. The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination. An efficiency of 15.63% for the modified etching BS solar cells was achieved on a large area, p- type single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88% fill factor.

Purification of solar cell silicon materials through filtration

Silicon is the material most commonly used in the manufacturing of photovoltaic (PV) cells. In the current study, laboratory experiments of purification of solar cell silicon materials through filtration are carried out. Inclusion removal from silicon was investigated. The purpose is to achieve clean silicon materials for solar cells. Silicon samples and filter samples were analyzed using microscope observation, EPMA, and X-ray detection. Silicon nitride (Si3N4) and silicon carbide (SiC) particles are the main non-metallic inclusions present in top-cut silicon scrap. Almost all inclusions larger than 10 μm can be removed from silicon by the porous foam filter. In mass fraction, more than 90% inclusions are removed. Si3N4 particles are mainly removed on the top surface of the filter, and SiC particles are mainly removed by entering the pores and attaching to the filter material. SiC inclusions are not only simply attached on the surface of the filter material, but are found also inside the filter material. There are SiC bridges near the filter materials. These bridges may fill the spaces between filter material, and this will further retard inclusions passing through the filter. Three-dimensional turbulent fluid flow and inclusion motion in the filter was calculated. Both experimental observation and fluid flow simulation indicate that most of the inclusions are entrapped at the upper part of the filter.

Influence of texture feature size on spherical silicon solar cells

The effects of surface texturing on spherical silicon solar cells were investigated. Surface texturing for spherical Si solar cells was prepared by immersing p-type spherical Si crystals in KOH solution with stirring. Two kinds of texture feature sizes (1 and 5 μm pyramids) were prepared by changing stirring speed. After fabrication through our baseline processes, these cells were evaluated by solar cell performance and external quantum efficiency. The cell with 1 and 5 μm pyramids shows the short circuit current density (Jsc) value of 31.9 and 33.2 mA·cm-2, which is 9% and 13% relative increase compared to the cell without texturing. Furthermore, the cell with 5 μm pyramids has a higher open-circuit voltage (0.589 V) than the cell with 1 μm pyramids (0.577 V). As a result, the conversion efficiency was improved from 11.4% for the cell without texturing to 12.1% for the cell with 5 μm pyramids.

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.

Maskless fabrication of quasi-omnidirectional V-groove solar cells using an alkaline solution-based method

Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.

Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation

A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters（carrier lifetime, diffusion coefficient, and surface recombination velocities） were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si：p base of the solar cell at the irradiation electron energy of 1 Me V was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current（I sc） degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.

Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost

A novel structure of Ag gridlSiN_(x)/n+-c-Si/n-c-Si/i-a-Si:H/p^(+)-a-Si:HlTCO/Ag grid was designed to increase the ef-ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost.The simulation results show that the new structure obtains higher efficiency compared with the typical bifa-cial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current(J_(sc)),while retaining the advantages of a high open-circuit voltage,low temperature coefficient,and good weak-light performance.Moreover,real cells composed of the novel structure with dimensions of 75 mm×75 mm were fabricated by a special fabrication recipe based on industrial processes.Without parameter optimization,the cell efficiency reached 21.1%with the J_(sc)of 41.7 mA/cm^(2).In addition,the novel structure attained 28.55%potential conversion efficiency under an illumination of AM 1.5 G,100 mW/cm^(2).We conclude that the configuration of the Ag grid/SiN_(x)/n^(+)-c-Si/n-c-Si/i-a-Si:H/p^(+)-a-Si:H/TCO/Ag grid is a promising structure for high efficiency and low cost.

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations

Interdigitated back contact（IBC） solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.

Enhanced Photovoltaic Properties for Rear Passivated Crystalline Silicon Solar Cells by Fabricating Boron Doped Local Back Surface Field

In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field（B-LBSF） was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.