In this paper, we consider multi-agent consensus problems in a decentralised fashion. The interconnection topology graph among the agents is switching and undirected. The agent dynamics is expressed in the form of a d...In this paper, we consider multi-agent consensus problems in a decentralised fashion. The interconnection topology graph among the agents is switching and undirected. The agent dynamics is expressed in the form of a double integrator model. Two different cases are considered in this study. One is the leader-following case and the other is leaderless case. Based on graph theory and common Lyapunov function method, some sufficient conditions are obtained for the consensus stability of the considered systems with the neighbour-based feedback laws in both leader-following case and leaderless case respectively. Finally, two numerical examples are given to illustrate the obtained results.展开更多
Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be rev...Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.展开更多
In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion appr...In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 60674071)
文摘In this paper, we consider multi-agent consensus problems in a decentralised fashion. The interconnection topology graph among the agents is switching and undirected. The agent dynamics is expressed in the form of a double integrator model. Two different cases are considered in this study. One is the leader-following case and the other is leaderless case. Based on graph theory and common Lyapunov function method, some sufficient conditions are obtained for the consensus stability of the considered systems with the neighbour-based feedback laws in both leader-following case and leaderless case respectively. Finally, two numerical examples are given to illustrate the obtained results.
文摘Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.
文摘In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.
