The multi-layer ceramic capacitor (MLCC) alignment system aims at the inter-process automation between the first and the second plastic processes.As a result of testing performance verification of MLCC alignment syste...The multi-layer ceramic capacitor (MLCC) alignment system aims at the inter-process automation between the first and the second plastic processes.As a result of testing performance verification of MLCC alignment system,the average alignment rates are 95% for 3216 chip,88.5% for 2012 chip and 90.8% for 3818 chip.The MLCC alignment system can be accepted for practical use because the average manual alignment is just 80%.In other words,the developed MLCC alignment system has been upgraded to a great extent,compared with manual alignment.Based on the successfully developed MLCC alignment system,the optimal transfer conditions have been explored by using RSM.The simulations using ADAMS has been performed according to the cube model of CCD.By using MiniTAB,the model of response surface has been established based on the simulation results.The optimal conditions resulted from the response optimization tool of MiniTAB has been verified by being assigned to the prototype of MLCC alignment system.展开更多
The influence of the composition (Yb2O3, MgO, CeO2, Li2CO3) on the dielectric properties of medium temperature sintering (Ba, Sr)TiO3 (BST) series capacitor ceramics was investigated by means of conventional tec...The influence of the composition (Yb2O3, MgO, CeO2, Li2CO3) on the dielectric properties of medium temperature sintering (Ba, Sr)TiO3 (BST) series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor's levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant (ε) and for minimum dielectric loss (tanδ) was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate (△C/C) - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.展开更多
The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm ...The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .展开更多
The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state me...The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.展开更多
SrTiO 3 capacitor varistor multifunction ceramics is fabricated by a single sintering process. The research is carried out, mainly aimed at the influence of the doped Ag + on multifunction characteristics in SrTiO 3 c...SrTiO 3 capacitor varistor multifunction ceramics is fabricated by a single sintering process. The research is carried out, mainly aimed at the influence of the doped Ag + on multifunction characteristics in SrTiO 3 ceramics and its mechanism. The results show that the density of grain boundary acceptor state increases effectively due to the fact that Sr 2+ on grain surface is substituted by doped Ag distributing at grain boundary in form of Ag + during the course of oxidizing annealing, which is proposed to be the fundamental reason for understanding the significant difference of both the dielectric properties and varistor properties in SrTiO 3 ceramics samples with various Ag + contents.展开更多
The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the d...The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the dielectric constant(ε) of materials increased, the dielectric loss(tanδ) of materials decreased to minimum when w(Yb2O3) was 0.9%. The BST ceramics with high ε(10000), low tanδ(0.0213) and high DC breakdown voltage(7.2 kV·mm-1) were obtained. The influence of Yb2O3 doping amount on the structure of BST ceramics was studied by means of X-ray diffraction(XRD) and scanning electron microscope. The influencing mechanism of Yb2O3 on the dielectric properties of BST ceramics was studied. The results showed that Yb2O3 doping influenced the properties and structure of BST ceramics by means of forming defect solid solution, but did not influence crystal grain size,the crystal phase was single perovskite structure, did not influence XRD data of BST and did not improve capacitance temperature property greatly, but increase dielectric constant greatly. These results provided the basis for Yb2O3-doped BST series capacitor ceramics.展开更多
To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na20-PbO-Nb2O5-SiO2 multilayer glass-ceramic capacitors, Au films pre-deposi...To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na20-PbO-Nb2O5-SiO2 multilayer glass-ceramic capacitors, Au films pre-deposited at different time were prepared by DC magnetron sputtering. Compared with the single paste electrode structure, samples with Au films pre-deposited from 6 to 18 min have the consistent perfor- mance to effectively improve the electrical properties of the capacitors, resulting in the doubled breakdown strength, an increase of equivalent capacitance by 22% and a decrease of leakage current by an order of magnitude. SEM observations indicate that the Au films with deposition time from 6 to 18 min would all help the formation of a dense electrode/dielectric interface and inhibit the diffusion of Ag. The results reveal that Au film pre-deposited for 6 min as inner electrode was sufficient to improve the interface microstructure and therefore to inhibit the Ag diffusion and enhance the overall performance of the multi-layer glass-ceramic capacitors.展开更多
为提升钛酸铋钠(NBT)基无铅陶瓷电容材料的储能性能,以A位掺杂方式向0.65[Na_(0.5)Bi_(0.5)TiO_(3)]-0.35Sr_(0.7)Bi_(0.2)TiO_(3)中引入MgO,并采用固相烧结法制备了不同摩尔含量(x=0.01~0.06)的0.65[(Na1-x,Mgx)0.5Bi_(0.5)TiO_(3)]-0....为提升钛酸铋钠(NBT)基无铅陶瓷电容材料的储能性能,以A位掺杂方式向0.65[Na_(0.5)Bi_(0.5)TiO_(3)]-0.35Sr_(0.7)Bi_(0.2)TiO_(3)中引入MgO,并采用固相烧结法制备了不同摩尔含量(x=0.01~0.06)的0.65[(Na1-x,Mgx)0.5Bi_(0.5)TiO_(3)]-0.35Sr_(0.7)Bi_(0.2)TiO_(3)(NBT-SBT)陶瓷样品。通过SEM观察和XRD表征,发现随着Mg^(2+)含量的增加,NBT-SBT陶瓷的晶粒尺寸呈先减小后增大的变化,在Mg^(2+)掺入量(x)为0.025时,陶瓷晶粒尺寸最小。介电温谱和电滞回线测试表明该陶瓷为典型的铁电弛豫体,具有较高的介电常数(εr)和电极化强度(Pmax)。在100 k V/cm电场下,(Na0.94,Mg0.06)BT-SBT的可释放能量密度Wrec高达1.65 J/cm^(3),储能效率η为75%,综合性能优于同类NBT基陶瓷样品。结果表明,MgO掺杂的(Na1-x,Mgx)BT-SBT陶瓷具有优异的储能密度和效率,可为电子电力设备等领域的高功率储能电容器件的研究提供参考。展开更多
With the increasing demand of high-power and pulsed power electronic devices,environmental-friendly potassium sodium niobate((Na_(0.5)K_(0.5))NbO_(3),KNN)ceramic-based capacitors have attracted much attention in recen...With the increasing demand of high-power and pulsed power electronic devices,environmental-friendly potassium sodium niobate((Na_(0.5)K_(0.5))NbO_(3),KNN)ceramic-based capacitors have attracted much attention in recent years owning to the boosted energy storage density(W_(rec)).Nevertheless,the dielectric loss also increases as the external electric field increases,which will generate much dissipated energy and raise the temperature of ceramic capacitors.Thus,an effective strategy is proposed to enhance the energy storage efficiency(η)via tailoring relaxor behavior and bad gap energy in the ferroelectric 0.9(Na_(0.5)K_(0.5))-NbO_(3)-0.1Bi(Zn_(2/3)(Nb_(x)Ta_(1−x))1/3)O_(3) ceramics.On the one hand,the more diverse ions in the B-sites owing to introducing the Ta could further disturb the long-range ferroelectric polar order to form the short−range polar nanoregions(PNRs),resulting in the highη.On the other hand,the introduction of Ta ions could boost the intrinsic band energy gap and thus improve the Eb.As a result,high Wrec of 3.29 J/cm^(3) and ultrahighηof 90.1%at the high external electric field of 310 kV/cm are achieved in x=0.5 sample.These results reveal that the KNN-based ceramics are promising lead-free candidate for high-power electronic devices.展开更多
基金supported by the Second Stage of Brain Korea 21 Projectssupported (in part) by the Solomon Mechanics Inc
文摘The multi-layer ceramic capacitor (MLCC) alignment system aims at the inter-process automation between the first and the second plastic processes.As a result of testing performance verification of MLCC alignment system,the average alignment rates are 95% for 3216 chip,88.5% for 2012 chip and 90.8% for 3818 chip.The MLCC alignment system can be accepted for practical use because the average manual alignment is just 80%.In other words,the developed MLCC alignment system has been upgraded to a great extent,compared with manual alignment.Based on the successfully developed MLCC alignment system,the optimal transfer conditions have been explored by using RSM.The simulations using ADAMS has been performed according to the cube model of CCD.By using MiniTAB,the model of response surface has been established based on the simulation results.The optimal conditions resulted from the response optimization tool of MiniTAB has been verified by being assigned to the prototype of MLCC alignment system.
文摘The influence of the composition (Yb2O3, MgO, CeO2, Li2CO3) on the dielectric properties of medium temperature sintering (Ba, Sr)TiO3 (BST) series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor's levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant (ε) and for minimum dielectric loss (tanδ) was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate (△C/C) - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.
文摘The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .
基金supported by the Found No.NSC96-2218-E-020-004-005
文摘The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.
文摘SrTiO 3 capacitor varistor multifunction ceramics is fabricated by a single sintering process. The research is carried out, mainly aimed at the influence of the doped Ag + on multifunction characteristics in SrTiO 3 ceramics and its mechanism. The results show that the density of grain boundary acceptor state increases effectively due to the fact that Sr 2+ on grain surface is substituted by doped Ag distributing at grain boundary in form of Ag + during the course of oxidizing annealing, which is proposed to be the fundamental reason for understanding the significant difference of both the dielectric properties and varistor properties in SrTiO 3 ceramics samples with various Ag + contents.
文摘The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the dielectric constant(ε) of materials increased, the dielectric loss(tanδ) of materials decreased to minimum when w(Yb2O3) was 0.9%. The BST ceramics with high ε(10000), low tanδ(0.0213) and high DC breakdown voltage(7.2 kV·mm-1) were obtained. The influence of Yb2O3 doping amount on the structure of BST ceramics was studied by means of X-ray diffraction(XRD) and scanning electron microscope. The influencing mechanism of Yb2O3 on the dielectric properties of BST ceramics was studied. The results showed that Yb2O3 doping influenced the properties and structure of BST ceramics by means of forming defect solid solution, but did not influence crystal grain size,the crystal phase was single perovskite structure, did not influence XRD data of BST and did not improve capacitance temperature property greatly, but increase dielectric constant greatly. These results provided the basis for Yb2O3-doped BST series capacitor ceramics.
基金financially supported by the National High Technical Research and Development Programme of China (No.2008AA03A236)
文摘To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na20-PbO-Nb2O5-SiO2 multilayer glass-ceramic capacitors, Au films pre-deposited at different time were prepared by DC magnetron sputtering. Compared with the single paste electrode structure, samples with Au films pre-deposited from 6 to 18 min have the consistent perfor- mance to effectively improve the electrical properties of the capacitors, resulting in the doubled breakdown strength, an increase of equivalent capacitance by 22% and a decrease of leakage current by an order of magnitude. SEM observations indicate that the Au films with deposition time from 6 to 18 min would all help the formation of a dense electrode/dielectric interface and inhibit the diffusion of Ag. The results reveal that Au film pre-deposited for 6 min as inner electrode was sufficient to improve the interface microstructure and therefore to inhibit the Ag diffusion and enhance the overall performance of the multi-layer glass-ceramic capacitors.
文摘为提升钛酸铋钠(NBT)基无铅陶瓷电容材料的储能性能,以A位掺杂方式向0.65[Na_(0.5)Bi_(0.5)TiO_(3)]-0.35Sr_(0.7)Bi_(0.2)TiO_(3)中引入MgO,并采用固相烧结法制备了不同摩尔含量(x=0.01~0.06)的0.65[(Na1-x,Mgx)0.5Bi_(0.5)TiO_(3)]-0.35Sr_(0.7)Bi_(0.2)TiO_(3)(NBT-SBT)陶瓷样品。通过SEM观察和XRD表征,发现随着Mg^(2+)含量的增加,NBT-SBT陶瓷的晶粒尺寸呈先减小后增大的变化,在Mg^(2+)掺入量(x)为0.025时,陶瓷晶粒尺寸最小。介电温谱和电滞回线测试表明该陶瓷为典型的铁电弛豫体,具有较高的介电常数(εr)和电极化强度(Pmax)。在100 k V/cm电场下,(Na0.94,Mg0.06)BT-SBT的可释放能量密度Wrec高达1.65 J/cm^(3),储能效率η为75%,综合性能优于同类NBT基陶瓷样品。结果表明,MgO掺杂的(Na1-x,Mgx)BT-SBT陶瓷具有优异的储能密度和效率,可为电子电力设备等领域的高功率储能电容器件的研究提供参考。
基金supported by the National Natural Science Foundation of China(Grant No.52072150)the Young Elite Scientists Sponsorship Program of the Chinese Academy of Space Technology(CAST)and Open Foundation of Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices(EFMD2021002Z).
文摘With the increasing demand of high-power and pulsed power electronic devices,environmental-friendly potassium sodium niobate((Na_(0.5)K_(0.5))NbO_(3),KNN)ceramic-based capacitors have attracted much attention in recent years owning to the boosted energy storage density(W_(rec)).Nevertheless,the dielectric loss also increases as the external electric field increases,which will generate much dissipated energy and raise the temperature of ceramic capacitors.Thus,an effective strategy is proposed to enhance the energy storage efficiency(η)via tailoring relaxor behavior and bad gap energy in the ferroelectric 0.9(Na_(0.5)K_(0.5))-NbO_(3)-0.1Bi(Zn_(2/3)(Nb_(x)Ta_(1−x))1/3)O_(3) ceramics.On the one hand,the more diverse ions in the B-sites owing to introducing the Ta could further disturb the long-range ferroelectric polar order to form the short−range polar nanoregions(PNRs),resulting in the highη.On the other hand,the introduction of Ta ions could boost the intrinsic band energy gap and thus improve the Eb.As a result,high Wrec of 3.29 J/cm^(3) and ultrahighηof 90.1%at the high external electric field of 310 kV/cm are achieved in x=0.5 sample.These results reveal that the KNN-based ceramics are promising lead-free candidate for high-power electronic devices.