Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification

This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.

Effect of phosphorus content on interfacial heat transfer and film deposition behavior during the high-temperature simulation of strip casting

The interfacial wettability and heat transfer behavior are crucial in the strip casting of high phosphorus-containing steel.A hightemperature simulation of strip casting was conducted using the droplet solidification technique with the aims to reveal the effects of phosphorus content on interfacial wettability,deposited film,and interfacial heat transfer behavior.Results showed that when the phosphorus content increased from 0.014wt%to 0.406wt%,the mushy zone enlarged,the complete solidification temperature delayed from1518.3 to 1459.4℃,the final contact angle decreased from 118.4°to 102.8°,indicating improved interfacial contact,and the maximum heat flux increased from 6.9 to 9.2 MW/m2.Increasing the phosphorus content from 0.081wt%to 0.406wt%also accelerated the film deposition rate from 1.57 to 1.73μm per test,resulting in a thickened naturally deposited film with increased thermal resistance that advanced the transition point of heat transfer from the fifth experiment to the third experiment.

Electrodeposition of multi-layer Pd-Ni coatings on 316L stainless steel and their corrosion resistance in hot sulfuric acid solution

Pd-Ni coating shows good corrosion resistance in strong corrosion environments.However,in complex aggressiveenvironments,the performance of the coatings is limited and further improvement is necessary.The effects of the applied platingcurrent density on the composition,structure and properties of Pd-Ni coatings were studied.By changing the current density in thesame bath,multi-layer Pd-Ni coatings were prepared on316L stainless steel.Scanning electronic microscopy,weight loss tests,adhesion strength,porosity and electrochemical methods were used to study the corrosion resistance of the films prepared bydifferent coating methods.Compared with the single layer Pd-Ni coating,the multi-layer coatings showed higher microhardness,lower internal stress,lower porosity and higher adhesive strength.The multi-layer Pd-Ni coating showed obviously better corrosionresistance in hot sulfuric acid solution containing Cl-.

Thixoforming of 6066 aluminum alloy by multi-layer spray deposition

Two thixoforming technologies of 6066 aluminum alloy (Al 1.37Si 1.37Mg 0.77Cu 0.07Mn ) produced by multi layer spray deposition process were studied. The spray formed materials are of equiaxed and very fine grain (10～20 μm). And the grain size coarsens slower than that of conventional casting materials at temperature below the liquidus, which may relate to high temperature particles distributed along the grain boundaries. Extrusion and hot pressing were used as the thixoforming processes respectively. After extrusion the materials show a microstructure of mean grain size below 20 μm without obvious recrystallization. The mechanical properties achieved via extrusion and pressing in semi solid state attain that of common wrought materials with shorter peak aging time of 4～5 h, about half of that in conventional condition. [

Preparation of large size aluminium alloy cylindrical preforms by multi-layer spray deposition

Preparation of large scale aluminium alloy cylindrical preforms have been studied by the methods of vertical spray deposition and tilted spray deposition respectively. The results show that aluminium alloy cylindrical preforms of a size up to d 320 mm×500 mm can take shape well by applying multi layer tilted spray deposition technology if the process is controlled properly. The spray system scans in a radius ranging from the center to the rim of the preform, and the velocity is inversely proportional to the displacement. The multi layer deposited preforms exhibit high cooling rate. The larger the diameter is and the higher the cooling rate and yield are.

Lattice Boltzmann simulation of phase change and heat transfer characteristics in the multi-layer deposition

The metal droplets deposition method(MDDM)is a rapid prototyping technology,implemented via metallurgy bonding within droplets.The anisotropy of heat transfer and re-melting is caused by an asymmetric deposition process.A lattice Boltzmann method(LBM)model is established to predict the heat transfer and phase change in the multi-layer deposition.The prediction model is verified by the experimental temperature profiles in existing literature.The monitoring points are set to compare the temperature profiles,and decoupling analyze the heat transfer mechanism in different positions.The negative relationships between the re-molten volume of the temperature difference,as well as the influence of the dispositive position and the relative position of the adjacent component are observed and analyzed under the heat conduction.This work is helpful to choose the appropriate temperature conditions and the optimal dispositive method.

A NOVEL MULTI-LAYER SPRAY DEPOSITION TECHNOLOGY

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Flexible free-standing graphene-like film electrode for supercapacitors by electrophoretic deposition and electrochemical reduction

Electrophoretic deposition in conjunction with electrochemical reduction was used to make flexible free-standing graphene-like films. Firstly, graphene oxide （GO） film was deposited on graphite substrate by electrophoretic deposition method, and then reduced by subsequent electrochemical reduction of GO to obtain reduced GO （ERGO） film with high electrochemical performance. The morphology, structure and electrochemical performance of the prepared graphene-like film were confirmed by SEM, XRD and FT-IR. These unique materials were found to provide high specific capacitance and good cycling stability. The high specific capacitance of 254 F/g was obtained from cyclic voltammetry measurement at a scan rate of 10 mV/s. When the current density increased to 83.3 A/g, the specific capacitance values still remained 132 F/g. Meanwhile, the high powder density of 39.1 kW/kg was measured at energy density of 11.8 W-h/kg in 1 mol/L H2SO4 solution. Furthermore, at a constant scan rate of 50 mV/s, 97.02% of its capacitance was retained for 1000 cycles. These promising results were attributed to the unique assembly structure of graphene film and low contact resistance, which indicated their potential application to electrochemical capacitors.

Effect of deposition parameters on micro-and nano-crystalline diamond films growth on WC-Co substrates by HFCVD

The characteristics of hot filament chemical vapor deposition（HFCVD） diamond films are significantly influenced by the deposition parameters, such as the substrate temperature, total pressure and carbon concentration. Orthogonal experiments were introduced to study the comprehensive effects of such three parameters on diamond films deposited on WC-Co substrates. Field emission scanning electron microscopy, atomic force microscopy and Raman spectrum were employed to analyze the morphology, growth rate and composition of as-deposited diamond films. The morphology varies from pyramidal to cluster features with temperature decreasing. It is found that the low total pressure is suitable for nano-crystalline diamond films growth. Moreover, the substrate temperature and total pressure have combined influence on the growth rate of the diamond films.

Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates

Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.

Structure characteristic and its evolution of Cu-W films prepared by dual-target magnetron sputtering deposition

Immiscible Cu-W alloy thin films were prepared using dual-target magnetron sputtering deposition process. The structure evolution of Cu-W thin films during preparation was investigated by X-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. In the initial stage of dual-target magnetron sputtering deposition process, an amorphous phase formed; then it crystallized and the analogy spinodal structure formed due to the bombardment of the sputtered particles during sputtering deposition process, the surface structure of the film without the bombardment of the sputtered particles was the amorphous one, the distribution of the crystalline and amorphous phase showed layer structure. The solid solubility with the analogy spinodal structure was calculated using the Vegard law. For Cu-13.7%W （mole fraction） film, its structure was composed of Cu-ll%W solution, Cu-37%W solution and pure Cu; for Cu 14.3%W film, it was composed of Cu-15%W solution, Cu-38%W solution, and pure Cu; for Cu-18.1%W film, it was composed of Cu-19%W solution, Cu-36% W solution and pure Cu.

Preparation of YBa_2Cu_3O_(7-δ) superconducting thick film on Ni-W tapes via electrophoretic deposition

The preparation of La0.4Sr0.6TiO3 （LSTO） buffer layer and YBa2Cu3O7-δ（YBCO） superconducting thick film by a low cost technology was studied. The crystal orientation of LSTO and YBCO films was detected by X-ray diffraction, the conductivity of LSTO film and superconductivity of YBCO coating were investigated by standard four-probe method. Excellent in-plane alignment, smooth and dense LSTO buffer layer was successfully prepared on textured Ni-W taps by metal organic deposition （MOD）. YBCO thick film was fabricated by electrophoretic deposition （EPD）. The effects of applied voltage and deposition time on the YBCO coatings properties were studied. The results show that the critical current density of the YBCO coating deposited under 138 V for 35 min was about 600 A/cm2 （0 T, 77 K）.

Preparation of TiO_2/ITO film by liquid phase deposition and its photoelectrocatalytic activity for degradation of 4-aminoantipyrine

A thin layer of TiO2 film was deposited on ITO surface via the liquid phase deposition （LPD） process. The photocurrent and electrochemical impedance spectroscopy （EIS） measurements indicated that the as-prepared LPD TiO2/ITO film had an excellent photoelectrochemical performance, which showed a sensitive and rapid response to the UV irradiation. The photogenerated electron-hole pairs could be effectively separated by applying an external bias to the TiO2 film electrode. The LPD TiO2/ITO film was employed to study the photoelectrocatalytic （PEC） degradation of 4-aminoantipyrine. Compared with other techniques, the PEC technique based on such a LPD film electrode had a synergetic effect for 4-aminoantipyrine degradation. When the applied bias potential was＋0.8 V and the supporting electrolyte concentration of Na2SO4 was 0.1 mol/L, the highest degradation efficiency within 120 min could reach 95%for 0.1 mmol/L 4-aminoantipyrine solution at pH 2.0.

STUDY ON DIAMOND LIKE CARBON THIN FILM BY FILTERED VACUUM ARC DEPOSITION

Diamond like carbon thin film is successfully deposited on silicon, titanium and stainless steel substrate at low temperature in a filtered vacuum arc deposition system. Arc discharges are established on a graphite cathode in the system with a toroidal macroparticle filter. A cathode activating magnetic field and a filtered magnetic field to collimate the plasma beam are applied. Ion current convected by the plasma beam is measured with a negatively biased probe. It is shown that the magnetic field of the coils located on the plasma duct has a strong influence on cathode spot behavior. Orthogonally the designed experiments are carried out to optimize the deposition parameters of arc stability. Finally, the diamond like carbon thin films are studied by scanning electron microscope (SEM) and Raman spectrum.

Amorphous SiO_2 interlayers for deposition of adherent diamond films onto WC-Co inserts

Amorphous Si O2（a-Si O2） films were synthesized on WC-Co substrates with H2 and tetraethoxysilane（TEOS） via pyrolysis of molecular precursor.X-ray diffraction（XRD） pattern shows that silicon-cobalt compounds form at the interface between a-Si O2 films and WC-Co substrates.Moreover,it is observed by transmission electron microscope（TEM） that the a-Si O2 films are composed of hollow mirco-spheroid a-Si O2 particles.Subsequently,the a-Si O2 films are used as intermediate films and chemical vapor deposition（CVD） diamond films are deposited on them.Indentation tests were performed to evaluate the adhesion of bi-layer（a-Si O2 ＋ diamond） films on cemented carbide substrates.And the cutting performance of bi-layer（a-Si O2 ＋ diamond） coated inserts was evaluated by machining the glass fiber reinforced plastic（GFRP）.The results show that a-Si O2 interlayers can greatly improve the adhesive strength of diamond films on cemented carbide inserts;furthermore,thickness of the a-Si O2 interlayers plays a significant role in their effectiveness on adhesion enhancement of diamond films.

Si-doped diamond films prepared by chemical vapour deposition

The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane （TEOS） into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy （SEM）. The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry （XRD）. The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of （11 I） facets. Raman spectra indicate that Si doping can enhance the formation of sp2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond （SFGD） film was synthesized at Si to C ratio of 1%.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Effect of ion-beam assisted deposition on the film stresses of TiO_2 and SiO_2 and stress control

Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.

Effect of deposition temperature on properties of boron-doped diamond films on tungsten carbide substrate

Boron-doped diamond(BDD)films were deposited on the tungsten carbide substrates at different substrate temperatures ranging from 450 to 850°C by hot filament chemical vapor deposition(HFCVD)method.The effect of deposition temperature on the properties of the boron-doped diamond films on tungsten carbide substrate was investigated.It is found that boron doping obviously enhances the growth rate of diamond films.A relatively high growth rate of 544 nm/h was obtained for the BDD film deposited on the tungsten carbide at 650°C.The added boron-containing precursor gas apparently reduced activation energy of film growth to be 53.1 kJ/mol,thus accelerated the rate of deposition chemical reaction.Moreover,Raman and XRD analysis showed that heavy boron doping(750 and 850°C)deteriorated the diamond crystallinity and produced a high defect density in the BDD films.Overall,600-700°C is found to be an optimum substrate temperature range for depositing BDD films on tungsten carbide substrate.

Activator-assisted electroless deposition of copper nanostructured films

This paper showed simple and effective synthesis of copper nanoparticles within controlled diameter using direct electroless deposition on glass substrates, following the sensitization and activation steps. Electroless-deposited metals, such as Cu, Co, Ni, and Ag, and their alloys had many advantages in micro- and nanotechnologies. The structural, morphological, and optical properties of copper deposits were characterized using X-ray diffraction （XRD）, atomic force microscopy （AFM）, and UV-Vis spectroscopy. The structural data was further analyzed using the Rietveld refinement program. Structural studies reveal that the deposited copper prefers a （111） orientation. AFM studies suggest the deposited materials form compact, uniform, and nanocrystalline phases with a high tendency to self-organize. The data show that the particle size can be controlled by controlling the activator concentration. The absorption spectra of the as-deposited copper nanoparticles reveal that the plasmonic peak broadens and exhibits a blue shift with decreasing particle size.