Tungsten oxide thin films were deposited on glass substrates by the magnetron sputtering of WO3 bulk at room temperature. The deposited films were annealed at different temperatures in air. The structural measurements...Tungsten oxide thin films were deposited on glass substrates by the magnetron sputtering of WO3 bulk at room temperature. The deposited films were annealed at different temperatures in air. The structural measurements indicate that the films annealed below 300℃ were amorphous, while the films annealed at 400 ℃ were mixed crystalline with hexagonal and triclinic phases of WO3. It was observed that the crystallization of the annealed films becomes more and more distinct with an increase in the annealing temperature. At 400 ℃, nanorod-like structures were observed on the film surface when the annealing time was increased from 60 min to 180 min. The presence of W=O stretching, W-O-W stretching, W-O-W bending and various lattice vibration modes were observed in Raman measurements. The optical absorption behaviors of the films in the range of 450-800 nm are very different with changing annealing temperatures from the room temperature to 400 ℃. After annealing at 400 ℃, the film becomes almost transparent. Increasing annealing time at 400 ℃ can lead to a small blue shift of the optical gap of the film.展开更多
Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and ...Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.展开更多
By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon ...By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.展开更多
The Indium tin oxide（ITO） thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant ...The Indium tin oxide（ITO） thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant monoethanolamine and the non-ionic surfactant polyethylene glycol（PEG） were added to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine contributed to film predominant grain orientation along the（400） plane.The high transmittance（over 95%） was attributed to the preferred orientation and the grain size expansion of ITO films.SEM showed that the surface particle size and the morphology of ITO films were strongly dependent on the kind of surfactants used.Moving to the shortwave region, the absorption edge of the films exhibited the Burstein-Moss shift.展开更多
BaTiO3 ferroelectric films were prepared on titanium substrate by microarc oxidation(MAO) technology. The effects of current density and electrolytic concentration on chemical composition, crystal phase, and surface m...BaTiO3 ferroelectric films were prepared on titanium substrate by microarc oxidation(MAO) technology. The effects of current density and electrolytic concentration on chemical composition, crystal phase, and surface morphologies of the films were characterized by XRD, SEM and EDS. The results show that the films made by MAO technology have a two layer structure with a good combinability between them and with the substrate. The inner layer is composed of Ti oxide without Ba, and the outer layer is mainly composed of BaTiO3 and Ti oxide. The compactability of the films decreases and the surface roughness of the films increases with the increase of current density and electrolytic concentration. Films with a high content of primitive tetragonal and end-centered orthorhombic BaTiO3 are obtained in 0.2 mol/LBa(OH)2 solution with current density of 5A/cm2 after 18 min.展开更多
Chemically polished NiTi shape memory alloy（SMA） substrate was treated with a boiling aqueous solution containing hydrogen peroxide to form titania film in situ at low temperature. The surface characterizations of t...Chemically polished NiTi shape memory alloy（SMA） substrate was treated with a boiling aqueous solution containing hydrogen peroxide to form titania film in situ at low temperature. The surface characterizations of titania film on NiTi substrate were investigated by scanning electron microscopy, X-ray diffractometry and X-ray photoelectron spectroscopy. The results show that titania film is successfully fabricated in situ on NiTi SMA by this surface oxidation method. It is mainly composed of rutile and anatase, whose surface compositions and morphologies are sensitive to H2O2 content. In situ formation mechanism of titania film on NiTi substrate was discussed based on the experimental results.展开更多
The evolution of the surface oxide film along the depth direction of typical aluminum alloy under mediumtemperature brazing was investigated by means of X-ray photoelectron spectroscopy(XPS). For the alloy with Mg con...The evolution of the surface oxide film along the depth direction of typical aluminum alloy under mediumtemperature brazing was investigated by means of X-ray photoelectron spectroscopy(XPS). For the alloy with Mg content below 2.0wt%, whether under cold rolling condition or during medium-temperature brazing process, the enrichment of Mg element on the surface was not detected and the oxide film was pure Al2O3. However, the oxide film grew obviously during medium-temperature brazing process, and the thickness was about 80 nm. For the alloy with Mg content above 2.0wt%, under cold rolling condition, the original surface oxide film was pure Al2O3. However, the Mg element was significantly enriched on the outermost surface during medium-temperature brazing process, and MgO-based oxide film mixed with small amount of MgAl2O4 was formed with a thickness of about 130 nm. The alloying elements of Mn and Si were not enriched on the surface neither under cold rolling condition nor during mediumtemperature brazing process for all the selected aluminum alloy, and the surface oxide film was similar to that of pure aluminum, which was almost entire Al2O3.展开更多
Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content o...Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.展开更多
Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of ace...Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.展开更多
Zinc oxide （ZnO） thin films were deposited on sapphire （0001） substrates at room temperature by radiofrequency （RF） magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influenc...Zinc oxide （ZnO） thin films were deposited on sapphire （0001） substrates at room temperature by radiofrequency （RF） magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance （〉90%） in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.展开更多
An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be...An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.展开更多
The vacuum-free vibration liquid phase(VLP) diffusion-bonding of SiC_p/ZL101A composites was investigated. The effects of vibration on the interface structure, the phase transformation and the tensile strength of bond...The vacuum-free vibration liquid phase(VLP) diffusion-bonding of SiC_p/ZL101A composites was investigated. The effects of vibration on the interface structure, the phase transformation and the tensile strength of bonded joints were examined. Experimental results show that the oxide film on the surface of the composites is a key factor affecting the tensile strength of boned joints. The distribution of the oxide layers at the interface changes from a continuous line to a discontinuous one during vibration. The tensile strength of the VLP diffusion-bonded joints increases with the vibration time, and is up to the maximum of 172MPa when the vibration time is 30s. The phase structure of the bond region changes from the Zn-Al-Cu hyper-eutectic (η+(β+η)+(β+η+ε)) phases to Al-rich Al-base solid solution (α-Al) with increasing the vibration time.展开更多
The Al-Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al-Ti composite oxide films formed at diffe...The Al-Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al-Ti composite oxide films formed at different anodizing temperatures from 25℃ to 85℃ have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al-Ti composite oxide film converts into three layers, I-V characteristics change evidently, and the specific capacitance achieves a peak value at about 75℃. The local breakdown in the composite oxide films formed at 50℃ occurs obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.展开更多
Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive pr...Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.展开更多
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.11104365 and 11104366)the Hubei Key Laboratory of Low Dimensional Optoelectronic Material and Devices,China(Grant No.13XKL02002)
文摘Tungsten oxide thin films were deposited on glass substrates by the magnetron sputtering of WO3 bulk at room temperature. The deposited films were annealed at different temperatures in air. The structural measurements indicate that the films annealed below 300℃ were amorphous, while the films annealed at 400 ℃ were mixed crystalline with hexagonal and triclinic phases of WO3. It was observed that the crystallization of the annealed films becomes more and more distinct with an increase in the annealing temperature. At 400 ℃, nanorod-like structures were observed on the film surface when the annealing time was increased from 60 min to 180 min. The presence of W=O stretching, W-O-W stretching, W-O-W bending and various lattice vibration modes were observed in Raman measurements. The optical absorption behaviors of the films in the range of 450-800 nm are very different with changing annealing temperatures from the room temperature to 400 ℃. After annealing at 400 ℃, the film becomes almost transparent. Increasing annealing time at 400 ℃ can lead to a small blue shift of the optical gap of the film.
基金Supported by the RU Top-Down under Grant No 1001/CSS/870019
文摘Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.
文摘By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.
基金supported by the National High-Tech Research and Development Program of China (No. 2004AA303542)
文摘The Indium tin oxide（ITO） thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant monoethanolamine and the non-ionic surfactant polyethylene glycol（PEG） were added to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine contributed to film predominant grain orientation along the（400） plane.The high transmittance（over 95%） was attributed to the preferred orientation and the grain size expansion of ITO films.SEM showed that the surface particle size and the morphology of ITO films were strongly dependent on the kind of surfactants used.Moving to the shortwave region, the absorption edge of the films exhibited the Burstein-Moss shift.
基金Project(51412020203JW1609) supported by the Advanced Research Foundation of Weapon Equipment, China
文摘BaTiO3 ferroelectric films were prepared on titanium substrate by microarc oxidation(MAO) technology. The effects of current density and electrolytic concentration on chemical composition, crystal phase, and surface morphologies of the films were characterized by XRD, SEM and EDS. The results show that the films made by MAO technology have a two layer structure with a good combinability between them and with the substrate. The inner layer is composed of Ti oxide without Ba, and the outer layer is mainly composed of BaTiO3 and Ti oxide. The compactability of the films decreases and the surface roughness of the films increases with the increase of current density and electrolytic concentration. Films with a high content of primitive tetragonal and end-centered orthorhombic BaTiO3 are obtained in 0.2 mol/LBa(OH)2 solution with current density of 5A/cm2 after 18 min.
基金Project(CityU1181/01E) supported by the Research Grants Council of the Hong Kong Special Administrative Region ,China Project(BK2003062) supported by the Natural Science Foundation of Jiangsu Province , China
文摘Chemically polished NiTi shape memory alloy（SMA） substrate was treated with a boiling aqueous solution containing hydrogen peroxide to form titania film in situ at low temperature. The surface characterizations of titania film on NiTi substrate were investigated by scanning electron microscopy, X-ray diffractometry and X-ray photoelectron spectroscopy. The results show that titania film is successfully fabricated in situ on NiTi SMA by this surface oxidation method. It is mainly composed of rutile and anatase, whose surface compositions and morphologies are sensitive to H2O2 content. In situ formation mechanism of titania film on NiTi substrate was discussed based on the experimental results.
基金Supported by National Natural Science Foundation of China(No.51005163 and No.51275351)Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
文摘The evolution of the surface oxide film along the depth direction of typical aluminum alloy under mediumtemperature brazing was investigated by means of X-ray photoelectron spectroscopy(XPS). For the alloy with Mg content below 2.0wt%, whether under cold rolling condition or during medium-temperature brazing process, the enrichment of Mg element on the surface was not detected and the oxide film was pure Al2O3. However, the oxide film grew obviously during medium-temperature brazing process, and the thickness was about 80 nm. For the alloy with Mg content above 2.0wt%, under cold rolling condition, the original surface oxide film was pure Al2O3. However, the Mg element was significantly enriched on the outermost surface during medium-temperature brazing process, and MgO-based oxide film mixed with small amount of MgAl2O4 was formed with a thickness of about 130 nm. The alloying elements of Mn and Si were not enriched on the surface neither under cold rolling condition nor during mediumtemperature brazing process for all the selected aluminum alloy, and the surface oxide film was similar to that of pure aluminum, which was almost entire Al2O3.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085)the Natural Science Foundation of Guangdong Province(Grant No.2016A030313474)the University Development Fund(Nanotechnology Research Institute,Grant No.00600009)of the University of Hong Kong,China
文摘Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.
基金supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602)Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500)+3 种基金the National Basic Research Program of China (Grant Nos. 2011CB201605 and 2011CB201606)the National Natural Science Foundation of China (Grant No. 60976051)International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580)Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295)
文摘Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.
基金supported by the National Natural Science Foundation of China (Nos. 60876055 and11074063)the Natural Science foundation of Hebei Province,China (Nos. E2008000620 and E2009000207)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20091301110002)the Key Basic Research Program of Hebei Provincial Applied Basic Research Plan (No. 10963525D)
文摘Zinc oxide （ZnO） thin films were deposited on sapphire （0001） substrates at room temperature by radiofrequency （RF） magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance （〉90%） in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00705,2011CBA00706,and 2011CBA00707)the National Natural Science Foundation of China(Grant No.60976051)the Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0295)
文摘An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.
文摘The vacuum-free vibration liquid phase(VLP) diffusion-bonding of SiC_p/ZL101A composites was investigated. The effects of vibration on the interface structure, the phase transformation and the tensile strength of bonded joints were examined. Experimental results show that the oxide film on the surface of the composites is a key factor affecting the tensile strength of boned joints. The distribution of the oxide layers at the interface changes from a continuous line to a discontinuous one during vibration. The tensile strength of the VLP diffusion-bonded joints increases with the vibration time, and is up to the maximum of 172MPa when the vibration time is 30s. The phase structure of the bond region changes from the Zn-Al-Cu hyper-eutectic (η+(β+η)+(β+η+ε)) phases to Al-rich Al-base solid solution (α-Al) with increasing the vibration time.
基金This work was supported by the Science and Technology Foundation of UESTC of Young Scholars(Grant No.L0801301JX04018).
文摘The Al-Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al-Ti composite oxide films formed at different anodizing temperatures from 25℃ to 85℃ have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al-Ti composite oxide film converts into three layers, I-V characteristics change evidently, and the specific capacitance achieves a peak value at about 75℃. The local breakdown in the composite oxide films formed at 50℃ occurs obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.
文摘Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.
