A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density

The further electrification of various fields in production and daily life makes it a topic worthy of exploration to improve the performance of capacitors for a long time,including thin-film capacitors.The discharge energy density of thin-film capacitors that serves as one of the important types directly depends on electric field strength and the dielectric constant of the insulation material.However,it has long been a great challenge to improve the breakdown strength and dielectric constant simultaneously.Considering that boron nitride nanosheets(BNNS)possess superior insulation and thermal conductivity owing to wide band gap and 2-dimensional structure,a bilayer polymer film is prepared via coating BNNS by solution casting on surface of polyethylene terephthalate(PET)films.By revealing the bandgap and insulating behavior with UV absorption spectrum,leakage current,and finite element calculation,it is manifested that nanocoating contributes to enhance the bandgap of polymer films,thereby suppressing the charge injection by redirecting their transport from electrodes.Worthy to note that an ultrahigh breakdown field strength(~736 MV m^(−1)),an excellent discharge energy density(~8.77 J cm^(−3))and a prominent charge-discharge efficiency(~96.51%)are achieved concurrently,which is ascribed to the contribution of BNNS ultrathin layer.In addition,the modified PET films also have superior comprehensive performance at high temperatures(~120°C).The materials and methods here selected are easily accessible and facile,which are suitable for large-scale roll-to-roll process production,and are of certain significance to explore the methods about film modification suitable for commercial promotion.

Study on the Dielectric Properties of Chemical Vapor Deposited Diamond Film

Aim To study the dielectric properties of diamond film. Methods Dielectric properties (the frequency dependenCe of conductance, permittivity, and loss factor) of diamond film preped by DC are plasma jet chemical vapor deposition (CVD) were studied. Resuls Dielectric properties of CVD diamond fAn depend mainly on its polycrystalline nature, and the presence of non-diamond disordered graphitic regions and impurities between diamond grains of the film. Annealing at 500℃ leads to the removal of greater part of disordered graphitic regions, but am not remove all disordered graphitic regions and impurities. Conclusion Much work nab to be done tO prepare or post-treat diamond films before using CVD diamond as a substrate for electronic devices.

Construction of all-organic low dielectric polyimide hybrids via synergistic effect between covalent organic framework and cross-linking structure

Polyimide(PI)is a promising electronic packaging material,but it remains challenging to obtain an all-organic PI hybrid film with decreased dielectric constant and loss without modifying the monomer.Herein,a series of allorganic PI hybrid films were successfully prepared by introducing the covalent organic framework(COF),which could induce the formation of the cross-linking structure in the PI matrix.Due to the synergistic effects of the COF fillers and the cross-linking structure,the PI/COF hybrid film containing 2 wt%COF exhibited the lowest dielectric constant of 2.72 and the lowest dielectric loss(tanδ)of 0.0077 at 1 MHz.It is attributed to the intrinsic low dielectric constant of COF and a large number of mesopores within the PI.Besides,the cross-linking network of PI prevents the molecular chains from stacking and improves the fraction of free volume(FFV).The molecular dynamics simulation results are well consistent with the dielectric properties data.Furthermore,the PI/COF hybrid film with 5 wt%COF showed a significant enhancement in breakdown strength,which increased to 412.8 kV/mm as compared with pure PI.In addition,the PI/COF hybrid film achieve to reduce the dielectric constant and thermal expansion coefficient(CTE).It also exhibited excellent thermal,hydrophobicity,and mechanical performance.The all-organic PI/COF hybrid films have great commercial potential as next-generation electronic packaging materials.

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate（BTO） thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition（PAD） technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

Analysis of the spatial filter of a dielectric multilayer film reflective cutoff filter-combination device

The experiment setup of a reflecting combination device, which has more advantages than a transmitting combination device, is designed in this study. To achieve angular spectrum selectivity, only one type of reflective component is needed,so difficulties of design and preparation are reduced. A dielectric multilayer film is applied to the reflective component, and the long wave-pass coating stacks of the structure are designed. To achieve high stopband transmittance and reduce electric field intensity at a wavelength of 1053 nm, an objective function is proposed for designing an optimized coating. The final optimized coating has good spectral characteristics and a high laser-induced damage threshold. A dielectric multilayer film with high reflectance plays an important role in preparing and applying a dielectric multilayer film reflecting cutoff filter-combination device.

Deposition of Thin Titania Films by Dielectric Barrier Discharge at Atmospheric Pressure

A homogeneous atmospheric pressure dielectric barrier discharge is studied. It is in argon with small admixtures of titanium tetrachloride vapour and oxygen for the deposition of thin titania films on glass substrates. A special electrode configuration was applied in order to deposit the titania film uniformly. The sustaining voltage （6 kV to 12 kV）, current density （about 3 mA/cm^2） and total optical emission spectroscopy were monitored to characterize the discharge in the gap of 2 mm. Typical deposition rates ranged from approximately 30 nm/min to 120 nm/min. The film morphology was investigated by using scanning electron microscopy （SEM） and the composition was determined with an energy dispersive x-ray spectroscopy （EDS） analysis tool attached to the SEM. The crystal structure and phase composition of the films were studied by x-ray diffraction （XRD）. Several parameters such as the discharge power, the ratio of carrier gas to the precursor gas, the deposition time on the crystallization behavior, the deposition rate and the surface morphology of the titania film were extensively studied.

Measurement of surface charges on the dielectric film based on field mills under the HVDC corona wire

The ion flow field on the ground is one of the significant parameters used to evaluate the electromagnetic environment of high voltage direct current（HVDC） power lines.HVDC lines may cross the greenhouses due to the restricted transmission corridors.Under the condition of ion flow field,the dielectric films on the greenhouses will be charged,and the electric fields in the greenhouses may exceed the limit value.Field mills are widely used to measure the groundlevel direct current electric fields under the HVDC power lines.In this paper,the charge inversion method is applied to calculate the surface charges on the dielectric film according to the measured ground-level electric fields.The advantages of hiding the field mill probes in the ground are studied.The charge inversion algorithm is optimized in order to decrease the impact of measurement errors.Based on the experimental results,the surface charge distribution on a piece of quadrate dielectric film under a HVDC corona wire is studied.The enhanced effect of dielectric film on ground-level electric field is obviously weakened with the increase of film height.Compared with the total electric field strengths,the normal components of film-free electric fields at the corresponding film-placed positions have a higher effect on surface charge accumulation.

Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge

Plasma polymerized fluorocarbon （FC） films have been deposited on silicon substrates from dielectric barrier discharge （DBD） plasma of C4Fs at room temperature under a pressure of 25～125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.

Phase control of magnetron sputtering deposited Gd_2O_3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density （JL） of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.

Wet flashover voltage improvement of the ceramics with dielectric barrier discharge

Surface modification techniques with plasma are widely investigated to improve the surface insulation capability of polymers under dry conditions,while the relationship between treatment method,surface physical and chemical properties,and wet flashover voltage is still unclear for inorganic ceramics.In this work,the surface insulation properties of ceramics under wet conditions are improved using nanosecond-pulsed dielectric barrier discharge with polydimethylsiloxane(PDMS)as the precursor.The relationships between PDMS concentration and the water contact angle,dry and wet flashover voltages are obtained to acquire the optimal concentration.The surface charge dissipation test and surface physio-chemical property measurement with SEM,AFM,XPS are carried out to further explore the mechanism of surface insulation enhancement.The results show that film deposition with micron thickness and superhydrophobicity occurs at the PDMS concentration of 1.5%.The dry flashover voltage is increased by 14.6%due to the induction of deep traps,while the wet flashover voltage is increased by 66.7%.The gap between dry-wet flashover voltage is decreased by 62.3%compared with the untreated one due to the self-cleaning effect.

High Refractive Index Ti3O5 Films for Dielectric Metasurfaces

Ti33O55 films are deposited with the help of an electron beam evaporator for their applications in metasurfaces. The film of subwavelength （632nm） thickness is deposited on a silicon substrate and annealed at 400℃. The ellipsometry result shows a high refractive index above 2.5 with the minimum absorption coefficient in the visible region, which is necessary for high efficiency of transparent metasurfaces. Atomic force microscopy analysis is employed to measure the roughness of the as-deposited films. It is seen from micrographs that the deposited films are very smooth with the minimum roughness to prevent scattering and absorption losses for metasurface devices. The absence of grains and cracks can be seen by scanning electron microscope analysis, which is favorable for electron beam lithography. Fourier transform infrared spectroscopy reveals the transmission and reflection obtained from the film deposited on glass substrates. The as-deposited film shows high transmission above 60%, which is in good agreement with metasurfaces.

High-Pressure Plasma Deposition of a-C:H Films by Dielectric-Barrier Discharge

The fabrication of a-C:H films from methane has been performed using dielectric-barrier discharges at atmospheric pressure. The effect of combined-feed gas, such as carbon dioxide, carbon monoxide or acetylene on the formation of a-C:H films has been investigated. It has been demonstrated that the addition of carbon monoxide or acetylene into methane leads to a remarkable improvement in the fabrication of a-C:H films. The characterization of carbon film obtained has been conducted using FT-IR, Raman and SEM.

Helium Plasma Damage of Low-k Carbon Doped Silica Film:the Effect of Si Dangling Bonds on the Dielectric Constant

The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS, FTIR and optical emission spec- troscopy analysis. XPS data indicate that helium ions have broken Si-C bonds, leading to Si-C scission with C（1s） lost seriously. The Si（2p）, O（ls）, peak obviously shifted to higher binding en- ergies, indicating an increasingly oxidized Si（2p）. FTIR data also show that the silanol formation increased with longer exposure time up to a week. Contrarily, the CHa stretch, Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma. The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film. So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals, and the latter easily reacts with O_2 from the atmosphere to generate CO_2 and H_2O. The bonds change is due to the Si dangling bonds combining with H_2O, thereby, increasing the dielectric constant k value.

Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl_4/O_2/N_2 Gas Mixtures

Low-pressure dielectric barrier discharge（DBD） TiCl4/O2and N2 plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A homemade large area low pressure DBD reactor was applied, characterized by the simplicity of the experimental set-up and a low consumption of feed gas and electric power, as well as being easy to operate. Atomic force microscopy, scanning electron microscopy, energy dispersive spectroscopy,and contact angle measurements have been used to characterize the deposited films. Experimental results show all deposited films are uniform and hydrophilic with a contact angle of about 15 o.Compared to titanium oxide films deposited in TiCl4/O2gas mixtures, those in TiCl4/O2/N2gas mixtures are much more stable. The contact angle of titanium oxide films in TiCl4/O2/N2gas mixtures with the addition of 50% N2 and 20% TiCl4 is still smaller than 20 o, while that of undoped titanium oxide films is larger than 64 owhen they are measured after one week. The low-pressure TiCl4/O2plasmas consist of pulsed glow-like discharges with peak widths of several microseconds, which leads to the uniform deposition of titanium oxide films. Increasing a film thickness over several hundreds of nm leads to the film’s fragmentation due to the over-high film stress. Optical emission spectra（OES） of TiCl4/O2DBD plasmas at various power supply driving frequencies are presented.

Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

Here I will review recent progress on the study of dielectric SrTiO3 （STO） thin films. In our work, laser molecular beam epitaxy has been used to prepare multilayer heterostructures consisting of dielectric STO and high temperature superconducting YBa2Cu3Oy （YBCO） thin films for tunable applications. Since the tunability of the dielectric constant and dielectric loss of STO are the key parameters determining the performance of tunable devices and hence the feasibility of this technology, the correlations between the deposition parameters of STO thin films, their structural characteristics, and dielectric properties were studied. An enhanced tunability of 74.7%, comparable to that of STO single-crystal, was observed in our grown STO thin films suitable for tunable YBCO applications. On the other hand, we have grown epitaxial STO （110） films on Si without any buffer layer. The nature of epitaxial growth and interfacial structures of the grown films were examined by various techniques, such as Laue diffraction, high-resolution transmission electron microscopy （HRTEM） and x-ray photoelectron spectroscopy. The in-plane alignments for the STO （110） films grown directly on Si （100） was found as STO//Si and STO//Si . HRTEM study has showed a crystalline transition across the STO/Si interface, indicating it is free from any amorphous oxide layer. We provide clear evidence that the interface mainly consists of Sr silicate phase. The results suggest that such Sr silicate interfacial layer exhibits favourable structural and chemical properties that are particularly useful for epitaxial STO （110） growth on Si. Such STO thin films will be useful for practical applications.

Strain tunability of dielectric and ferroelectric properties in epitaxial lead titanate thin films

Many distinguished properties of epitaxial ferroelectric thin films can be tunable through the misfit strain.The strain tunability of ferroelectric and dielectric properties in epitaxial lead titanate ultrathin films is numerically investigated by using a phase field model,in which the surface effect of polarization is taken into account.The response of polarization to the applied electric field in the thickness direction is examined with different misfit strains at room temperature.It is found that a compressive misfit strain increases the coercive field and the remanent polarization while a tensile misfit strain decreases both of them.The nonlinear dielectric constants of the thin films with tensile misfit strains are much larger than those of the thin films without misfit strains,which are attributed to the existence of the a/c/a/c multiple domains in the thin films under tensile misfit strains.

Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol（4-FTP） self-assembled monolayers（SAM） to chemically treat the silver source–drain（S/D） contacts while the silicon oxide（SiO2） dielectric interface is further primed by either hexamethyldisilazane（HMDS） or octyltrichlorosilane（OTS-C8）. Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm^2·V^-1·s^-1 to 0.91 cm^2·V^-1·s^-1.

Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping

Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sro.4TiO3 thin films has a strong influence on the material＇s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Bao.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.

Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.