SHOCK SLIP-RELATIONS FOR THERMAL AND CHEMICAL NONEQUILIBRIUM FLOWS

This paper appears to be the first where the multi-temperature shock slip-relations for the thermal and chemical nonequilibrium flows are derived. The derivation is based on analysis of the influences of thermal nonequilibrium and viscous effects on the mass, momentum and energy flux balance relations at the shock wave. When the relaxation times for all internal energy modes tend to sere, the multi-temperature shock slip-relations are converted into single-temperature ones for thermal equilibrium hows. The present results can be applied to flows over vehicles of different geometries with or without angles of attack. In addition, the present single-temperature shock slip-relations are compared with those in the literature, and Some defects and limitations in the latter are clarified.

Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases(3DEGs)at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional(2D)-three-dimensional(3D)channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure(DH:Si/C).Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure(SH:C).There are fast,medium,and slow trap states in DH:Si/C,while only medium trap states exist in SH:C.The time constant/trap density for medium trap state in SH:C heterostructure are(11μs-17.7μs)/(1.1×10^13 cm^-2·eV^-1-3.9×10^13 cm^-2·eV^-1)and(8.7μs-14.1μs)/(0.7×10^13 cm^-2·eV^-1-1.9×10^13 cm^-2·eV^-1)at 300 K and 500 K respectively.The time constant/trap density for fast,medium,and slow trap states in DH:Si/C heterostructure are(4.2μs-7.7μs)/(1.5×10^13 cm^-2·eV^-1-3.2×10^13 cm^-2·eV^-1),(6.8μs-11.8μs)/(0.8×10^13 cm^-2·eV^-1-2.8×10^13 cm^-2·eV^-1),(30.1μs-151μs)/(7.5×10^12 cm^-2·eV^-1-7.8×10^12 cm^-2·eV^-1)at 300 K and(3.5μs-6.5μs)/(0.9×10^13 cm^-2·eV^-1-1.8×10^13 cm^-2·eV^-1),(4.9μs-9.4μs)/(0.6×10^13 cm^-2·eV^-1-1.7×10^13 cm^-2·eV^-1),(20.6μs-61.9μs)/(3.2×10^12 cm^-2·eV^-1-3.5×10^12 cm^-2·eV^-1)at 500 K,respectively.The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.

Data Temperature Informed Streaming for Optimising Large-Scale Multi-Tiered Storage

Data temperature is a response to the ever-growing amount of data.These data have to be stored,but they have been observed that only a small portion of the data are accessed more frequently at any one time.This leads to the concept of hot and cold data.Cold data can be migrated away from high-performance nodes to free up performance for higher priority data.Existing studies classify hot and cold data primarily on the basis of data age and usage frequency.We present this as a limitation in the current implementation of data temperature.This is due to the fact that age automatically assumes that all new data have priority and that usage is purely reactive.We propose new variables and conditions that influence smarter decision-making on what are hot or cold data and allow greater user control over data location and their movement.We identify new metadata variables and user-defined variables to extend the current data temperature value.We further establish rules and conditions for limiting unnecessary movement of the data,which helps to prevent wasted input output(I/O)costs.We also propose a hybrid algorithm that combines existing variables and new variables and conditions into a single data temperature.The proposed system provides higher accuracy,increases performance,and gives greater user control for optimal positioning of data within multi-tiered storage solutions.