High-Efficiency Green Phosphorescent Organic Light-Emitting Diode Based on Simplified Device Structures

A high-efficiency green phosphorescent organic light emitting diode with a simplified structure is achieved that is free of a hole transport layer. The design of this kind of device structure not only saves the consumption of organic materials but also greatly reduces the structural heterogeneities and effectively facilitates the charge injection into the emissive layer. The resulting green phosphorescent organic light-emitting diodes （PHOLEDs） exhibit higher electroluminescent efficiency. The maximum external quantum efficiency and current efficiency reach 23.7% and 88 cd/A, respectively. Moreover the device demonstrates satisfactory stability, keeping 23.7% and 88cd/A, 22% and 82cd/A, respectively, at a luminance of 100 and 1000cd/m2. The working mechanism for achieving high efficiency based on such a simple device structure is discussed correspondingly. The improved charge carrier injection and transport balance are proved to prominently contribute to achieve the high efficiency and great stability at high luminance in the green PHOLEDs.

The Effect of Recombination Zone Positon on the Color Temperature Performance in the Color-Tunable White Organic Light-Emitting Diode

Using a color-tunable organic light-emitting diode (CT-OLED) can accord with the circadian cycle of humans and realize healthy lighting. The variation range of the correlated color temperature (CCT) is an important parameter to measure the performance of CT-OLEDs. In this paper, the effect of changing the utilization of phosphorescent materials and the position of the recombination zone (RZ) in the device are investigated by changing the thickness of the emissive layer (EML) and the doping ratio of the host and guest materials. The results show that reducing the red phosphorescent material and improving the blue phosphorescent material can affect the change direction of CCT, but it is not enough to expand the span of CCT (ΔCCT). It is more conducive to improving ΔCCT by more reasonable regulation of the position of the main RZ in EML and the energy transfer from the blue sub-EML to the red sub-EML. Device D obtains the best electro-optic and spectral characteristics, in which the maximum ΔCCT is 5746 K (2661 - 8407 K) as the voltage changes from 3.75 V to 9.75 V, the maximum current efficiency and luminance reach 18.34 cd·A-1 and 12,100 cd·m-2, respectively.

Inorganic and Organic Solution-Processed Thin Film Devices

Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

A New Conducting Polymer Electrode for Organic Electroluminescence Devices

Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.

Light-emitting diodes based on colloidal silicon quantum dots

Colloidal silicon quantum dots （Si QDs） hold great promise for the development of printed Si electron- ics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for op- toelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes （LEDs） play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD sur- face and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity

The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.

Degradation Mechanisms in Blue Organic Light-Emitting Diodes

An organic light-emitting diode(OLED)is required to exhibit long-time operation without degradation as an inorganic LED.Sufficiently long operation time has been demonstrated for green-and red-emitting OLEDs.However,a blue device that is important for full-color display and lighting exhibits a much shorter operational lifetime than the other color devices.The short lifetime is mainly attributed to the molecular dissociation and the defects and radical species formation through various unimolecular and bimolecular processes,including direct photolysis,exciton–exciton interaction,and exciton–polaron interaction,and so on.

Multiple-quantum-well perovskite for hole-transport-layer-free light-emitting diodes

We demonstrate hole-transport-layer-free light-emitting diodes(LEDs) based on solution-processed multiple-quantum-well(MQW) perovskite. The MQW perovskite can self-assemble to a unique structure of vertically graded distribution with two-dimensional layered perovskite covered by three-dimensionallike perovskite at top, which can naturally form a barrier of electron transporting to the anode interface,thereby enhancing the charge capture efficiency. This leads to hole-transport-layer-free MQW perovskite LEDs reaching an external quantum efficiency(EQE) of 9.0% with emission peak at 528 nm, which is over6 times of LEDs based on three-dimensional perovskite with the same device structure, representing the record EQE of hole-transport-layer-free perovskite LED.

Appending triphenyltriazine to 1,10-phenanthroline: a robust electron-transport material for stable organic light-emitting diodes

There has been an increasing demand for high-performance and cost-effective organic electron-transport materials for organic light-emitting diodes （OLEDs）. In this contribution, we present a simple compound 3-（3-（4,6-diphenyl-l,3,5-triazin-2-yl）phenyl）-1,10-phenanthroline through the facile Pd-catalyzed coupling of a triphenyltriazine boronic ester with 3-hromo-1,10-phenanthroline. It shows a high Tg of 112℃. The ultraviolet photoelectron spectroscopy measurements reveal a deep HOMO level of -6.5 eV. The LUMO level is derived as -3.0 eV, based on the optical bandgap. The low-temperature solid-state phosphorescent spectrum gives a triplet energy of -2.36eV. n-Doping with 8-hydroxyquinolatolithium （Liq, 1：1） leads to considerably improved electron mobility of 5.2 × 10 -6 -5.8 × 10 -5 cm2 v-1 S-1 at E=（2-5） × 10 5Vcm -1, in contrast with the triarylphosphine oxide- phenantroline molecular conjugate we reported previously. It has been shown that through optimizing the device structure and hence suppressing polaron-exciton annihilation, introducing this single Liq-doped electron-transport layer could offer high-efficiency and stable phosphorescent OLEDs.

Structural Controls of Tetraphenylbenzene-based AIEgens for Non-doped Deep Blue Organic Light-emitting Diodes

Aggregation-induced emission(AIE)has emerged as a new concept,giving highly efficient solid-state photoluminescence.Particularly,AIE luminogens(AIEgens)with deep blue emission(400–450 nm)have displayed salient advantages for non-doped organic light-emitting diodes(OLEDs).However,deep blue emitters with Commission Internationale de L’Eclairage(CIE)coordinates less than 0.08 are still rare.In this review,we outline the latest achievements in the molecular guidelines based on the AIE core of tetraphenylbenzene(TPB)for developing efficient deep blue AIEgens.We provide insights into the construction of deep blue emitters with high horizontal orientation by regulating the length of the linear molecule.We also discuss the luminescence mechanisms of these AIEgens-based OLEDs by using the magnetic field effects measurements.Finally,a summary of the challenges and perspectives of deep blue AIEgens for non-doped OLEDs is also presented.

Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes

The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved recently.Therein,the coexistence of polydisperse perovskite domains has been one worthy subject of study.The crystallization of perovskite is affected by the buried interface character with the bottom contact layer;and the trap states also inherently exist at the buried interface of the perovskite film,which induce the nonradiative recombination and impede the PeLED performance.In this work,we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance PeLEDs.We show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite phase.In this system,the carrier transferring process deriving from the polydisperse phases is reduced.In addition,the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of perovskites.Accordingly,our PeLEDs show a champion external quantum efficiency(EQE)of 25.5%for 4 mm2 device,and 22.9%for 100 mm^(2)device.

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

In the past few years, two-dimensional （2D） transition metal dichalcogenide （TMDC） materials have attracted increasing attention of the research community, owing to their unique electronic and optical properties, ranging from the valley-spin coupling to the indirect-to-direct bandgap transition when scaling the materials from multi-layer to monolayer. These properties are appealing for the development of novel electronic and optoelectronic devices with important applications in the broad fields of communication, computation, and healthcare. One of the key features of the TMDC family is the indirect-to-direct bandgap transition that occurs when the material thickness decreases from multilayer to monolayer, which is favorable for many photonic applications. TMDCs have also demonstrated unprecedented flexibility and versatility for constructing a wide range of heterostructures with atomic-level control over their layer thickness that is also free of lattice mismatch issues. As a result, layered TMDCs in combination with other 2D materials have the potential for realizing novel high-performance optoelectronic devices over a broad operating spectral range. In this article, we review the recent progress in the synthesis of 2D TMDCs and optoelectronic devices research. We also discuss the challenges facing the scalable applications of the family of 2D materials and provide our perspective on the opportunities offered by these materials for future generations of nanophotonics technology.

Recent advances in soft electronic materials for intrinsically stretchable optoelectronic systems

In recent years,significant progress has been achieved in the design and fabrication of stretchable optoelectronic devices.In general,stretchability has been achieved through geometrical modifications of device components,such as with serpentine interconnects or buckled substrates.However,the local stiffness of individual pixels and the limited pixel density of the array have impeded further advancements in stretchable optoelectronics.Therefore,intrinsically stretch-able optoelectronics have been proposed as an alternative approach.Herein,we review the recent advances in soft elec-tronic materials for application in intrinsically stretchable optoelectronic devices.First,we introduce various intrinsically stretchable electronic materials,comprised of electronic fillers,elastomers,and surfactants,and exemplify different in-trinsically stretchable conducting and semiconducting composites.We also describe the processing methods used to fabricate the electrodes,interconnections,charge transport layers,and optically active layers used in intrinsically stretch-able optoelectronic devices.Subsequently,we review representative examples of intrinsically stretchable optoelectronic devices,including light-emitting capacitors,light-emitting diodes,photodetectors,and photovoltaics.Finally,we briefly discuss intrinsically stretchable integrated optoelectronic systems.

Thin-film organic semiconductor devices:from flexibility to ultraflexibility

Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight,flexibility,reproducible semiconductor resources,easy tuning of functional properties via molecular tailoring,and low cost large-area solution-procession.Among them,ultraflexible electronics,usually with minimum bending radius of less than 1 mm,are essential for the development of epidermal and bio-implanted electronics,wearable electronics,collapsible and portable electronics,three dimensional(3D) surface compilable electronics,and bionics.This review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics,and design of ultraflexible devices,then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices,focusing on organic field effect transistors,organic light-emitting diodes,organic solar cells and organic memory devices.

多芯片LED器件热学特性分析

由于芯片之间存在的热耦合效应,多芯片LED器件内部存在复杂热学规律。本文通过多芯片LED热学模型描述多芯片LED器件系统内部热阻支路路径,进而通过有限体积数值计算多芯片LED器件结温。通过本文试验验证,单颗芯片、2颗芯片、3颗芯片以及4颗芯片在负载不同电功率(0.3~1.2 W)情况下,结温的测试值和计算值的最小误差值为0.8%,最大误差值为6.8%,平均误差值为3.4%,计算结果与测试结果基本保持一致,因此有利论证了多芯片LED热学模型可为评价多芯片LED器件热学性能提供重要的参考作用,有助于更全面分析多芯片LED热阻内部芯片之间的热耦合效应。该实验结果为准确预测多芯片LED器件内部结温提供了重要理论依据。

MoO_(x) and V_(2)O_(x) as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells(OSCs)and organic light-emitting diodes(OLEDs),it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers(ETLs and HTLs)of the organic devices in all device architectures(i.e.,normal and inverted architectures).We address this issue by proposing and demonstrating Cs-intercalated metal oxides(with various Cs mole ratios)as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures.Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide(MoOx)and vanadium oxide(V_(2)O_(x)).Moreover,the Cs-intercalated metaloxide-based ETL and HTL can be easily formed under the conditions of a room temperature,water-free and solution-based process.These conditions favor practical applications of OSCs and OLEDs.Notably,with the analyses of the Kelvin Probe System,our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals(Mo or V)/Cs from 1:0 to 1:0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL.Consequently,our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.

Blue emitting exciplex for yellow and white organic light‑emitting diodes

White organic light-emitting diodes(WOLEDs)have several desirable features,but their commercialization is hindered by the poor stability of blue light emitters and high production costs due to complicated device structures.Herein,we investigate a standard blue emitting hole transporting material(HTM)N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)and its exciplex emission upon combining with a suitable electron transporting material(ETM),3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole(TAZ).Blue and yellow OLEDs with simple device structures are developed by using a blend layer,NPB:TAZ,as a blue emitter as well as a host for yellow phosphorescent dopant iridium(III)bis(4-phenylthieno[3,2-c]pyridinato-N,C2')acetylacetonate(PO-01).Strategic device design then exploits the ambipolar charge transport properties of tetracene as a spacer layer to connect these blue and yellow emitting units.The tetracene-linked device demonstrates more promising results compared to those using a conventional charge generation layer(CGL).Judicious choice of the spacer prevents exciton difusion from the blue emitter unit,yet facilitates charge carrier transport to the yellow emitter unit to enable additional exciplex formation.This complementary behavior of the spacer improves the blue emission properties concomitantly yielding reasonable yellow emission.The overall white light emission properties are enhanced,achieving CIE coordinates(0.36,0.39)and color temperature(4643 K)similar to daylight.Employing intermolecular exciplex emission in OLEDs simplifes the device architecture via its dual functionality as a host and as an emitter.